Dynamic memory with sustainable storage architecture and clean up circuit

1. A DRAM chip, comprising:

a first sustaining voltage generator producing a first voltage level which is higher than a voltage level of the signal ONE utilized in the DRAM chip;

a first supplying voltage source generating the voltage level corresponding to signal ONE utilized in the DRAM chip, wherein the first sustaining voltage generator and the first supplying voltage source are physically separate each other;

a DRAM cell comprising an access transistor and a storage capacitor;

a sense amplifier coupled to a bit line and a complementary bit line, wherein the bit line is coupled to the storage capacitor through the access transistor; wherein the sense amplifier is selectively coupled to the first sustaining voltage generator and the first supplying voltage source and does not simultaneously receive the voltage level and the first voltage level;

an equalization circuit coupled to the bit line and the complementary bit line, wherein the equalization circuit couples the bit line and the complementary bit line to a preset reference voltage during an equalization period; and

a clean up circuit coupled to the sense amplifier or the equalization circuit;

wherein the first sustaining voltage generator is electrically coupled to the bit line during a turning-off period of the access transistor, and the clean up circuit generates a clean up pulse to mitigate a difference between a voltage of the bit line and a preset reference voltage during the equalization period, a width of the clean up pulse depends on a restore voltage, and the restore voltage is higher than a voltage level of a signal ONE utilized in the DRAM chip.

2. The DRAM chip in claim 1 , further comprising a word line coupled to a gate terminal of the access transistor, wherein the word-line is selected to turn on the access transistor for a first period and a second period which is after the first period, and the first sustaining voltage generator is electrically coupled to the bit line during the second period.

3. The DRAM chip in claim 2 , wherein the first sustaining voltage generator is electrically coupled to the sense amplifier during the second period, and the first sustaining voltage generator is electrically coupled to the storage capacitor of the DRAM cell through the sense amplifier and the bit line.

4. The DRAM chip in claim 2 , wherein the first period is an access operation period, and the second period is a restore phase period.

5. The DRAM chip in claim 4 , wherein a kicking charge source is electrically coupled to the bit line during the access operation period.

6. The DRAM chip in claim 2 , wherein the first period comprises a first kick period and a second kick period separate from the first kick period, a kicking charge source is coupled to the bit line during the first kick period, or coupled to the bit line during the first kick period and the second kick period.

7. The DRAM chip in claim 6 , wherein the voltage level of kicking charge source is smaller than that of the first sustaining voltage generator.

8. The DRAM chip in claim 2 , wherein the word-line is selected to turn on the access transistor for the first period and the second period according to a refresh operation.

9. The DRAM chip in claim 8 , wherein a kicking charge source is electrically coupled to the bit line for a kick period which is prior to the first period, and the first sustaining voltage generator is electrically coupled to the bit line for all the second period.

10. The DRAM chip in claim 9 , wherein the second period is at least 20% of the sum of the kick period, the first period and the second period.

11. The DRAM chip in claim 9 , wherein the second period is at least 50% of the sum of the kick period, the first period and the second period.

12. The DRAM chip in claim 1 , wherein the equalization period is after the turning-off period of the access transistor, and the clean up circuit is activated during equalization period such that the voltage of the bit line is equal to the preset reference voltage after the equalization period.

13. The DRAM chip in claim 12 , wherein the clean up circuit is activated by a clean up pulse, and a width of the clean up pulse is not greater than that of the equalization period.

14. The DRAM chip in claim 12 , wherein the clean up circuit is activated by a clean up pulse, and a rising edge of the clean up pulse is substantially aligned with a rising edge of the equalization period.

15. The DRAM chip in claim 1 , wherein the clean up circuit comprising a switch circuit coupled to the sense amplifier and a predetermined voltage.

16. The DRAM chip in claim 1 , wherein the clean up circuit comprising a switch circuit coupled to the equalization circuit and a predetermined voltage.

17. A DRAM chip, comprising:

a DRAM cell comprising an access transistor and a storage capacitor;

a sense amplifier coupled to a bit line and a complementary bit line, wherein the bit line is coupled to the storage capacitor through the access transistor;

an equalization circuit coupled to the bit line and the complementary bit line, wherein the equalization circuit couples the bit line and the complementary bit line to a preset reference voltage during an equalization period; and

a clean up circuit electrically coupled to the bit line and the complementary bit line during the equalization period;

wherein the clean up circuit generates a clean up pulse to mitigate a difference between a voltage of the bit line and a preset reference voltage during the equalization period, a width of the clean up pulse depends on a restore voltage, and the restore voltage is higher than a voltage level of a signal ONE utilized in the DRAM chip.

18. The DRAM chip in claim 17 , wherein the voltage of the bit line is equal to the preset reference voltage after the equalization period.

19. The DRAM chip in claim 17 , the clean up circuit electrically coupled to the bit line and the complementary bit line during the equalization period through the sense amplifier or the equalization circuit.

20. The DRAM chip in claim 19 , wherein the clean up circuit comprising a switch circuit coupled to the sense amplifier and a predetermined voltage.

21. The DRAM chip in claim 19 , wherein the clean up circuit comprising a switch circuit coupled to the equalization circuit and a predetermined voltage.

22. The DRAM chip in claim 17 , wherein the clean up circuit is activated by the clean up pulse during the equalization period, and a rising edge of the clean up pulse is substantially aligned with a rising edge of the equalization period.

23. The DRAM chip in claim 17 , further comprising a comparator circuit receiving the voltage of the bit line, the voltage of the complementary bit line and the preset reference voltage at the beginning of or during the equalization period, and sends a control signal to the clean up circuit in the event one half of a sum of the voltage of the bit line and the voltage of the complementary bit line is not equal to preset reference voltage.