IP Library Granted Patent US 11,783,757
Granted Patent B2
US 11,783,757 · App. 17/562,425 · Granted Oct 10, 2023

Display and electronic device including the display

Inventors: Kei Takahashi (Isehara, JP); Koji Kusunoki (Isehara, JP); Kazunori Watanabe (Machida, JP); Susumu Kawashima (Atsugi, JP); Kouhei Toyotaka (Atsugi, JP); Shunpei Yamazaki (Setagaya, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G09G3/32H01L27/124H01L27/1225H01L27/1255G09G2300/0809G09G2310/0243G09G2310/06H01L25/0753H01L29/7869H01L33/32
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Quick Facts
Patent No.
US 11,783,757
App. No.
17/562,425
Granted
Oct 10, 2023
Kind
B2
Abstract

A novel display is provided. A display having a small change in chromaticity of a micro light-emitting diode in proportion to current density is provided. A display capable of reducing power consumption in the driver circuit when displaying a still image is provided. The display includes a plurality of pixels each including a display element and a microcontroller. The microcontroller includes a first transistor, a triangular wave generator circuit, a comparator, a switch, and a constant current circuit. The first transistor has a function of retaining a potential corresponding to data written to the pixel by being switched off. The triangular wave generator circuit has a function of generating a triangular wave signal. The comparator has a function of generating an output signal corresponding to the potential and the triangular wave signal. The switch has a function of controlling whether or not to make a current flowing in the constant current circuit flow to the display element in accordance with the output signal.

Claims (20)

1. A display device comprising a pixel, the pixel comprising:

a display element comprising a micro light-emitting diode;

a first transistor comprising an oxide semiconductor in a channel formation region;

a second transistor comprising silicon in a channel formation region;

a third transistor comprising silicon in a channel formation region; and

a capacitor,

wherein one of a source and a drain of the first transistor is electrically connected to a gate of the second transistor and one terminal of the capacitor,

wherein one of a source and a drain of the second transistor is electrically connected to the other terminal of the capacitor, and

wherein one of a source and a drain of the third transistor is electrically connected to the other of the source and the drain of the first transistor and a gate of the third transistor.

2. The display device according to claim 1 ,

wherein the micro light-emitting diode comprises an active layer and a clad layer comprising gallium nitride and a compound of indium and gallium nitride.

3. The display device according to claim 1 ,

wherein the first transistor is stacked over the second transistor.

4. The display device according to claim 1 ,

wherein the micro light-emitting diode is transferred from a first substrate to a second substrate,

wherein the first substrate is a carrier substrate provided with the micro light-emitting diode, and

wherein the second substrate is a transistor substrate provided with the first transistor and the second transistor.

5. The display device according to claim 1 ,

wherein the first transistor and the second transistor are included in a constant current circuit.

6. An electronic device comprising the display device according to claim 1 .

Priority Claims (2)
JP 2017-247227 · Dec 25, 2017 · national
JP 2018-029746 · Feb 22, 2018 · national
Continuity (2)
Continuation 16768720
Related Publication 20220122526A1 · Apr 21, 2022
Cited By (2)
US 12,567,351 US 12,575,179