IP Library › Granted Patent US 12,231,098
Granted Patent B2
US 12,231,098 · App. 17/629,759 · Granted Feb 18, 2025

Multi-mode power management apparatus

Inventor: Nadim Khlat (Cugnaux, FR)
Assignee: Qorvo US, Inc.
H03F3/195H03F1/0227H03F3/245H03F3/72H03F2200/102H03F2200/451
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,231,098
App. No.
17/629,759
Granted
Feb 18, 2025
Kind
B2
Abstract

A multi-mode power management apparatus is provided. In embodiments disclosed herein, the multi-mode power management apparatus can be configured to operate in different power management modes across a wide range of modulation bandwidth (e.g., 80 KHz to over 200 MHz). The multi-mode power management apparatus includes a power management integrated circuit (PMIC) and an envelope tracking integrated (ET) circuit (ETIC), which are implemented in separate dies. The PMIC is configured to generate a low-frequency current and a low-frequency voltage. The ETIC is configured to generate a pair of ET voltages. Depending on the power management mode, the multi-mode power management apparatus can selectively output one or more of the ET voltages and the low-frequency voltage to different stages (e.g., driver stage and output stage) of a power amplifier circuit, thus helping to maintain optimal efficiency and linearity of the power amplifier circuit across the wide range of modulation bandwidth.

Claims (64)

1. A multi-mode power management apparatus comprising:

a power management integrated circuit (PMIC) configured to generate a low-frequency current and a low-frequency voltage;

an envelope tracking (ET) integrated circuit (ETIC) comprising:

a first node coupled to the PMIC;

a second node coupled to the first node via a multifunction circuit;

a first voltage circuit configured to generate a first ET voltage based on a first ET target voltage;

a second voltage circuit configured to generate a second ET voltage based on a second ET target voltage; and

a control circuit configured to:

cause the first node and the second node to output one or more of the first ET voltage, the second ET voltage, and the low-frequency voltage; and

cause the first node and the second node to output at least the low-frequency current; and

a multi-stage power amplifier circuit coupled to the first node and the second node and configured to amplify a radio frequency (RF) signal, wherein the first ET target voltage is delayed from the second ET target voltage to accommodate for a temporal delay inside the multi-stage power amplifier circuit.

2. The multi-mode power management apparatus of claim 1 wherein, in a first power management mode, the control circuit is further configured to:

cause the first node to output the first ET voltage and the low-frequency current; and

cause the second node to output the second ET voltage less than or equal to the first ET voltage and an adjusted low-frequency current proportional to the low-frequency current.

3. The multi-mode power management apparatus of claim 1 wherein, in a third power management mode, the control circuit is further configured to cause the first node and the second node to each output the first ET voltage and the low-frequency current.

4. The multi-mode power management apparatus of claim 1 wherein, in a second power management mode, the control circuit is further configured to cause the first node and the second node to each output the second ET voltage and the low-frequency current.

5. The multi-mode power management apparatus of claim 1 wherein, in a fourth power management mode, the control circuit is further configured to cause the first node and the second node to each output the low-frequency voltage and the low-frequency current.

6. The multi-mode power management apparatus of claim 1 , wherein the multi-stage power amplifier circuit comprises a driver stage coupled to the second node and an output stage coupled to the first node, the first ET target voltage is delayed from the second ET target voltage to thereby accommodate for the temporal delay between the driver stage and the output stage.

7. The multi-mode power management apparatus of claim 6 wherein the PMIC comprises:

a multi-level charge pump (MCP) configured to generate the low-frequency voltage based on a battery voltage;

a power inductor configured to induce the low-frequency current based on the low-frequency voltage; and

a controller configured to adjust the low-frequency voltage and the low-frequency current based on a feedback signal.

8. The multi-mode power management apparatus of claim 7 wherein:

the first voltage circuit comprises:

a first voltage amplifier configured to generate a first initial ET voltage at a first coupling node based on the first ET target voltage;

a first offset capacitor having a first capacitance and coupled between the first coupling node and the first node, the first offset capacitor configured to raise the first initial ET voltage by a first offset voltage to generate the first ET voltage; and

a first switch coupled between the first coupling node and a ground;

the second voltage circuit comprises:

a second voltage amplifier configured to generate a second initial ET voltage at a second coupling node based on the second ET target voltage;

a second offset capacitor having a second capacitance smaller than the first capacitance and coupled between the second coupling node and the second node, the second offset capacitor configured to raise the second initial ET voltage by a second offset voltage to generate the second ET voltage; and

a second switch coupled between the second coupling node and the ground; and

the control circuit is coupled to the first voltage amplifier, the second voltage amplifier, the multifunction circuit, the first switch, the second switch, and the controller.

