IP Library Granted Patent US 12,074,038
Granted Patent B2
US 12,074,038 · App. 17/612,783 · Granted Aug 27, 2024

Method of manufacturing passivation film

Inventor: Yosuke Tanimoto (Tokyo, JP)
Assignee: Resonac Corporation
H01L21/568C23C8/28
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Quick Facts
Patent No.
US 12,074,038
App. No.
17/612,783
Granted
Aug 27, 2024
Kind
B2
Abstract

A method of manufacturing a passivation film, which includes a passivation process in which a substrate on the surface of which at least one of germanium and molybdenum is contained is treated with a passivation gas containing an oxygen-containing compound, which is a compound containing an oxygen atom in the molecule, and hydrogen sulfide to form a passivation film containing a sulfur atom on the surface of the substrate. The concentration of the oxygen-containing compound in the passivation gas is from 0.001 mole ppm to less than 75 mole ppm.

Claims (13)

1. A method of manufacturing a passivation film, the method comprising

a passivation process in which a substrate on the surface of which at least one of germanium and molybdenum is contained is treated with a passivation gas containing an oxygen-containing compound, which is a compound containing an oxygen atom in a molecule, and hydrogen sulfide to form a passivation film containing a sulfur atom on the surface of the substrate, wherein

concentration of the oxygen-containing compound in the passivation gas is from 0.001 mole ppm to less than 75 mole ppm.

2. The method of manufacturing a passivation film according to claim 1 , wherein the concentration of the oxygen-containing compound in the passivation gas is from 0.5 mole ppm to 65 mole ppm.

3. The method of manufacturing a passivation film according to claim 1 , wherein the oxygen-containing compound is at least one of oxygen gas and water.

4. The method of manufacturing a passivation film according to claim 1 , wherein the substrate comprises a film containing at least one of germanium and molybdenum on the surface of the substrate.

5. The method of manufacturing a passivation film according to claim 1 , wherein the substrate is treated with the passivation gas under conditions of a temperature of from 20° C. to 1,500° C. and a pressure of from 1 Pa to 101 kPa.

6. The method of manufacturing a passivation film according to claim 2 , wherein the oxygen-containing compound is at least one of oxygen gas and water.

7. The method of manufacturing a passivation film according to claim 2 , wherein the substrate comprises a film containing at least one of germanium and molybdenum on the surface of the substrate.

8. The method of manufacturing a passivation film according to claim 3 , wherein the substrate comprises a film containing at least one of germanium and molybdenum on the surface of the substrate.

9. The method of manufacturing a passivation film according to claim 2 , wherein the substrate is treated with the passivation gas under conditions of a temperature of from 20° C. to 1,500° C. and a pressure of from 1 Pa to 101 kPa.

10. The method of manufacturing a passivation film according to claim 3 , wherein the substrate is treated with the passivation gas under conditions of a temperature of from 20° C. to 1,500° C. and a pressure of from 1 Pa to 101 kPa.

11. The method of manufacturing a passivation film according to claim 4 , wherein the substrate is treated with the passivation gas under conditions of a temperature of from 20° C. to 1,500° C. and a pressure of from 1 Pa to 101 kPa.

Assignments (3)
CHANGE OF ADDRESS Recorded Feb 9, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066547/0677 →
CHANGE OF NAME Recorded Jun 23, 2023
From: SHOWA DENKO K.K.
To: RESONAC CORPORATION
Reel/Frame 064082/0513 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 19, 2021
From: TANIMOTO, YOSUKE
To: SHOWA DENKO K.K.
Reel/Frame 058167/0641 →