MTJ device performance by adding stress modulation layer to MTJ device structure
A method for fabricating an improved magnetic tunneling junction (MTJ) structure is described. A bottom electrode is provided on a substrate. A MTJ stack is deposited on the bottom electrode. A top electrode is deposited on the MTJ stack. A first stress modulating layer is deposited between the bottom electrode and the MTJ stack, or a second stress modulating layer is deposited between the MTJ stack and the top electrode, or both a first stress modulating layer is deposited between the bottom electrode and the MTJ stack and a second stress modulating layer is deposited between the MTJ stack and the top electrode. The top electrode and MTJ stack are patterned and etched to form a MTJ device. The stress modulating layers reduce crystal growth defects and interfacial defects during annealing and improve the interface lattice epitaxy. This will improve device performance.
1. A magnetic tunneling junction (MTJ) structure, comprising:
a first stress modulating layer on a first electrode layer, wherein a material of the first stress modulating layer is different from a material of the first electrode layer;
a magnetic tunneling junction (MTJ) material stack on the first stress modulating layer;
a second stress modulating layer on the MTJ material stack; and
a second electrode layer on the second stress modulating layer, wherein a material of the second stress modulating layer is different from a material of the second electrode layer.
2. The MTJ structure of claim 1 , wherein each of the first stress modulating layer and the second stress modulating layer includes a material selected from the group consisting of Mg, Al, Hf, Zr, and a combination thereof.
3. The MTJ structure of claim 1 , wherein a thickness of each of the first stress modulating layer and the second stress modulating layer is in a range from about 1 nanometer to about 100 nanometers.
4. The MTJ structure of claim 3 , wherein the thickness of each of the first stress modulating layer and the second stress modulating layer is about 10 nanometers.
5. The MTJ structure of claim 1 , wherein an elastic modulus of each of the first stress modulating layer and the second stress modulating layer is in a range from about 20 Gigapascals (GPa) to about 400 GPa.
6. The MTJ structure of claim 5 , wherein the elastic modulus of each of the first stress modulating layer and the second stress modulating layer is about 50 GPa.
7. The MTJ structure of claim 1 , wherein the MTJ material stack includes:
a seed layer on the first stress modulating layer, the seed layer physically contacting the first stress modulating layer;
a pinned layer on the seed layer;
a barrier layer on the pinned layer;
a free layer on the barrier layer; and
a capping layer on the free layer.
8. The MTJ structure of claim 7 , wherein the second stress modulating layer physically contacts the capping layer of the MTJ material stack.
9. The MTJ structure of claim 1 , wherein sidewalls of the first stress modulating layer, the MTJ material stack, the second stress modulating layer, and the second electrode layer are substantially aligned.
10. The MTJ structure of claim 9 , wherein a width of the first electrode layer is greater than a width of each of the first stress modulating layer, the MTJ material stack, the second stress modulating layer, and the second electrode layer.
11. A magnetic tunneling junction (MTJ) structure, comprising:
a bottom electrode disposed over a substrate, the bottom electrode having a first width;
a first stress modulating layer disposed over the bottom electrode, wherein a material of the first stress modulating layer is different from a material of the bottom electrode;
a magnetic tunneling junction (MTJ) material stack disposed over the first stress modulating layer, the MTJ material stack including:
a seed layer on the first stress modulating layer;
a pinned layer on the seed layer;
a barrier layer on the pinned layer;
a free layer on the barrier layer; and
a capping layer on the free layer;
a second stress modulating layer disposed over the capping layer of the MTJ material stack; and
a top electrode disposed over the second stress modulating layer, wherein a material of the second stress modulating layer is different from a material of the top electrode, and wherein each of the first stress modulating layer, the MTJ material stack, the second stress modulating layer, and the top electrode has a second width different from the first width.
12. The MTJ structure of claim 11 , further comprising a dielectric layer laterally surrounding at least the bottom electrode.
13. The MTJ structure of claim 11 , wherein the second width is less than the first width.
14. The MTJ structure of claim 11 , wherein each of the first stress modulating layer and the second stress modulating layer includes a material selected from the group consisting of Mg, Al, Hf, Zr, and a combination thereof.
15. The MTJ structure of claim 11 , wherein a thickness of each of the first stress modulating layer and the second stress modulating layer is in a range from about 1 nanometer to about 100 nanometers.
16. The MTJ structure of claim 11 , wherein an elastic modulus of each of the first stress modulating layer and the second stress modulating layer is in a range from about 20 Gigapascals (GPa) to about 400 GPa.
17. A magnetic recording device, comprising:
a first shielding element;
a second shielding element separated from the first shielding element by a gap; and
a read head disposed in the gap between the first shielding element and the second shielding element, the read head including:
a bottom electrode;
a first stress modulating layer disposed over the bottom electrode;
a magnetic tunneling junction (MTJ) material stack disposed over the first stress modulating layer;
a second stress modulating layer disposed over the MTJ material stack; and
a top electrode disposed over the second stress modulating layer.
18. The magnetic recording device of claim 17 , wherein an elastic modulus of each of the first stress modulating layer and the second stress modulating layer is in a range from about 20 Gigapascals (GPa) to about 400 GPa.
19. The magnetic recording device of claim 17 , wherein each of the first stress modulating layer and the second stress modulating layer includes a material selected from the group consisting of Mg, Al, Hf, Zr, and a combination thereof.
20. The magnetic recording device of claim 17 , wherein a thickness of each of the first stress modulating layer and the second stress modulating layer is in a range from about 1 nanometer to about 100 nanometers.