9. The multi-mode power management apparatus of claim 8 wherein the ETIC further comprises:

a supply voltage circuit configured to generate a multi-level supply voltage for one or more of the first voltage amplifier and the second voltage amplifier;

a first voltage equalizer circuit configured to generate the first ET target voltage based on a common ET target voltage; and

a second voltage equalizer circuit configured to generate the second ET target voltage based on the common ET target voltage.

10. The multi-mode power management apparatus of claim 8 wherein, in a first power management mode, the control circuit is further configured to:

activate the first voltage amplifier and the second voltage amplifier to cause the first node and the second node to output the first ET voltage and the second ET voltage, respectively;

control the multifunction circuit to generate an adjusted low-frequency current proportional to the low-frequency current; and

open the first switch and the second switch to cause the first node and the second node to output the low-frequency current and the adjusted low-frequency current, respectively.

11. The multi-mode power management apparatus of claim 10 wherein the control circuit is further configured to:

generate the feedback signal based on a voltage differential across the first offset capacitor; and

control the multifunction circuit based on a voltage differential across the second offset capacitor.

12. The multi-mode power management apparatus of claim 10 wherein the first ET target voltage is delayed from the second ET target voltage based on a determined temporal delay between the driver stage and the output stage of the multi-stage power amplifier circuit.

13. The multi-mode power management apparatus of claim 8 wherein, in a second power management mode, the control circuit is further configured to:

activate the first voltage amplifier and deactivate the second voltage amplifier to cause the first node and the second node to each output the first ET voltage;

control the multifunction circuit to couple the second node to the first node to receive the low-frequency current; and

open the first switch and the second switch to cause the first node and the second node to each output the low-frequency current.

14. The multi-mode power management apparatus of claim 13 wherein the control circuit is further configured to generate the feedback signal based on a voltage differential across the first offset capacitor.

15. The multi-mode power management apparatus of claim 8 wherein, in a second power management mode, the control circuit is further configured to:

deactivate the first voltage amplifier and activate the second voltage amplifier to cause the first node and the second node to each output the second ET voltage;

control the multifunction circuit to couple the second node to the first node to receive the low-frequency current; and

open the first switch and the second switch to cause the first node and the second node to each output the low-frequency current.

16. The multi-mode power management apparatus of claim 15 wherein the control circuit is further configured to generate the feedback signal based on a voltage differential across the first offset capacitor.

17. The multi-mode power management apparatus of claim 8 wherein, in a second power management mode, the control circuit is further configured to:

deactivate the first voltage amplifier and the second voltage amplifier;

control the multifunction circuit to couple the second node to the first node to receive the low-frequency current; and

close the first switch and open the second switch to cause the low-frequency voltage to be modulated across the first offset capacitor.

18. The multi-mode power management apparatus of claim 17 wherein the control circuit is further configured to generate the feedback signal based on a voltage differential across the first offset capacitor.

19. The multi-mode power management apparatus of claim 8 wherein, in a second power management mode, the control circuit is further configured to:

deactivate the first voltage amplifier and the second voltage amplifier;

control the multifunction circuit to couple the second node to the first node to receive the low-frequency current; and

open the first switch and close the second switch to cause the low-frequency voltage to be modulated across the second offset capacitor.

