IP Library › Granted Patent US 12,334,507
Granted Patent B2
US 12,334,507 · App. 17/606,839 · Granted Jun 17, 2025

Solid-state secondary battery

Inventors: Shunpei Yamazaki (Tokyo, JP); Kazutaka Kuriki (Kanagawa, JP); Yumiko Yoneda (Kanagawa, JP); Ryota Tajima (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01M10/0585H01M4/13H01M4/483H01M10/0525H01M10/0562H01M2004/021H01M2300/0071
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Quick Facts
Patent No.
US 12,334,507
App. No.
17/606,839
Granted
Jun 17, 2025
Kind
B2
Abstract

A solid-state secondary battery with high safety is provided. The solid-state secondary battery includes a first film that has a function of releasing and accumulating a lithium ion and is over a negative electrode current collector layer, a second film that has a function of transporting a lithium ion and is over the first film, a third film that has a function of releasing and accumulating a lithium ion and is over the second film, and a positive electrode current collector layer over the third film. The total thickness of the first to third films is the same before and after charging.

Claims (52)

1. A solid-state secondary battery comprising:

a first film that has a function of releasing and accumulating a lithium ion;

a second film that has a function of transporting a lithium ion and is over the first film; and

a third film that has a function of releasing and accumulating a lithium ion and is over the second film,

wherein the first film expands and the third film contracts while a total thickness of the first to third films is maintained in a charge period,

wherein the second film comprises silicon and oxygen,

wherein an atomic ratio between silicon and oxygen (O/Si) in the second film is higher than 0 and lower than 2, and

wherein the oxygen is contained in a largest atomic concentration in the second film and silicon is contained in a second largest atomic concentration in the second film.

2. The solid-state secondary battery according to claim 1 ,

wherein the first film comprises silicon and oxygen, and

wherein a mixture ratio of oxygen to silicon in the first film is lower than a mixture ratio of oxygen to silicon in the second film.

3. The solid-state secondary battery according to claim 1 , wherein a density of the second film is lower than a density of the first film and a density of the third film.

4. A solid-state secondary battery comprising:

a first film that has a function of releasing and accumulating a lithium ion and is over a negative electrode current collector layer;

a second film that has a function of transporting a lithium ion and is over the first film;

a third film that has a function of releasing and accumulating a lithium ion and is over the second film; and

a positive electrode current collector layer over the third film,

wherein a total thickness of the first to third films is the same before and after charging,

wherein the second film comprises silicon and oxygen,

wherein an atomic ratio between silicon and oxygen (O/Si) in the second film is higher than 0 and lower than 2, and

wherein the oxygen is contained in a largest atomic concentration in the second film and silicon is contained in a second largest atomic concentration in the second film.

5. The solid-state secondary battery according to claim 4 , wherein the first film contracts and the third film expands.

6. The solid-state secondary battery according to claim 4 ,

wherein the first film comprises silicon and oxygen, and

wherein a mixture ratio of oxygen to silicon in the first film is lower than a mixture ratio of oxygen to silicon in the second film.

7. The solid-state secondary battery according to claim 4 , wherein a density of the second film is lower than a density of the first film and a density of the third film.

8. A solid-state secondary battery comprising:

a first film that has a function of releasing and accumulating a lithium ion and is over a negative electrode current collector layer;

a second film that has a function of transporting a lithium ion and is over the first film;

a third film that has a function of releasing and accumulating a lithium ion and is over the second film; and

a positive electrode current collector layer over the third film,

wherein a thickness between the negative electrode current collector layer and the positive electrode current collector layer is the same before and after charging,

wherein the second film comprises silicon and oxygen,

wherein an atomic ratio between silicon and oxygen (O/Si) in the second film is higher than 0 and lower than 2, and

wherein the oxygen is contained in a largest atomic concentration in the second film and silicon is contained in a second largest atomic concentration in the second film.

9. The solid-state secondary battery according to claim 8 , wherein the thickness is an average value of a thickness of a region between the negative electrode current collector layer and the positive electrode current collector layer.

10. The solid-state secondary battery according to claim 8 , wherein the first film contracts and the third film expands.

11. The solid-state secondary battery according to claim 8 ,

wherein the first film comprises silicon and oxygen, and

wherein a mixture ratio of oxygen to silicon in the first film is lower than a mixture ratio of oxygen to silicon in the second film.

12. The solid-state secondary battery according to claim 8 , wherein a density of the second film is lower than a density of the first film and a density of the third film.

13. A solid-state secondary battery comprising:

a first film that has a function of releasing and accumulating a lithium ion and is over a positive electrode current collector layer;

a second film that has a function of transporting a lithium ion and is over the first film;

a third film that has a function of releasing and accumulating a lithium ion and is over the second film; and

a negative electrode current collector layer over the third film,

wherein each of the second film and the third film comprises silicon and oxygen,

wherein a mixture ratio of oxygen to silicon in the third film is lower than a mixture ratio of oxygen to silicon in the second film,

wherein a density of the second film is lower than a density of the first film and a density of the third film,

wherein due to charging, the first film contracts and the third film expands,

wherein an atomic ratio between silicon and oxygen (O/Si) in the second film is higher than 0 and lower than 2, and

wherein the oxygen is contained in a largest atomic concentration in the second film and silicon is contained in a second largest atomic concentration in the second film.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 27, 2021
From: YAMAZAKI, SHUNPEI; KURIKI, KAZUTAKA; YONEDA, YUMIKO; TAJIMA, RYOTA
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 057931/0250 →
Priority Claims (1)
JP 2019-087101 · Apr 30, 2019 · national
Continuity (1)
Related Publication 20220216524A1 · Jul 7, 2022
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