Semiconductor structure and method for forming a semiconductor structure
A semiconductor structure is provided. The semiconductor structure includes a plurality of transistors arranged at a front side of a semiconductor substrate and a test structure located at the front side of the semiconductor substrate. Further, the semiconductor structure comprises a first electrically conductive connection extending from the test structure through the semiconductor substrate to a backside test pad arranged at a backside of the semiconductor substrate.
1. A semiconductor structure, comprising:
a plurality of transistors located at a front side of a semiconductor substrate;
a test structure located at the front side of the semiconductor substrate;
a first electrically conductive connection extending from the test structure through the semiconductor substrate to a backside test pad arranged at a backside of the semiconductor substrate.
2. The semiconductor structure according to claim 1 , wherein
the first electrically conductive connection comprises at least a part of a buried line arranged in a trench extending into the semiconductor substrate.
3. The semiconductor structure according to claim 2 , wherein
the first electrically conductive connection comprises a through semiconductor via extending from the backside of the semiconductor substrate to the buried line.
4. The semiconductor structure according to claim 1 , wherein
the first electrically conductive connection comprises a portion located in a front-end-of-line layer located on top of the semiconductor substrate.
5. The semiconductor structure according to claim 1 , wherein
the semiconductor structure is a semiconductor wafer or a semiconductor die.
6. The semiconductor structure according to claim 1 , wherein
the semiconductor structure is a semiconductor wafer and wherein the test structure is located in a kerf region of the semiconductor wafer.
7. The semiconductor structure according to claim 1 , wherein
a maximal dimension of the backside test pad is at most 100 μm and at least 10 μm.
8. The semiconductor structure according to claim 1 , wherein
the test structure comprises at least one element of the group of:
a transistor;
a resistor;
a diode;
a capacitor;
a metal layer; and
a via.
9. The semiconductor structure according to claim 1 , wherein:
the test structure comprises a first terminal and a second terminal, wherein the first electrically conductive connection is connected to the first terminal, wherein a second electrically conductive connection extends from the second terminal to a front side test pad arranged at the front side of the semiconductor substrate.
10. The semiconductor structure according to claim 9 , wherein
a third electrically conductive connection extends from the first terminal to a further front side test pad arranged at the front side of the semiconductor substrate.
11. The semiconductor structure according to claim 9 , wherein
a fourth electrically conductive connection extends from the second terminal through the semiconductor substrate to a further backside test pad arranged at the backside of the semiconductor substrate.
12. The semiconductor structure according to claim 1 , further comprising:
a further test structure arranged at the front side of the semiconductor substrate; and
a second electrically conductive connection extending from the further test structure to a front side test pad arranged at the front side of the semiconductor substrate.
13. The semiconductor structure according to claim 9 , wherein
the second electrically conductive connection comprises a portion located in a front side wiring layer stack formed on the front side of the semiconductor substrate.
14. The semiconductor structure according to claim 9 , wherein
the front side test pad laterally overlaps with the backside test pad.
15. The semiconductor structure according to claim 12 , wherein
a third electrically conductive connection extends from the further test structure to a further front side test pad arranged at the front side of the semiconductor substrate.
16. The semiconductor structure according to claim 10 , wherein
the third electrically conductive connection comprises a portion located in a front side wiring layer stack formed on the front side of the semiconductor substrate.
17. The semiconductor structure according to claim 12 , wherein
the test structure comprises a first terminal and a second terminal, wherein the first electrically conductive connection is connected to the first terminal, wherein
a fourth electrically conductive connection extends from the second terminal of the test structure through the semiconductor substrate to a further backside test pad arranged at the backside of the semiconductor substrate.
18. The semiconductor structure according to claim 11 , wherein
the fourth electrically conductive connection comprises at least a part of a buried line arranged in a trench extending into the semiconductor substrate.
19. The semiconductor structure according to claim 18 , wherein
the fourth electrically conductive connection comprises a through semiconductor via extending from the backside of the semiconductor substrate to the buried line.
20. The semiconductor structure according to claim 11 , wherein
the further front side test pad laterally overlaps with the further backside test pad.
21. The semiconductor structure according to claim 12 , wherein
a wiring layer stack comprises an intermediate layer, wherein the test structure and all backside test pads connected to the test structure are located at a first side of the intermediate layer, and wherein the further test structure and all front side test pads connected to the further test structure are located at a second, opposite side of the intermediate layer.
22. A method for forming a semiconductor structure, comprising:
forming a plurality of transistors located at a front side of a semiconductor substrate, a test structure at the front side of the semiconductor substrate, and a first electrically conductive connection extending from the test structure through the semiconductor substrate to a backside of the semiconductor substrate; and
forming a backside test pad at the backside of the semiconductor substrate electrically connected to the first electrically conductive connection.
23. The method according to claim 22 , wherein
forming the first electrically conductive connection comprises forming a trench extending into the semiconductor substrate and forming a buried line in the trench.
24. An electronic device comprising a semiconductor structure, comprising:
a plurality of transistors located at a front side of a semiconductor substrate;
a test structure located at the front side of the semiconductor substrate;
a first electrically conductive connection extending from the test structure through the semiconductor substrate to a backside test pad arranged at a backside of the semiconductor substrate.