20. The multi-mode power management apparatus of claim 19 wherein the control circuit is further configured to generate the feedback signal based on a voltage differential across the first offset capacitor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2022
From: KHLAT, NADIM
To: QORVO US, INC.
Reel/Frame 058749/0646 →
Continuity (2)
Provisional Application 62878358 · Jul 25, 2019
Related Publication 20220255513A1 · Aug 11, 2022
References Cited (234)
US 6529716B1 · Eidson et al. · 2003 [cited by applicant]
US 6788151B2 · Shvarts et al. · 2004 [cited by applicant]
US 7859338B2 · Bajdechi et al. · 2010 [cited by applicant]
US 8019289B2 · Gorbachov · 2011 [cited by applicant]
US 8290453B2 · Yoshihara · 2012 [cited by applicant]
US 8385859B2 · Hamano · 2013 [cited by applicant]
US 8476976B2 · Wimpenny · 2013 [cited by applicant]
US 8598950B2 · Khesbak · 2013 [cited by applicant]
US 8600321B2 · Nambu et al. · 2013 [cited by applicant]
US 8611402B2 · Chiron · 2013 [cited by applicant]
US 8665016B2 · Chowdhury et al. · 2014 [cited by applicant]
US 8665931B2 · Afsahi et al. · 2014 [cited by applicant]
US 8803603B2 · Wimpenny · 2014 [cited by applicant]
US 8816272B1 · Brown et al. · 2014 [cited by applicant]
US 8816768B2 · Tseng et al. · 2014 [cited by applicant]
US 8818305B1 · Schwent et al. · 2014 [cited by applicant]
US 8921774B1 · Brown et al. · 2014 [cited by applicant]
US 8942651B2 · Jones · 2015 [cited by applicant]
US 8989682B2 · Ripley et al. · 2015 [cited by applicant]
US 9002303B2 · Brobston · 2015 [cited by applicant]
US 9065509B1 · Yan et al. · 2015 [cited by applicant]
US 9197162B2 · Chiron et al. · 2015 [cited by applicant]
US 9197256B2 · Khlat · 2015 [cited by applicant]
US 9246460B2 · Khlat et al. · 2016 [cited by applicant]
US 9247496B2 · Khlat · 2016 [cited by applicant]
US 9270230B2 · Henshaw et al. · 2016 [cited by applicant]
US 9277501B2 · Lorenz et al. · 2016 [cited by applicant]
US 9287829B2 · Nobbe et al. · 2016 [cited by applicant]
US 9288098B2 · Yan et al. · 2016 [cited by applicant]
US 9294043B2 · Ripley et al. · 2016 [cited by applicant]
US 9356760B2 · Larsson et al. · 2016 [cited by applicant]
US 9374005B2 · Rozek et al. · 2016 [cited by applicant]
US 9379667B2 · Khlat et al. · 2016 [cited by applicant]
US 9438172B2 · Cohen · 2016 [cited by applicant]
US 9515621B2 · Hietala et al. · 2016 [cited by applicant]
US 9515622B2 · Nentwig et al. · 2016 [cited by applicant]
US 9516693B2 · Khlat et al. · 2016 [cited by applicant]
US 9560595B2 · Dakshinamurthy et al. · 2017 [cited by applicant]
US 9571152B2 · Ripley et al. · 2017 [cited by applicant]
US 9596110B2 · Jiang et al. · 2017 [cited by applicant]
US 9614476B2 · Khlat · 2017 [cited by applicant]
US 9614477B1 · Rozenblit et al. · 2017 [cited by applicant]
US 9641206B2 · Pratt et al. · 2017 [cited by applicant]
US 9671801B2 · Bhattad et al. · 2017 [cited by applicant]
US 9743357B2 · Tabe · 2017 [cited by applicant]
US 9831834B2 · Balteanu et al. · 2017 [cited by applicant]
US 9831934B2 · Kotecha et al. · 2017 [cited by applicant]
US 9843294B2 · Khlat · 2017 [cited by applicant]
US 9859845B2 · Sarbishaei et al. · 2018 [cited by applicant]
US 9912296B1 · Cheng et al. · 2018 [cited by applicant]
US 9912297B2 · Khlat · 2018 [cited by applicant]
US 9912301B2 · Xue et al. · 2018 [cited by applicant]
US 9941844B2 · Khlat · 2018 [cited by applicant]
US 9948240B2 · Khlat et al. · 2018 [cited by applicant]
US 9954436B2 · Khlat · 2018 [cited by applicant]
US 9960737B1 · Kovac · 2018 [cited by applicant]
US 9974050B2 · Wiser et al. · 2018 [cited by applicant]
US 9991851B1 · Dinur et al. · 2018 [cited by applicant]
US 9991856B2 · Khesbak et al. · 2018 [cited by applicant]
US 9991913B1 · Dinur et al. · 2018 [cited by applicant]
US 10003303B2 · Afsahi et al. · 2018 [cited by applicant]
US 10069470B2 · Khlat et al. · 2018 [cited by applicant]
US 10090809B1 · Khlat · 2018 [cited by applicant]
US 10097145B1 · Khlat · 2018 [cited by examiner]
