COMPOSITION, SILICON-CONTAINING FILM, METHOD OF FORMING SILICON-CONTAINING FILM, AND METHOD OF TREATING SEMICONDUCTOR SUBSTRATE
A composition includes a solvent and at least one compound selected from the group consisting of: a first compound which comprises a first structural unit comprising a Si—H bond, and a second structural unit represented by formula (2), and a second compound which comprises the second structural unit represented by the formula (2). X represents a monovalent organic group having 1 to 20 carbon atoms which comprises a nitrogen atom; e is an integer of 1 to 3; R 4 represents a monovalent organic group having 1 to 20 carbon atoms, or a hydroxy group, a hydrogen atom, or a halogen atom; and f is an integer of 0 to 2. A sum of e and f is no greater than 3. In the case where the at least one compound is the second compound, f is 1 or 2, and at least one R 4 represents a hydrogen atom.
1 . A composition comprising:
at least one compound selected from the group consisting of:
a first compound which comprises a first structural unit comprising a Si—H bond, and a second structural unit represented by formula (2), and
a second compound which comprises the second structural unit represented by the formula (2); and
a solvent,
wherein, in the formula (2), X represents a monovalent organic group having 1 to 20 carbon atoms which comprises a nitrogen atom; e is an integer of 1 to 3, wherein in a case in which e is no less than 2, a plurality of Xs are identical or different from each other; R 4 represents a monovalent organic group having 1 to 20 carbon atoms, or a hydroxy group, a hydrogen atom, or a halogen atom; and f is an integer of 0 to 2; wherein in a case in which f is 2; two R 4 s are identical or different from each other, and wherein a sum of e and f is no greater than 3, wherein
in the case in which the at least one compound is the second compound, f is 1 or 2, and at least one R 4 represents a hydrogen atom.
2 . The composition according to claim 1 , wherein the first structural unit is at least one selected from the group consisting of: a structural unit represented by formula (1-1); and a structural unit represented by formula (1-2):
wherein; in the formula (1-1), a is an integer of 1 to 3; R 1 represents a monovalent organic group having 1 to 20 carbon atoms, or a hydroxy group or a halogen atom; and b is an integer of 0 to 2, wherein in a case in which b is 2, two R 1 s are identical or different from each other, and wherein a sum of a and b is no greater than 3, and
in the formula (1-2), c is an integer of 1 to 3; R 2 represents a monovalent organic group having 1 to 20 carbon atoms, or a hydroxy group or a halogen atom; d is an integer of 0 to 2, wherein in a case in which d is 2, two R 2 s are identical or different from each other; R 3 represents a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms which bonds to two silicon atoms; and p is an integer of 1 to 3, wherein in a case in which p is no less than 2, a plurality of R 3 s are identical or different from each other, and wherein a sum of c, d, and p is no greater than 4.
3 . The composition according to claim 1 , wherein the compound further comprises at least one third structural unit selected from the group consisting of: a structural unit represented by formula (3-1); and a structural unit represented by formula (3-2):
wherein, in the formula (3-1), R 5 represents a monovalent organic group having 1 to 20 carbon atoms, or a hydroxy group or a halogen atom; and g is an integer of 1 to 3, wherein in a case in which g is no less than 2, a plurality of R 5 s are identical or different from each other, and
in the formula (3-2), R 6 represents a monovalent organic group having 1 to 20 carbon atoms, or a hydroxy group or a halogen atom; h is 1 or 2, wherein in a case in which h is 2, two R 6 s are identical or different from each other; R 7 represents a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms which bonds to two silicon atoms; and q is an integer of 1 to 3, wherein in a case in which q is no less than 2, a plurality of R 7 s are identical or different from each other, and wherein a sum of h and q is no greater than 4.
4 . The composition according to claim 1 , wherein the monovalent organic group having 1 to 20 carbon atoms which comprises a nitrogen atom and is represented by X in the formula (2), is a group which comprises a cyano group, a group which comprises an isocyanate group, or a group represented by formula (2-3) or (2-4):
wherein, in the formulae (2-3) and (2-4), * denotes a binding site to the silicon atom in the formula (2),
in the formula (2-3), R 10 represents a single bond or a divalent organic group having 1 to 20 carbon atoms; and with regard to R 11 and R 12 , R 11 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, and R 12 represents a monovalent organic group having 1 to 20 carbon atoms, or R 11 and R 12 taken together represent a ring structure having 4 to 20 ring atoms together with the atom chain to which R 11 and R 12 bond, and
in the formula (2-4), R 13 represents a single bond or a divalent organic group having 1 to 20 carbon atoms; and with regard to R 14 and R 15 , R 14 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, and R 15 represents a monovalent organic group having 1 to 20 carbon atoms, or R 14 and R 15 taken together represent a ring structure having 4 to 20 ring atoms together with the atom chain to which R 14 and R 15 bond.
