IP Library › Granted Patent US 11,823,879
Granted Patent B2
US 11,823,879 · App. 17/573,368 · Granted Nov 21, 2023

Film formation apparatus and film formation method

Inventors: Masato Shinada (Tokyo, JP); Tetsuya Miyashita (Yamanashi, JP); Naoki Watanabe (Yamanashi, JP)
Assignee: Tokyo Electron Limited
H01J37/3429C23C14/3464H01J37/3435H01J37/3441H01J37/3447H01J2237/332
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Quick Facts
Patent No.
US 11,823,879
App. No.
17/573,368
Granted
Nov 21, 2023
Kind
B2
Abstract

There is provided a film formation apparatus which forms a film on a substrate by sputtering. The apparatus comprises: a substrate holder configured to hold the substrate; and a plurality of cathodes configured to hold targets that emit sputtered particles, and connected to a power supply. At least one of the plurality of cathodes holds the targets of a plurality of types.

Claims (21)

1. A film formation apparatus which forms a film on a substrate by sputtering, the apparatus comprising:

a substrate holder configured to hold the substrate;

a plurality of cathodes configured to hold targets that emit sputtered particles;

a shutter installed between the cathodes and the substrate holder and having an opening; and

a rotating mechanism configured to rotate the shutter,

wherein at least one of the plurality of cathodes holds multiple first targets of different materials on a same side of a same cathode of the plurality of cathodes, the multiple first targets being spaced apart from each other, and

wherein the shutter and the rotating mechanism are configured to selectively expose one target of the multiple first targets on the same side of the same cathode to the substrate holder while the other target(s) of the multiple first targets are covered by the shutter.

2. The film formation apparatus of claim 1 , wherein a shield is installed at said at least one of the plurality of cathodes so that the multiple first targets are spaced apart from one another.

3. The film formation apparatus of claim 1 , wherein another cathode holds a second target larger than each of the multiple first targets.

4. The film formation apparatus of claim 1 ,

wherein the rotating mechanism is configured to selectively expose a specific target of all the targets held by the cathodes in the film formation apparatus to the substrate holder through the opening by rotating the shutter.

5. The film formation apparatus of claim 4 , wherein a first shutter and a second shutter, each of which has an opening, are provided as the shutter, and

the rotating mechanism selectively exposes one of all the targets held by the cathodes in the film formation apparatus to the substrate holder through the opening of the first shutter and the opening of the second shutter by rotating the first shutter and the second shutter.

6. The film formation apparatus of claim 5 , wherein the rotating mechanism switches between selectively exposing one target of all the targets held by the cathodes in the film formation apparatus to the substrate holder through the openings of the first shutter and the second shutter and selectively exposing two or more of all the targets held by the cathodes in the film formation apparatus to the substrate holder through the openings of the first shutter and the second shutter, by rotating the first shutter and the second shutter.

7. A film formation method which uses a film formation apparatus to form a film on a substrate by sputtering, the film formation apparatus including:

a substrate holder configured to hold the substrate;

a plurality of cathodes configured to hold targets that emit sputtered particles; and

a first shutter and a second shutter installed between the cathodes and the substrate holder and each having a plurality of openings,

wherein at least one of the plurality of cathodes holds multiple targets of different materials on a same side of a same cathode of the plurality of cathodes, the multiple targets being spaced apart from each other, wherein the first and second shutters are configured to selectively expose one target of the multiple first targets on the same side of the same cathode to the substrate holder while the other target(s) of the multiple first targets are covered by at least one of the first and second shutters, the method comprising:

selectively exposing one target of all the targets held by the cathodes in the film formation apparatus to the substrate holder through the openings of the first shutter and the second shutter by rotating the first shutter and the second shutter, and forming a layer of a single material on the substrate; and

selectively exposing two or more of all the targets held by the cathodes in the film formation apparatus to the substrate holder through the openings of the first shutter and the second shutter by rotating the first shutter and the second shutter, and forming an alloy layer on the substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 11, 2022
From: SHINADA, MASATO; MIYASHITA, TETSUYA; WATANABE, NAOKI
To: TOKYO ELECTRON LIMITED
Reel/Frame 058624/0584 →
Priority Claims (1)
JP 2021-004131 · Jan 14, 2021 · national
Continuity (1)
Related Publication 20220223390A1 · Jul 14, 2022
Cited By (1)
US 12,560,832