Method of manufacturing display device
A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.
1 . A method of manufacturing a display device, comprising:
disposing a plurality of light-emitting diode chips on a carrier, wherein gaps are between the light-emitting diode chips; and
forming a wavelength conversion film on a top surface and side surfaces of each of the light-emitting diode chips; and
transferring at least one light-emitting diode chip onto a first substrate, wherein the wavelength conversion film is disconnected in the gaps adjacent to the at least one light-emitting diode chip during the transferring.
2 . The method of manufacturing the display device of claim 1 , wherein the step of disposing the plurality of light-emitting diode chips on the carrier comprises:
forming the plurality of light-emitting diode chips on a second substrate;
placing the plurality of light-emitting diode chips with the second substrate upside down and placing on the carrier; and
removing the second substrate from the plurality of light-emitting diode chips.
3 . The method of manufacturing the display device of claim 1 , wherein transferring the at least one light-emitting diode chip onto the first substrate comprises:
absorbing the at least one light-emitting diode chip by at least one transposition head; and
adhering the at least one light-emitting diode chip onto the first substrate.
4 . The method of manufacturing the display device of claim 1 , further comprising disposing a color filter layer over at least one light-emitting diode chip after transferring the at least one light-emitting diode chip onto the first substrate.
5 . The method of manufacturing the display device of claim 4 , wherein the color filter layer further comprises a black matrix between the color resists.
6 . The method of manufacturing the display device of claim 4 , wherein a thickness of the color filter layer is in a range from about 3 μm to about 100 μm.
7 . The method of manufacturing the display device of claim 1 , wherein the wavelength conversion film comprises a plurality of first quantum dots and a plurality of second quantum dots, and a wavelength range of light excited from the first quantum dots are different from a wavelength range of light excited from the second quantum dots.
8 . The method of manufacturing the display device of claim 1 , wherein each of the light-emitting diode chips is a light-emitting diode chip without a sapphire substrate, and a thickness of each of the light-emitting diode chips is in a range from about 5 μm to about 10 μm.
9 . The method of manufacturing the display device of claim 1 , wherein the step of forming the wavelength conversion film on a top surface and side surfaces of each of the light-emitting diode chips is formed by lamination.
10 . The method of manufacturing the display device of claim 9 , wherein the step of forming the wavelength conversion film comprises conformally forming the wavelength conversion film on the top surface and side surfaces of each of the light-emitting diode chips.
11 . The method of manufacturing the display device of claim 1 , wherein the gaps are not completely filled with the wavelength conversion film after the step of forming the wavelength conversion film.
12 . The method of manufacturing the display device of claim 1 , wherein the wavelength conversion film and the light-emitting diode chips have a same outer profile after the step of forming the wavelength conversion film.