Semiconductor device manufacturing method
A method of producing a semiconductor device including: providing a temporary fixing laminate having a supporting substrate; machining a semiconductor member that is temporarily fixed to the supporting substrate; and separating the semiconductor member from the supporting substrate by irradiating the temporary fixing laminate with light from a side of a rear surface of the supporting substrate. A plurality of the irradiation target regions set at the rear surface are sequentially irradiated with light, and each of the irradiation target regions includes a part of the rear surface. The irradiation target regions adjacent to each other partially overlap with each other as viewed from a direction perpendicular to the rear surface, and a region in which the plurality of the irradiation target regions are combined includes the entire rear surface.
1. A method of producing a semiconductor device, the method comprising:
providing a temporary fixing laminate comprising a supporting substrate and a temporary fixing material layer, the supporting substrate comprising a supporting surface and a rear surface opposite to the supporting surface, the temporary fixing material layer being provided on the supporting surface and comprising a curable resin layer comprising at least one outermost surface of the temporary fixing material layer;
temporarily fixing a semiconductor member to the supporting substrate with the temporary fixing material layer interposed therebetween;
machining the semiconductor member temporarily fixed to the supporting substrate; and
separating the machined semiconductor member from the supporting substrate by irradiating the temporary fixing laminate with light from a side of the rear surface,
wherein at least a part of the temporary fixing material layer is a light absorption layer that generates heat by absorbing the light,
a plurality of irradiation target regions set at the rear surface are sequentially irradiated by the light, each of the irradiation target regions includes a part of the rear surface,
the light is incoherent light including an infrared ray,
the irradiation target regions adjacent to each other partially overlap with each other as viewed from a direction perpendicular to the rear surface so that the separation of the machined semiconductor member from the supporting substrate is facilitated, and
a region in which the plurality of the irradiation target regions are combined includes the entire rear surface.
2. The method according to claim 1 , wherein a light source of the incoherent light is a xenon lamp.
3. The method according to claim 1 , wherein the temporary fixing material layer comprises, as the light absorption layer, a metal layer that is a separate layer from the curable resin layer.
4. The method according to claim 1 , wherein the plurality of the irradiation target regions set at the rear surface are sequentially irradiated with the light by rotating the supporting substrate in a state where a light source of the light is fixed.