Memory element with a hardmask stack having different stress levels
Embodiments of the invention are directed to an integrated circuit (IC) structure that includes a memory element a non-sacrificial hardmask stack over the memory element. The non-sacrificial hardmask stack includes a first hardmask region and a second hardmask region. A compressive stress level of the first hardmask region is greater than a compressive stress level of the second hardmask region.
1 . An integrated circuit (IC) structure comprising:
a memory element; and
a non-sacrificial hardmask stack over the memory element;
wherein the non-sacrificial hardmask stack exhibits an overall compressive stress;
wherein the non-sacrificial hardmask stack comprises a first hardmask region and a second hardmask region;
wherein the first hardmask region exhibits a first compressive stress, and the second hardmask region exhibits a second compressive stress; and
wherein a level of the overall compressive stress is based at least in part on a level of the first compressive stress being greater than a level of the second compressive stress.
2 . The IC structure of claim 1 further comprising a protective oxide region on a sidewall of the memory element.
3 . The IC structure of claim 1 , wherein the level of the overall compressive stress is less than the level of the first compressive stress.
4 . The IC structure of claim 3 , wherein the first hardmask region comprises a nitride of a metal.
5 . The IC structure of claim 4 , wherein the second hardmask region comprises the metal.
6 . The IC structure of claim 1 , wherein the non-sacrificial hardmask stack further comprises a third hardmask region that exhibits a third compressive stress.
7 . The IC structure of claim 6 , wherein a level of the third compressive stress is greater than the level of the second compressive stress.
8 . The IC structure of claim 7 , wherein thicknesses of the first hardmask region, the second hardmask region, and the third hardmask region are such that:
a desired percentage of a total volume of the non-sacrificial hardmask stack is provided by the second hardmask region;
a desired reduction in the level of the first compressive stress and the level of the third compressive stress is achieved; and
a desired level of the overall compressive stress is achieved.
9 . The IC structure of claim 8 , wherein:
the level of the first compressive stress is substantially the same as the level of the third compressive stress; and
the second hardmask region is between the first hardmask region and the third hardmask region.
10 . The IC structure of claim 9 , wherein the memory element comprises a magnetic tunnel junction (MTJ) stack.
11 . An integrated circuit (IC) structure comprising:
a memory element; and
a non-sacrificial hardmask stack over the memory element;
wherein the non-sacrificial hardmask stack exhibits an overall compressive stress;
wherein the non-sacrificial hardmask stack comprises a plurality of first hardmask regions and a plurality of second hardmask regions;
wherein each of the plurality of first hardmask regions is adjacent to one of the plurality of second hardmask regions;
wherein each of the plurality of first hardmask regions exhibits a first compressive stress, and each of the plurality of second hardmask regions exhibits a second compressive stress; and
wherein a level of the overall compressive stress is based at least in part on a level of the first compressive stress being greater than a level of the second compressive stress.
12 . The IC structure of claim 11 further comprising:
a protective oxide region on a sidewall of the memory element; and
an encapsulation layer on the protective oxide;
wherein the protective oxide region and the encapsulation layer are different elements of the IC structure.
13 . The IC structure of claim 11 , wherein thicknesses of the plurality of first hardmask regions and the plurality of second hardmask regions are such that:
a desired percentage of a total volume of the non-sacrificial hardmask stack is provided by the plurality of second hardmask regions;
a desired reduction in the level of the first compressive stress by the level of the second compressive stress is achieved; and
a desired value of the level of the overall compressive stress is achieved; and
the level of the overall compressive stress is less than the level of the first compressive stress.
14 . The IC structure of claim 13 , wherein:
each of the plurality of first hardmask regions is formed from a nitride of a metal; and
each of the plurality of second hardmask regions is formed from the metal.
15 . The IC structure of claim 14 , wherein the memory element comprises a magnetic tunnel junction (MTJ) stack.
16 . A method of forming a portion of an integrated circuit (IC) structure, the method comprising:
forming a memory element; and
forming a non-sacrificial hardmask stack over the memory element;
wherein the non-sacrificial hardmask stack exhibits an overall compressive stress;
wherein the non-sacrificial hardmask stack comprises a first hardmask region and a second hardmask region;
wherein the first hardmask region exhibits a first compressive stress, and the second hardmask region exhibits a second compressive stress; and
wherein a level of the overall compressive stress is based at least in part on a level of the first compressive stress being greater than a level of the second compressive stress.
17 . The method of claim 16 further comprising forming a protective oxide region on a sidewall of the memory element.
18 . The method of claim 16 , wherein thicknesses of the first hardmask region and the second hardmask region are such that:
a desired percentage of a total volume of the non-sacrificial hardmask stack is provided by the second hardmask region;
a desired reduction in the level of the first compressive stress is achieved due to the presence of the second hardmask region;
a desired value of the level of the overall compressive stress is achieved; and
the level of the overall compressive stress is less than the level of the first compressive stress.
19 . The method of claim 16 , wherein:
the first hardmask region comprises a nitride of a metal; and
the second hardmask region comprises the metal.
20 . The method of claim 19 , wherein forming the non-sacrificial hardmask stack includes applying a deposition process comprising:
placing the IC structure in a chamber;
using a first reactive gas to generate a first instance of the metal and deposit the first instance of the metal on the IC structure;
switching from the first reactive gas to a second reactive gas; and
using the second reactive gas to generate a second instance of the metal, react the second instance of the metal with the nitride to generate the nitride of the metal, and deposit the nitride of the metal on the first instance of the metal that is on the IC structure.