US 10097387B1 · Wiser et al. · 2018 [cited by applicant]
US 10103926B1 · Khlat · 2018 [cited by applicant]
US 10110169B2 · Khesbak et al. · 2018 [cited by applicant]
US 10141891B2 · Gomez et al. · 2018 [cited by applicant]
US 10158328B2 · Nobbe et al. · 2018 [cited by applicant]
US 10158330B1 · Khlat · 2018 [cited by applicant]
US 10171037B2 · Khlat · 2019 [cited by applicant]
US 10171038B1 · Chen et al. · 2019 [cited by applicant]
US 10181826B2 · Khlat et al. · 2019 [cited by applicant]
US 10204775B2 · Brown et al. · 2019 [cited by applicant]
US 10305429B2 · Choo et al. · 2019 [cited by applicant]
US 10326408B2 · Khlat et al. · 2019 [cited by applicant]
US 10355646B2 · Lee et al. · 2019 [cited by applicant]
US 10361660B2 · Khlat · 2019 [cited by applicant]
US 10382147B2 · Ripley et al. · 2019 [cited by applicant]
US 10396716B2 · Afsahi et al. · 2019 [cited by applicant]
US 10419255B2 · Wiser et al. · 2019 [cited by applicant]
US 10432145B2 · Khlat · 2019 [cited by applicant]
US 10439557B2 · Khlat et al. · 2019 [cited by applicant]
US 10439789B2 · Brunel et al. · 2019 [cited by applicant]
US 10454428B2 · Khesbak et al. · 2019 [cited by applicant]
US 10476437B2 · Nag et al. · 2019 [cited by applicant]
US 11088660B2 · Lin et al. · 2021 [cited by applicant]
US 11152976B2 · Cho et al. · 2021 [cited by applicant]
US 11387789B2 · Khlat et al. · 2022 [cited by applicant]
US 11424719B2 · Khlat et al. · 2022 [cited by applicant]
US 11569783B2 · Nomiyama et al. · 2023 [cited by applicant]
US 20040100323A1 · Khanifer et al. · 2004 [cited by applicant]
US 20090128236A1 · Wilson · 2009 [cited by applicant]
US 20090253389A1 · Ma et al. · 2009 [cited by applicant]
US 20110223875A1 · Hamano · 2011 [cited by applicant]
US 20120142304A1 · Degani et al. · 2012 [cited by applicant]
US 20120146731A1 · Khesbak · 2012 [cited by applicant]
US 20120194274A1 · Fowers et al. · 2012 [cited by applicant]
US 20120302179A1 · Brobston · 2012 [cited by applicant]
US 20120309333A1 · Nambu et al. · 2012 [cited by applicant]
US 20130141159A1 · Strange et al. · 2013 [cited by applicant]
US 20130207731A1 · Balteanu · 2013 [cited by applicant]
US 20130285750A1 · Chowdhury et al. · 2013 [cited by applicant]
US 20140057684A1 · Khlat · 2014 [cited by applicant]
US 20140111279A1 · Brobston · 2014 [cited by applicant]
US 20140218109A1 · Wimpenny · 2014 [cited by applicant]
US 20140273897A1 · Drogi et al. · 2014 [cited by applicant]
US 20140306763A1 · Hong et al. · 2014 [cited by applicant]
US 20140306769A1 · Khlat et al. · 2014 [cited by applicant]
US 20140315504A1 · Sakai et al. · 2014 [cited by applicant]
US 20140354251A1 · Williams · 2014 [cited by applicant]
US 20140361837A1 · Strange et al. · 2014 [cited by applicant]
US 20150009980A1 · Modi et al. · 2015 [cited by applicant]
US 20150091645A1 · Park et al. · 2015 [cited by applicant]
US 20150123628A1 · Bhattad et al. · 2015 [cited by applicant]
US 20150194988A1 · Yan et al. · 2015 [cited by applicant]
US 20150236729A1 · Peng et al. · 2015 [cited by applicant]
US 20160036389A1 · Balteanu et al. · 2016 [cited by applicant]
US 20160050629A1 · Khesbak et al. · 2016 [cited by applicant]
US 20160094185A1 · Shute · 2016 [cited by applicant]
US 20160094186A1 · Cohen · 2016 [cited by applicant]
US 20160099686A1 · Perreault et al. · 2016 [cited by applicant]
US 20160105151A1 · Langer · 2016 [cited by applicant]
US 20160181995A1 · Nentwig et al. · 2016 [cited by applicant]
US 20160204809A1 · Pratt et al. · 2016 [cited by applicant]
US 20160226448A1 · Wimpenny · 2016 [cited by applicant]
US 20160294587A1 · Jiang et al. · 2016 [cited by applicant]
US 20170070199A1 · Anderson et al. · 2017 [cited by applicant]
US 20170077877A1 · Anderson · 2017 [cited by applicant]
US 20170093340A1 · Khesbak · 2017 [cited by applicant]
US 20170207802A1 · Pratt et al. · 2017 [cited by applicant]
US 20170230924A1 · Wolberg et al. · 2017 [cited by applicant]
US 20170279412A1 · Afsahi et al. · 2017 [cited by applicant]
