Power semiconductor module
There is provided a power semiconductor module with multiple semiconductor chips arranged in parallel on an insulated substrate, allowing for high density mounting of semiconductor chips and highly reliable with less difference in operating characteristics from one semiconductor chip to another. The above module includes an insulated substrate; a first conductive pattern laid out on the insulated substrate; multiple power semiconductor chips arranged on the first conductive pattern; a first wiring formed to bridge and directly connecting respective gate electrodes of the power semiconductor chips; and a second wiring formed to bridge and directly connecting respective source electrodes of the power semiconductor chips, wherein the first wiring is placed alongside of the second wiring and may be angled within 30 degrees with respect to the second wiring.
1. A power semiconductor module comprising:
an insulated substrate;
a first and a second conductive patterns and laid out on the insulated substrate;
multiple power semiconductor chips arranged on the first and second conductive patterns, wherein each of the multiple power semiconductor chips on the first and second conductive patterns comprises a gate electrode and a source electrode;
a first wiring formed to bridge and directly connecting respective gate electrodes of the multiple power semiconductor chips;
a second wiring formed to bridge and directly connecting respective source electrodes of the multiple power semiconductor chips;
a gate control terminal electrically insulated from the first conductive pattern and situated on a casing; and
a source sense control terminal spaced from the first conductive pattern and situated on the casing,
wherein the first wiring is connected to the gate control terminal, and the second wiring is connected to the source sense control terminal,
wherein the second conductive pattern is connected with the source electrodes of multiple power semiconductor chips on the first conductive pattern by multiple bonding wires,
wherein an angle formed between the first wiring and the second wiring is 30 degrees or less and the first wiring is connected to the gate control terminal without connection to the second conductive pattern on the insulated substrate; and
the second wiring is connected to the source control terminal without connection to the first conductive pattern on the insulated substrate.
2. The power semiconductor module according to claim 1 ,
wherein the multiple power semiconductor chips are arranged in multiple chip groups on the first conductive pattern;
the first wiring of the respective chip groups are connected to a common gate control terminal; and
the second wiring of the respective chip groups are connected to a common source sense control terminal.
3. The power semiconductor module according to claim 1 , further comprising:
a third wiring formed to bridge and directly connecting respective gate electrodes of the multiple power semiconductor chips on the second conductive pattern; and
a fourth wiring formed to bridge and directly connecting respective source electrodes of the multiple power semiconductor chips on the second conductive pattern;
wherein the third wiring is placed alongside of the fourth wiring and is angled within 30 degrees with respect to the fourth wiring.
4. The power semiconductor module according to claim 3 ,
wherein between the first conductive pattern and the second conductive pattern, a third conductive pattern is placed adjacently to the second conductive pattern; and
currents flowing through the first conductive pattern and the second conductive pattern respectively flow in opposite directions.
5. The power semiconductor module according to claim 4 ,
wherein the second conductive pattern is connected with the source electrodes of multiple power semiconductor chips on the first conductive pattern by multiple bonding wires, wherein each of the source electrodes is connected to a source feed point on the second conductive pattern, and has a first slit pattern formed in L shape or I shape to reduce variation in inductances of source current paths between connection points at which the bonding wires connect with the second conductive pattern and a feed point on the second conductive pattern; and
the third conductive pattern is connected with the source electrodes of multiple power semiconductor chips on the second conductive pattern by multiple bonding wires, wherein each of the source electrodes is connected to a source feed point on the third conductive pattern, and has a second slit pattern formed in L shape or I shape to reduce variation in inductances of source current paths between connection points at which the bonding wires connect with the third conductive pattern and a feed point on the third conductive pattern.
6. The power semiconductor module according to claim 5 , wherein the first slit pattern and the second slit pattern are disposed catercorner to each other.
7. The power semiconductor module according to claim 1 , wherein each of the multiple power semiconductor chips has both a current switching function and a reflux function.
8. The power semiconductor module according to claim 1 , wherein each of the multiple power semiconductor chips on the first and second conductive patterns includes a gate electrode pad and a built-in resistor, the built-in resistor having a predefined resistance value to act upon impedances of chip internal paths that occur in the gate electrode pads.
9. The power semiconductor module according to claim 8 , wherein the built-in resistor made of polysilicon.
10. The power semiconductor module according to claim 1 , wherein the multiple power semiconductor chips are SiC power semiconductor chips.