Auxiliary plasma source for robust ignition and restrikes in a plasma chamber
A semiconductor processing system may include a semiconductor processing chamber configured to execute a recipe on a semiconductor wafer. The system may include a first plasma source to provide plasma to the semiconductor processing chamber and to be duty cycled during an execution of the recipe. The system may also include a second plasma source configured to maintain the plasma in the semiconductor processing chamber while the first plasma source is duty cycled.
1. A method for providing plasma to a semiconductor processing chamber, the method comprising:
processing a semiconductor wafer in the semiconductor processing chamber according to a recipe;
operating, by a controller, a first plasma source according to the recipe, wherein the first plasma source provides a plasma to the semiconductor processing chamber and duty cycles the first plasma source during execution of a recipe between a plurality of power levels comprising:
a first power level that results in the first plasma source striking the plasma in the semiconductor processing chamber;
a second power level that results in the plasma in the semiconductor processing chamber being quenched and transitioning to a gaseous state; and
a third power level that restrikes the plasma in the semiconductor processing chamber resulting in the plasma transitioning from the gaseous state to a plasma state, wherein the third power level uses less energy than the first power level; and
operating, by the controller, a second plasma source, wherein the second plasma source is in an ON state while the first plasma source is duty cycled.
2. The method of claim 1 , wherein operating the second plasma source provides a supply of electrons to the semiconductor processing chamber.
3. A semiconductor processing system comprising:
a semiconductor processing chamber configured to process a semiconductor wafer;
a first plasma source
a second plasma source; and
a controller programmed with instructions representing a recipe to perform operations comprising:
causing the first plasma source to provide a plasma to the semiconductor processing chamber and to duty cycle the first plasma source during execution of a recipe between a plurality of power levels comprising:
a first power level that results in the first plasma source striking the plasma in the semiconductor processing chamber;
a second power level that results in the plasma in the semiconductor processing chamber being quenched and transitioning to a gaseous state; and
a third power level that restrikes the plasma in the semiconductor processing chamber resulting in the plasma transitioning from the gaseous state to a plasma state, wherein the third power level uses less energy than the first power level; and
causing the second plasma source to maintain the plasma in the semiconductor processing chamber during the execution of the recipe while the first plasma source is duty cycled.
4. The semiconductor processing system of claim 3 , wherein the controller is further programmed to cause the first plasma source to be duty cycled between a plurality of power levels comprising a first power level that results in the first plasma source striking the plasma in the semiconductor processing chamber and a second power level where the plasma is sustained in the semiconductor processing chamber.
5. The semiconductor processing system of claim 3 , wherein the controller is further programmed to cause the second plasma source to provide a supply of electrons to the first plasma source.
6. The semiconductor processing system of claim 3 , wherein the controller is further programmed to hold the semiconductor processing chamber at a constant pressure.
7. The semiconductor processing system of claim 3 , wherein the recipe being executed on the semiconductor wafer is characterized by a duty cycle causing the first plasma source to be cycled between a plurality of power levels, and the second plasma source is configured to be in an ON state before the first plasma source initially strikes the plasma in the semiconductor processing chamber.
8. The semiconductor processing system of claim 7 , wherein the duty cycle operates in a frequency range of 5 Hz to 5000 Hz.
9. The semiconductor processing system of claim 3 , wherein the second plasma source comprises a microwave coaxial resonator.
10. The semiconductor processing system of claim 9 , wherein the microwave coaxial resonator is configured as an electron floodgun.
11. The semiconductor processing system of claim 3 , wherein the second plasma source comprises a toroidal plasma source configured as an electron floodgun.
12. The semiconductor processing system of claim 3 , wherein the second plasma source comprises a surface wave plasma source.
13. The semiconductor processing system of claim 12 , wherein the surface wave plasma source uses capacitive coupling to generate the plasma.
14. The semiconductor processing system of claim 12 , wherein the surface wave plasma source uses inductive coupling to generate the plasma.
15. The semiconductor processing system of claim 3 , wherein the semiconductor processing chamber and the first plasma source are integrated parts of the semiconductor processing system.
16. A semiconductor processing system comprising:
a semiconductor processing chamber configured to process semiconductor wafers;
a plasma source
a surface-wave-generating plasma source; and
a controller programmed with instructions representing a recipe to perform operations comprising:
causing the plasma source to provide a plasma to the semiconductor processing chamber and to duty cycle the plasma source during execution of a recipe between a plurality of power levels comprising:
a first power level that results in the plasma source striking the plasma in the semiconductor processing chamber;
a second power level that results in the plasma in the semiconductor processing chamber being quenched and transitioning to a gaseous state; and
a third power level that restrikes the plasma in the semiconductor processing chamber resulting in the plasma transitioning from the gaseous state to a plasma state, wherein the third power level uses less energy than the first power level; and
causing the surface-wave-generating plasma source to maintain the plasma in the semiconductor processing chamber through the execution of the recipe on the semiconductor wafers.
17. The semiconductor processing system of claim 16 , wherein the plasma source comprises a toroidal plasma source.
18. The semiconductor processing system of claim 16 , wherein the plasma source comprises a coaxial resonator.