Substrate processing method and substrate processing apparatus
A substrate processing apparatus includes: a mixer configured to mix sulfuric acid as a first component and a second component different from the first component to prepare an etchant; a nozzle configured to eject the etchant to a substrate; a first component supplier including a first flow path that supplies the first component to the mixer, a first instantaneous flowmeter and a first flow rate controller provided in the first flow path; a second component supplier including a second flow path different from the first flow path and configured to supply the second component to the mixer, a second instantaneous flowmeter and a second flow rate controller provided in the second flow path; and a controller configured to control the first and second flow rate controllers using average flow rates of the first component and the second component during the ejection of the etchant to the substrate.
1. A substrate processing apparatus comprising:
a mixer configured to mix sulfuric acid as a first component and a second component different from the first component to prepare an etchant;
a nozzle connected to the mixer and configured to eject the etchant to a substrate;
a first component supplier including a first flow path configured to supply the first component to the mixer, a first instantaneous flowmeter provided in the first flow path, and a first flow rate controller provided in the first flow path;
a second component supplier including a second flow path different from the first flow path and configured to supply the second component to the mixer, a second instantaneous flowmeter provided in the second flow path, and a second flow rate controller provided in the second flow path; and
a controller configured to control the first component supplier and the second component supplier,
wherein the controller is configured to control the first flow rate controller and the second flow rate controller and is configured to use an average flow rate of the first component and an average flow rate of the second component during the ejection of the etchant to the substrate for controlling the first flow rate controller and the second flow rate controller.
2. The substrate processing apparatus of claim 1 , wherein the controller is configured to control the first flow rate controller such that the average flow rate of the first component from start of the ejection of the etchant to the substrate to end of the ejection of the etchant to the substrate matches a first preset target value during the ejection of the etchant to the substrate, and to control the second flow rate controller such that the average flow rate of the second component from the start of the ejection of the etchant to the substrate to the end of the ejection to the substrate matches a second preset target value during the ejection of the etchant to the substrate.
3. The substrate processing apparatus of claim 2 , wherein the controller is configured to determine that an abnormality has occurred when the average flow rate of the first component or the average flow rate of the second component is out of a permissible range, during the ejection of the etchant to the substrate.
4. The substrate processing apparatus of claim 1 , wherein the controller is configured to control the first flow rate controller and the second flow rate controller such that a ratio of the average flow rate of the first component to the average flow rate of the second component per a unit time matches a first preset target value, during the ejection of the etchant to the substrate, and
the unit time is twice or more and 20 times or less a measurement cycle of the first instantaneous flowmeter or the second instantaneous flowmeter.
5. The substrate processing apparatus of claim 4 , wherein the controller is configured to determine that an abnormality has occurred when the average flow rate of the first component or the average flow rate of the second component is out of a permissible range, during the ejection of the etchant to the substrate.
6. The substrate processing apparatus of claim 1 , wherein the controller is configured to determine that an abnormality has occurred when the average flow rate of the first component or the average flow rate of the second component is out of a permissible range, during the ejection of the etchant to the substrate.
7. The substrate processing apparatus of claim 6 , wherein the average flow rate of the first component used for determining the abnormality is a latest average flow rate per a unit time, and
the unit time is twice or more and 20 times or less a measurement cycle of the first instantaneous flowmeter.
8. The substrate processing apparatus of claim 6 , wherein the average flow rate of the first component used for determining the abnormality is an average flow rate of the first component measured from start of the ejection of the etchant to the substrate to a time of the determination.
9. The substrate processing apparatus of claim 1 , wherein the second component is hydrogen peroxide water or pure water.