HYBRID BONDED CAPACITORS
Embodiments herein relate to systems, apparatuses, or processes for forming a decoupling capacitor within a multilayer die using hybrid bonding. Dummy bond pads may be used to form plates for the capacitor and a high-k dielectric material may be deposited between the plates prior to hybrid bonding. Other embodiments may be described and/or claimed.
1 . A capacitor comprising:
a first substrate;
a first metal layer in the first substrate;
a second substrate;
a second metal layer in the second substrate; and
a dielectric layer between the first metal layer and the second metal layer, wherein the first metal layer and the dielectric layer are in physical contact, the second metal layer and the dielectric layer are in direct physical contact, and wherein the first metal layer and the second layer are electrically isolated from each other.
2 . The capacitor of claim 1 ,
wherein the dielectric layer is on the first metal layer in the first substrate.
3 . The capacitor of claim 2 , wherein a portion of the dielectric layer is on the first metal layer in the first substrate, and wherein another portion of the dielectric layer is on the second metal layer in the second substrate.
4 . The capacitor of claim 1 , wherein the first substrate and the second substrate are hybrid bonded.
5 . The capacitor of claim 1 , wherein the dielectric comprises hafnium or zirconium.
6 . The capacitor of claim 1 , wherein the dielectric layer has a thickness ranging from 3 µm to 10 µm.
7 . The capacitor of claim 1 , wherein the first substrate includes a selected one of: silicon or glass.
8 . The capacitor of claim 1 , wherein the first metal layer in the first substrate extends from a first side of the first substrate to a second side of the first substrate opposite the first side of the first substrate.
9 . The capacitor of claim 1 , wherein the first metal layer and the second metal layer overlap with respect to a direction perpendicular to a plane of a side of the first substrate.
10 . The capacitor of claim 1 , wherein the first metal layer or the second metal layer are dummy bond pads.
11 . The capacitor of claim 1 , wherein the first metal layer is electrically coupled with a Vdd and the second metal layer is electrically coupled with a Vss.
12 . The capacitor of claim 11 , further comprising:
a third metal layer that extends from a first side of the first substrate to a second side of the first substrate opposite the first side;
a fourth metal layer that extends from a first side of the second substrate to a second side of the second substrate opposite the first side; and
wherein the third metal layer is electrically coupled with the first metal layer and electrically isolated from the second metal layer, and wherein the fourth metal layer is electrically coupled with the second metal layer and electrically isolated from the first metal layer.
13 . The capacitor of claim 1 , wherein the first metal layer and the second metal layer include copper.
14 . The capacitor of claim 1 , wherein the dielectric layer includes a selected one or more of: hafnium silicate, zirconium silicate, hafnium dioxide, zirconium dioxide, hafnium, zirconium, silicon nitride, silicon oxide, silicon, nitrogen, or oxygen.
15 . The capacitor of claim 1 , wherein the capacitor is a decoupling capacitor.
16 . A method comprising:
providing a first substrate;
forming a first metal layer in the first substrate;
providing a second substrate;
forming a second metal layer in the second substrate;
applying a dielectric layer on the first metal layer or on the second metal layer;
hybrid bonding the first substrate to the second substrate, wherein the second metal layer is physically coupled with the dielectric layer, the first metal layer is physically coupled with the dielectric layer, and wherein the first metal layer and the second metal layer are electrically isolated from each other.
17 . The method of claim 16 , wherein applying the dielectric layer further includes applying the dielectric layer using a chemical vapor deposition (CVD), or atomic layer deposition (ALD) process.
18 . The method of claim 16 , wherein the first substrate is a selected one of: silicon or glass; and wherein the second substrate is a selected one of: silicon or glass.
19 . The method of claim 16 , wherein the first metal layer and the second metal layer include copper.
20 . The method of claim 16 , wherein the dielectric layer has a thickness ranging from 3 µm to 10 µm.
21 . A package comprising:
a multilayer substrate that includes a capacitor;
a metal layer on the multilayer substrate and electrically coupled with the capacitor; and
wherein the capacitor includes:
a first substrate;
a first metal layer in the first substrate;
a second substrate;
a second metal layer in the second substrate;
a dielectric layer between the first metal layer and the second metal layer, wherein the first metal layer and the dielectric layer are in direct physical contact, the second metal layer and the dielectric layer are in direct physical contact, and wherein the first metal layer and the second layer are electrically isolated from each other.
22 . The package of claim 21 , wherein the first substrate and the second substrate are hybrid bonded.
23 . The package of claim 21 , wherein the dielectric comprises hafnium or zirconium.
24 . The package of claim 21 , wherein the first metal layer and the second metal layer overlap with respect to a direction perpendicular to a plane of a side of the first substrate.
25 . The package of claim 21 , wherein the first metal layer is electrically coupled with a Vdd and the second metal layer is electrically coupled with a Vss.