Methods of forming air spacers in semiconductor devices
A semiconductor structure includes a source/drain (S/D) feature disposed in a semiconductor layer, a metal gate stack (MG) disposed in a first interlayer dielectric (ILD) layer and adjacent to the S/D feature, a second ILD layer disposed over the MG, and an S/D contact disposed over the S/D feature. The semiconductor structure further includes an air gap disposed between a sidewall of a bottom portion of the S/D contact and the first ILD layer, where a sidewall of a top portion of the S/D contact is in direct contact with the second ILD layer.
1. A method, comprising:
providing a metal gate stack (MG) disposed in a first interlayer dielectric (ILD) layer, a source/drain (S/D) feature disposed adjacent to the MG, and a second ILD layer disposed over the MG;
forming a contact trench in the first and the second ILD layers to expose the S/D feature;
forming a sacrificial layer in the contact trench;
forming an S/D contact over the sacrificial layer;
removing the sacrificial layer to form an air gap on sidewalls of the S/D contact; and
filling a top portion of the air gap disposed above the MG, such that a bottom portion of the air gap is sealed by the second ILD layer.
2. The method of claim 1 , wherein removing the top portion of the air gap includes performing an ion implantation process to the second ILD layer, thereby expanding the second ILD layer to seal the air gap.
3. The method of claim 2 , wherein performing the ion implantation process includes bombarding the second ILD layer with particles that include germanium, arsenic, or a combination thereof.
4. The method of claim 1 , further comprising, after removing the top portion of the air gap, forming an etch-stop layer (ESL) over the second ILD layer.
5. The method of claim 1 , wherein removing the top portion of the air gap includes:
forming an etch-stop layer (ESL) over the second ILD layer, such that the ESL partially fills the air gap; and
thereafter, bombarding the second ILD layer with particles that include germanium, arsenic, or a combination thereof.
6. The method of claim 5 , wherein bombarding the second ILD layer leaves a portion of the particles in the ESL.
7. The method of claim 1 , wherein the sacrificial layer includes amorphous silicon and the second ILD layer includes silicon oxide.
8. A method, comprising:
forming a source/drain (S/D) feature over a semiconductor substrate;
forming a first interlayer dielectric (ILD) layer over the S/D feature;
forming a second ILD layer over the first ILD layer;
forming an opening in the second ILD layer to expose the S/D feature;
depositing a sacrificial layer along sidewalls of the opening;
forming an S/D contact feature over the sacrificial layer;
removing the sacrificial layer to form an air gap wherein the air gap extends from the second ILD layer to expose the S/D feature; and
treating the second ILD layer to seal a top portion of the air gap disposed in the second ILD layer without sealing a bottom portion of the air gap disposed in the first ILD layer.
9. The method of claim 8 , wherein treating the second ILD layer includes bombarding the second ILD layer with particles that results in the second ILD layer to merge with a sidewall of the S/D contact feature, thereby sealing the top portion of the air gap.
10. The method of claim 9 , wherein the particles include germanium, arsenic, or a combination thereof.
11. The method of claim 9 , wherein bombarding the second ILD layer is implemented at an angle relative to a direction normal to a top surface of the second ILD layer.
12. The method of claim 8 , further comprising forming an etch-stop layer (ESL) over the second ILD layer after treating the second ILD layer.
13. The method of claim 8 , further comprising forming an etch-stop layer (ESL) over the second ILD layer before treating the second ILD layer, such that a portion of the ESL partially fills the air gap.
14. A method, comprising:
providing a semiconductor structure that includes a source/drain (S/D) feature disposed adjacent to a gate structure, wherein the gate structure is disposed in a first interlayer dielectric (ILD) layer;
forming a second ILD layer over the gate structure;
removing portions of the first and the second ILD layers to expose the S/D feature in a first opening;
forming a sacrificial layer in the first opening;
forming a conductive feature over the sacrificial layer to fill the first opening;
etching the sacrificial layer to form a second opening, wherein the second opening includes a top portion separating the conductive feature from the second ILD layer and a bottom portion separating the conductive feature from the first ILD layer; and
merging the second ILD layer with a sidewall of the conductive feature, thereby sealing the top portion of the second opening with respect to the bottom portion.
15. The method of claim 14 , wherein the sacrificial layer includes amorphous silicon.
16. The method of claim 14 , wherein the merging of the second ILD layer includes implanting particles to the second ILD layer, thereby causing the second ILD layer to expand toward the sidewall of the conductive feature.
17. The method of claim 16 , wherein the particles include germanium, arsenic, or a combination thereof.
18. The method of claim 14 , further comprising forming an etch-stop layer (ESL) over the second ILD layer, such that a portion of the ESL extends into the second opening.
19. The method of claim 14 , further comprising forming an etch-stop layer (ESL) over the merged second ILD layer.
20. The method of claim 14 , wherein the sacrificial layer includes amorphous silicon and the second ILD layer includes silicon oxide.