US 20170331433A1 · Khlat · 2017 [cited by applicant]
US 20170353287A1 · Onaka et al. · 2017 [cited by applicant]
US 20180048276A1 · Khlat et al. · 2018 [cited by applicant]
US 20180138862A1 · Balteanu et al. · 2018 [cited by applicant]
US 20180138863A1 · Khlat · 2018 [cited by applicant]
US 20180159476A1 · Balteanu et al. · 2018 [cited by applicant]
US 20180159566A1 · Dinur et al. · 2018 [cited by applicant]
US 20180287564A1 · Afsahi et al. · 2018 [cited by applicant]
US 20180309409A1 · Khlat · 2018 [cited by applicant]
US 20180309414A1 · Khlat et al. · 2018 [cited by applicant]
US 20180316440A1 · Mita · 2018 [cited by applicant]
US 20180358930A1 · Haine · 2018 [cited by applicant]
US 20190036493A1 · Khlat et al. · 2019 [cited by applicant]
US 20190044480A1 · Khlat · 2019 [cited by applicant]
US 20190089310A1 · Khlat et al. · 2019 [cited by applicant]
US 20190109566A1 · Folkmann et al. · 2019 [cited by applicant]
US 20190109613A1 · Khlat et al. · 2019 [cited by applicant]
US 20190181804A1 · Khlat · 2019 [cited by applicant]
US 20190222176A1 · Khlat · 2019 [cited by applicant]
US 20190222178A1 · Khlat et al. · 2019 [cited by applicant]
US 20190222181A1 · Khlat · 2019 [cited by applicant]
US 20190267947A1 · Khlat et al. · 2019 [cited by applicant]
US 20190356285A1 · Khlat et al. · 2019 [cited by applicant]
US 20200036337A1 · Khlat · 2020 [cited by applicant]
US 20200076375A1 · Khlat · 2020 [cited by applicant]
US 20200076376A1 · Khlat · 2020 [cited by applicant]
US 20200127607A1 · Khlat · 2020 [cited by applicant]
US 20200127608A1 · Khlat · 2020 [cited by applicant]
US 20200127609A1 · Khlat · 2020 [cited by applicant]
US 20200127611A1 · Khlat · 2020 [cited by applicant]
US 20200127612A1 · Khlat et al. · 2020 [cited by applicant]
US 20200127625A1 · Khlat · 2020 [cited by applicant]
US 20200127730A1 · Khlat · 2020 [cited by applicant]
US 20200136575A1 · Khlat et al. · 2020 [cited by applicant]
US 20200228063A1 · Khlat · 2020 [cited by applicant]
US 20200266766A1 · Khlat et al. · 2020 [cited by applicant]
US 20200295708A1 · Khlat · 2020 [cited by applicant]
US 20200295710A1 · Khlat · 2020 [cited by applicant]
US 20200295713A1 · Khlat · 2020 [cited by applicant]
US 20200343859A1 · Khlat · 2020 [cited by applicant]
US 20200350878A1 · Drogi et al. · 2020 [cited by applicant]
US 20200382061A1 · Khlat · 2020 [cited by applicant]
US 20200382062A1 · Khlat · 2020 [cited by applicant]
US 20200382074A1 · Khlat · 2020 [cited by applicant]
US 20210006206A1 · Khlat · 2021 [cited by applicant]
US 20210194517A1 · Mirea et al. · 2021 [cited by applicant]
US 20210384869A1 · Khlat · 2021 [cited by applicant]
US 20240014782A1 · Khlat · 2024 [cited by applicant]
EP 3644500A1 · 2020 [cited by applicant]
WO 2018182778A1 · 2018 [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 16/263,368, mailed Dec. 26, 2019, 6 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 16/273,288, mailed Dec. 13, 2019, 8 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 16/263,316, mailed Dec. 23, 2019, 9 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 16/193,513, mailed Mar. 25, 2020, 8 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 16/250,229, mailed Apr. 29, 2020, 7 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 16/267,740, mailed Apr. 30, 2020, 10 pages. [cited by applicant]
Final Office Action for U.S. Appl. No. 16/263,316, mailed May 13, 2020, 10 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 16/278,886, mailed Apr. 29, 2020, 9 pages. [cited by applicant]
Quayle Action for U.S. Appl. No. 16/267,779, mailed May 1, 2020, 8 pages. [cited by applicant]
Final Office Action for U.S. Appl. No. 16/263,368, mailed May 22, 2020, 9 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 16/250,229, mailed Sep. 22, 2020, 7 pages. [cited by applicant]