5 . The composition according to claim 4 , wherein the group which comprises a cyano group is represented by formula (2-1):
wherein in the formula (2-1), R 9 represents a single bond or a divalent organic group having 1 to 20 cat bon atoms; and * denotes a binding site to the silicon atom in the formula (2).
6 . The composition according to claim 4 , wherein the group which comprises an isocyanate group is represented by formula)
wherein, in the formula (2-2) R 9 represents a single bond or a divalent organic group having 1 to 20 carbon atoms; and * denotes a binding site to the silicon atom in the formula (2).
7 . The composition according to claim 1 , wherein a proportion of the second structural unit with respect to total structural units constituting the compound is no less than 5 mol % and no greater than 95 mol %.
8 . The composition according to claim 2 , wherein the composition comprises the first compound, and the first compound is represented by the formula (1-2).
9 . The composition according to claim 1 , which is suitable for forming a silicon-containing film.
10 . The composition according to claim 8 , which is suitable for a semiconductor substrate-producing process.
11 . A silicon-containing film formed from the composition according to claim 1 .
12 . A method of forming a silicon-containing film, the method comprising:
applying a silicon-containing-film-forming composition directly or indirectly on a substrate, wherein
the silicon-containing-film-forming composition comprises:
at least one compound selected from the group consisting of:
a first compound which comprises a first structural unit comprising a Si—H bond, and a second structural unit represented by formula (2); and
a second compound which comprises the second structural unit represented by the formula (2); and
a solvent,
wherein, in the formula (2), X represents a monovalent organic group having 1 to 20 carbon atoms which comprises a nitrogen atom; e is an integer of 1 to 3, wherein in a case in which e is no less than 2, a plurality of Xs are identical or different from each other; R 4 represents a monovalent organic group having 1 to 20 carbon atoms, or a hydroxy group, a hydrogen atom, or a halogen atom; and f is an integer of 0 to 2, wherein in a case in which f is 2, two R 4 s are identical or different from each other, and wherein a sum of e and f is no greater than 3, wherein
in the case in which the at least one compound is the second compound, f is 1 or 2, and at least one R 4 represents a hydrogen atom.
13 . A method of treating a semiconductor substrate, the method comprising:
applying a silicon-containing-film-forming composition directly or indirectly on a substrate to form a silicon-containing film; and
removing the silicon-containing film, with a removing liquid comprising an acid, wherein
the silicon-containing-film-forming composition comprises:
at least one compound selected from the group consisting of:
a first compound which comprises a first structural unit comprising a Si—H bond, and a second structural unit represented by formula (2); and
a second compound which comprises the second structural unit represented by the formula (2); and
a solvent,
wherein, n the formula (2), X represents a monovalent organic group having 1 to 20 carbon atoms which comprises a nitrogen atom; e is an integer of 1 to 3, wherein in a case in which e is no less than 2, a plurality of Xs are identical or different from each other; R 4 represents a monovalent organic group having 1 to 20 carbon atoms; or a hydroxy group, a hydrogen atom, or a halogen atom; and f is an integer of 0 to 2, wherein in a case in which f is 2, two R 4 s are identical or different from each other, and wherein a sum of e and f is no greater than 3, wherein
in the case in which the at least one compound is the second compound, f is 1 or 2, and at least one R 4 represents a hydrogen atom.
14 . The method according to claim 13 , which comprises, after the applying:
forming an organic underlayer film directly or indirectly on the silicon-containing film;
forming a resist pattern directly or indirectly on the organic underlayer film; and
etching the organic underlayer film with the resist pattern as a mask.
15 . The method according to claim 13 , wherein the removing liquid comprising an acid is a liquid comprising an acid and water; or a liquid obtained by mixing an acid, hydrogen peroxide, and water.