Semiconductor device and electronic system including the same
A semiconductor device including a peripheral circuit structure on a substrate, a horizontal layer on the peripheral circuit structure, an electrode structure including electrodes on the horizontal layer, the electrodes including pads arranged in a stepwise shape, a planarization insulating layer covering the pads, a contact plug penetrating the planarization insulating layer and coupled to one of the pads, a penetration via penetrating the planarization insulating layer and coupled to the peripheral circuit structure, and a vertical conductive structure between the electrode structure and the penetration via may be provided. The vertical conductive structure may have a bottom surface located at a level that is higher than a top surface of the horizontal layer and is lower than a bottom end of the contact plug.
1. A semiconductor device, comprising:
a peripheral circuit structure on a substrate;
a horizontal layer on the peripheral circuit structure, the horizontal layer including a semiconductor material;
an electrode structure including electrodes stacked on the horizontal layer, the electrodes including pads arranged in a stepwise shape;
a planarization insulating layer covering the pads;
a contact plug penetrating the planarization insulating layer and coupled to one of the pads;
a penetration via penetrating the planarization insulating layer and coupled to the peripheral circuit structure; and
a vertical conductive structure between the electrode structure and the penetration via, the vertical conductive structure being in an electrically-floated state,
wherein the vertical conductive structure has a bottom surface located at a level that is higher than a top surface of the horizontal layer and is lower than a bottom end of the contact plug.
2. The semiconductor device of claim 1 , wherein the vertical conductive structure is between a side surface of a lowermost one of the electrodes and the penetration via.
3. The semiconductor device of claim 1 , further comprising:
an electrode separation structure crossing the electrode structure in a first direction parallel to a top surface of the substrate,
wherein a top surface of the vertical conductive structure is at a level higher than a top surface of the electrode separation structure.
4. The semiconductor device of claim 1 , further comprising:
an upper interconnection line on the planarization insulating layer, the upper interconnection line connecting the contact plug to the penetration via,
wherein the vertical conductive structure is electrically disconnected from the upper interconnection line.
5. The semiconductor device of claim 1 , wherein a top surface of the vertical conductive structure is at a same vertical level as a top surface of the penetration via.
6. The semiconductor device of claim 3 , wherein a bottom surface of the electrode separation structure is at a level between a top surface of a lowermost one of the electrodes and a bottom surface of the horizontal layer.
7. The semiconductor device of claim 1 , wherein the bottom surface of the vertical conductive structure has a width smaller than that of a top surface of the vertical conductive structure.
8. The semiconductor device of claim 1 , wherein the vertical conductive structure comprises a plurality of conductive pillars in an electrically floated state.
9. The semiconductor device of claim 1 , wherein
the vertical conductive structure comprises a first conductive pillar and a second conductive pillar, and
bottom surfaces of the first conductive pillar and the second conductive pillar are at levels different from each other.
10. The semiconductor device of claim 1 , wherein a top surface of the vertical conductive structure is at a level lower than a top surface of the contact plug.
11. The semiconductor device of claim 1 , further comprising:
a second vertical conductive structure vertically overlapping one of the pads,
wherein the second vertical conductive structure has a bottom surface at a level between a top surface of the one of the pads and a top surface of the electrode structure.
12. The semiconductor device of claim 1 , further comprising:
a second vertical conductive structure vertically overlapping one of side surfaces of the electrodes,
wherein the second vertical conductive structure has a bottom surface at a level between a top surface of one of the pads and a top surface of the electrode structure.
13. A semiconductor device, comprising:
a substrate including a cell array region, a connection region, and a peripheral line region, which are arranged in a first direction;
a peripheral circuit structure having a peripheral circuit on the substrate and a landing pad connected to the peripheral circuit;
a horizontal layer on the peripheral circuit structure;
an electrode structure including electrodes stacked on the horizontal layer, the electrodes having a staircase structure on the connection region;
an electrode separation structure crossing the electrode structure in the first direction;
vertical channel structures on the cell array region and penetrating the electrode structure;
a planarization insulating layer covering the electrode structure;
a contact plug on the connection region, the contact plug penetrating the planarization insulating layer and coupled to one of the electrodes;
a penetration via on the peripheral line region, the penetration via penetrating the planarization insulating layer and coupled to the landing pad;
an upper interconnection line on the planarization insulating layer, the upper interconnection line connecting the contact plug to the penetration via; and
a vertical conductive structure between the electrode structure and the penetration via,
wherein the vertical conductive structure has a bottom surface covered with the planarization insulating layer.
14. The semiconductor device of claim 13 , wherein the vertical conductive structure is electrically disconnected from the upper interconnection line.
15. The semiconductor device of claim 13 , wherein the vertical conductive structure is between the penetration via and a side surface of a lowermost one of the electrodes.
16. The semiconductor device of claim 13 , wherein a top surface of the vertical conductive structure is at a level higher than a top surface of the electrode separation structure.
17. The semiconductor device of claim 13 , wherein a top surface of the vertical conductive structure is at a same vertical level as a top surface of the penetration via.
18. The semiconductor device of claim 13 , wherein the vertical conductive structure comprises a plurality of conductive pillars in an electrically floated state.
19. An electronic system, comprising:
a main substrate;
a semiconductor device on the main substrate; and
a controller on the main substrate and electrically connected to the semiconductor device,
wherein the semiconductor device comprises,
a peripheral circuit structure having a peripheral circuit on a substrate and a landing pad connected to the peripheral circuit,
an electrode structure including electrodes stacked on the peripheral circuit structure, the electrodes including pads arranged in a stepwise shape,
a planarization insulating layer covering the pads,
a contact plug penetrating the planarization insulating layer and coupled to one of the pads,
a penetration via penetrating the planarization insulating layer and coupled to the landing pad, and
a vertical conductive structure between the contact plug and the penetration via, and
wherein the vertical conductive structure has a bottom surface covered with the planarization insulating layer.
20. The electronic system of claim 19 , wherein
the main substrate further comprises interconnection patterns electrically connecting the semiconductor device to the controller,
the semiconductor device further comprises a horizontal layer between the peripheral circuit structure and the electrode structure, and
the bottom surface of the vertical conductive structure is at a level higher than a top surface of the horizontal layer.