Quayle Action for U.S. Appl. No. 16/267,740, mailed Oct. 19, 2020, 7 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 16/267,740, mailed Mar. 3, 2021, 8 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 16/263,316, mailed Jul. 17, 2020, 4 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 16/263,316, mailed Nov. 24, 2020, 4 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 16/263,316, mailed Mar. 30, 2021, 7 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 16/270,119, mailed Jun. 18, 2020, 9 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 17/027,963, mailed Aug. 13, 2021, 6 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 16/278,886, mailed Sep. 22, 2020, 8 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 16/250,298, mailed Aug. 20, 2020, 8 pages. [cited by applicant]
Quayle Action for U.S. Appl. No. 16/250,298, mailed Feb. 3, 2021, 5 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 16/250,298, mailed Apr. 15, 2021, 8 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 16/689,236, mailed Mar. 2, 2021, 15 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 16/689,236, mailed Jun. 9, 2021, 7 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 16/263,368, mailed Aug. 7, 2020, 4 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 16/263,368, mailed Dec. 17, 2020, 8 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 16/263,368, mailed Apr. 29, 2021, 7 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 16/508,704, mailed Dec. 30, 2020, 7 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 16/508,768, mailed Oct. 27, 2020, 9 pages. [cited by applicant]
Quayle Action for U.S. Appl. No. 16/514,339, mailed Nov. 19, 2020, 9 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 16/660,900, mailed Feb. 18, 2021, 7 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 16/689,417, mailed Feb. 24, 2021, 7 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 16/669,728, mailed Jun. 3, 2021, 9 pages. [cited by applicant]
Final Office Action for U.S. Appl. No. 17/027,963, mailed Jan. 14, 2022, 4 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 17/027,963, mailed Mar. 30, 2022, 8 pages. [cited by applicant]
Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/669,728, mailed Dec. 8, 2021, 8 pages. [cited by applicant]
International Search Report and Written Opinion for International Patent Application No. PCT/US2020/043067, mailed Nov. 11, 2020, 19 pages. [cited by applicant]
International Search Report and Written Opinion for International Patent Application No. PCT/US2021/052151, mailed Jan. 4, 2022, 16 pages. [cited by applicant]
International Preliminary Report on Patentability for International Patent Application No. PCT/US2021/052151, mailed Oct. 13, 2022, 21 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 17/408,651, mailed Jun. 23, 2023, 8 pages. [cited by applicant]
Final Office Action for U.S. Appl. No. 17/942,472, mailed Jul. 19, 2023, 16 pages. [cited by applicant]
Advisory Action for U.S. Appl. No. 17/942,472, mailed Sep. 15, 2023, 3 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 17/942,472, mailed Oct. 18, 2023, 10 pages. [cited by applicant]
Corrected Notice of Allowability and Response to Rule 312 Communication for U.S. Appl. No. 17/942,472, mailed Nov. 17, 2023, 6 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 17/408,651, mailed Mar. 2, 2023, 13 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 17/942,472, mailed Feb. 16, 2023, 13 pages. [cited by applicant]
Extended European Search Report for European Patent Application No. 22195683.2, mailed Feb. 10, 2023, 12 pages. [cited by applicant]
Quayle Action for U.S. Appl. No. 17/404,587, mailed Jan. 31, 2024, 8 pages. [cited by applicant]
Extended European Search Report for European Patent Application No. 22152966.2, mailed Jun. 23, 2022, 9 pages. [cited by applicant]
Examination Report for European Patent Application No. 20754095.6, mailed Sep. 13, 2024, 7 pages. [cited by applicant]
Examination Report for European Patent Application No. 22152966.2, mailed Sep. 17, 2024, 4 pages. [cited by applicant]