Image display device manufacturing method and image display device
A method for manufacturing an image display device includes: providing a second substrate that includes a first substrate, and a semiconductor layer grown on the first substrate, the semiconductor layer including a light-emitting layer; providing a third substrate including: a light-transmitting substrate, a circuit element formed on the light-transmitting substrate, a wiring layer connectable to the circuit element, and a first insulating film covering the circuit element and the wiring layer; bonding the semiconductor layer to the third substrate; forming a light-emitting element from the semiconductor layer; forming a second insulating film covering the light-emitting element; forming a via extending through the first and second insulating films; and electrically connecting the light-emitting element and the circuit element by the via. The wiring layer includes a light-reflective part. The light-emitting element is located on the light-reflective part.
1. A method for manufacturing an image display device, the method comprising:
providing a second substrate that comprises a first substrate, and a semiconductor layer grown on the first substrate, the semiconductor layer comprising a light-emitting layer;
providing a third substrate comprising:
a light-transmitting substrate,
a circuit element formed on the light-transmitting substrate,
a wiring layer connectable to the circuit element, and
a first insulating film covering the circuit element and the wiring layer;
bonding the semiconductor layer to the third substrate;
forming a light-emitting element from the semiconductor layer;
forming a second insulating film covering the light-emitting element;
forming a via extending through the first and second insulating films; and
electrically connecting the light-emitting element and the circuit element by the via; wherein:
the wiring layer comprises a light-reflective part;
the light-emitting element is located on the light-reflective part such that a portion of the first insulating film is located between the light emitting element and the light-reflective part; and
in a plan view, an outer perimeter of the light-emitting element, when projected onto the light-reflective part, is located within an outer perimeter of the light-reflective part.
2. The method according to claim 1 , wherein:
the step of providing the third substrate comprises:
providing a mask on the light-transmitting substrate, wherein the mask has an opening at a location at which the light-reflective part is formed, and performing isotropic etching, and
subsequently forming the wiring layer.
3. The method according to claim 1 , wherein:
the third substrate further comprises a fourth substrate located between the light-transmitting substrate and the circuit element;
the third substrate is flexible; and
the method further comprises, after the step of bonding the semiconductor layer to the third substrate, removing the light-transmitting substrate.
4. The method according to claim 3 , wherein:
the light-transmitting substrate is a glass substrate.
5. The method according to claim 1 , further comprising:
before the step of bonding the semiconductor layer to the third substrate, removing the first substrate.
6. The method according to claim 1 , further comprising:
after the step of bonding the semiconductor layer to the third substrate, removing the first substrate.
7. The method according to claim 1 , further comprising:
exposing, from under the second insulating film, a light-emitting surface of the light-emitting element opposite to a surface of the light-emitting element at the first insulating film side.
8. The method according to claim 7 , further comprising:
forming a light-transmitting electrode at the exposed light-emitting surface.
9. The method according to claim 1 , wherein:
the first substrate comprises silicon or sapphire.
10. The method according to claim 1 , wherein:
the semiconductor layer comprises a gallium nitride compound semiconductor.
11. The method according to claim 1 , further comprising:
forming a wavelength conversion member on the light-emitting element.