Nitride semiconductor including multi-portion nitride region
According to one embodiment, a nitride semiconductor includes a base body, and a nitride member. The nitride member includes a first nitride region including Al x1 Ga 1-x1 N (0<x1≤1), and a second nitride region including Al x2 Ga 1-x2 N (0≤x2<1, x2<x1). The first nitride region is between the base body and the second nitride region. The first nitride region includes a first portion and a second portion. The second portion is between the first portion and the second nitride region. An oxygen concentration in the first portion is higher than an oxygen concentration in the second portion. The oxygen concentration in the second portion is not more than 1×10 18 /cm 3 . A first thickness of the first portion in a first direction from the first to second nitride regions is thinner than a second thickness of the second portion in the first direction.
1. A nitride semiconductor, comprising:
a base body; and
a nitride member,
the nitride member including,
a first nitride region including Al x1 Ga 1-x1 N (0<x1≤1),
a second nitride region including Al x2 Ga 1-x2 N (0≤x2<1, x2<x1), and
a third nitride region including Al x3 Ga 1-x3 N (0≤x3≤1),
the second nitride region being between the first nitride region and the third nitride region,
the first nitride region being between the base body and the second nitride region,
the first nitride region including a first portion and a second portion,
the second portion being between the first portion and the second nitride region,
an oxygen concentration in the first portion being higher than an oxygen concentration in the second portion,
the oxygen concentration in the second portion being not more than 1×10 18 /cm 3 ,
a first thickness of the first portion in a first direction from the first nitride region to the second nitride region being thinner than a second thickness of the second portion in the first direction.
2. The semiconductor according to claim 1 , wherein the first thickness is not less than 0.8 times the second thickness.
3. The semiconductor according to claim 1 , wherein
the first thickness is not less than 5 nm and not more than 150 nm, and
the second thickness is not less than 50 nm and not more than 300 nm.
4. The semiconductor according to claim 1 , wherein the oxygen concentration in the second portion is not less than 3×10 16 /cm 3 .
5. The semiconductor according to claim 1 , wherein the oxygen concentration in the first portion is more than 1×10 18 /cm 3 and is not more than 3.6×10 20 /cm 3 .
6. The semiconductor according to claim 5 , wherein the oxygen concentration in the first portion is not less than 2.5×10 19 /cm 3 .
7. The semiconductor according to claim 1 , wherein an oxygen concentration in the second nitride region is lower than the oxygen concentration in the second portion.
8. The semiconductor according to claim 7 , wherein the oxygen concentration in the second nitride region is not more than 1×10 17 /cm 3 .
9. The semiconductor according to claim 1 , wherein the first nitride region includes AlN.
10. The semiconductor according to claim 1 , wherein the base body includes silicon.
11. The semiconductor according to claim 1 , wherein
the third nitride region includes a plurality of first regions and a plurality of second regions,
one of the first regions is between one of the second regions and an other one of the second regions in a first direction from the first nitride region to the second nitride region,
the one of the second regions is between the one of the first regions and an other one of the first regions in the first direction,
the first regions include Al y1 Ga 1-y 1N (0<y1≤1), and
the second regions include Al y2 Ga 1-y2 N (0≤y2<y1).
12. The semiconductor according to claim 1 , wherein
an oxygen concentration in the third nitride region is higher than an oxygen concentration in the second nitride region.
13. A nitride semiconductor, comprising:
a base body; and
a nitride member,
the nitride member including,
a first nitride region including Al x1 Ga 1-x1 N (0<x1≤1),
a second nitride region including Al x2 Ga 1-x2 N (0≤x2<1, x2<x1),
a third nitride region including Al x3 Ga 1-x2 N (0≤x3≤1),
the second nitride region being between the first nitride region and the third nitride region,
the first nitride region being between the base body and the second nitride region,
the first nitride region including a first portion and a second portion,
the second portion being between the first portion and the second nitride region,
an oxygen concentration in the first portion being higher than an oxygen concentration in the second portion,
the oxygen concentration in the second portion being not more than 1×10 18 /cm 3 ,
a change rate of the oxygen concentration in the first portion in a first direction from the first nitride region to the second nitride region being higher than a change rate of the oxygen concentration in the second portion in the first direction.
14. The semiconductor according to claim 13 , wherein
the third nitride region includes a plurality of first regions and a plurality of second regions,
one of the first regions is between one of the second regions and an other one of the second regions in a first direction from the first nitride region to the second nitride region,
the one of the second regions is between the one of the first regions and an other one of the first regions in the first direction,
the first regions include Al y1 Ga 1-y 1N (0<y1≤1), and
the second regions include Al y2 Ga 1-y2 N (0≤y2<y1).
15. The semiconductor according to claim 13 , wherein
an oxygen concentration in the third nitride region is higher than an oxygen concentration in the second nitride region.
16. A nitride semiconductor, comprising:
a base body; and
a nitride member,
the nitride member including,
a first nitride region including Al x1 Ga 1-x1 N (0<x1≤1),
a second nitride region including Al x2 Ga 1-x2 N (0≤x2<1, x2<x1),
a fourth nitride region including Al x4 Ga 1-x4 N (0≤x4<1), and
a fifth nitride region including Al x5 Ga 1-x5 N (0<x5≤1, x4<x5),
the fourth nitride region being between the second nitride region and the fifth nitride region,
the first nitride region being between the base body and the second nitride region,
the first nitride region including a first portion and a second portion,
the second portion being between the first portion and the second nitride region,
an oxygen concentration in the first portion being higher than an oxygen concentration in the second portion,
the oxygen concentration in the second portion being not more than 1×10 18 /cm 3 ,
a first thickness of the first portion in a first direction from the first nitride region to the second nitride region being thinner than a second thickness of the second portion in the first direction.
17. A semiconductor device, comprising
the nitride semiconductor according to claim 16 ;
a first electrode;
a second electrode;
a third electrode; and
an insulating member,
a direction from the first electrode to the second electrode being along a second direction crossing a first direction from the first nitride region to the second nitride region,
a position of the third electrode in the second direction being between a position of the first electrode in the second direction and a position of the second electrode in the second direction,
the fourth nitride region including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region,
a direction from the first partial region to the first electrode being along the first direction,
a direction from the second partial region to the second electrode being along the first direction,
the third partial region being located between the first partial region and the second partial region in the second direction,
a direction from the third partial region to the third electrode being along the first direction,
the fourth partial region being between the first partial region and the third partial region in the second direction,
the fifth partial region being between the third partial region and the second partial region in the second direction,
the fifth nitride region including a sixth partial region and a seventh partial region,
a direction from the fourth partial region to the sixth partial region being along the first direction,
a direction from the fifth partial region to the seventh partial region being along the first direction, and
the insulating member being between the nitride member and the third electrode.
18. The semiconductor device according to claim 17 , wherein
the nitride member further includes a third nitride region including Al x3 Ga 1-x3 N (0≤x3 ≤1),
the second nitride region is between the first nitride region and the third nitride region, and
an oxygen concentration in the third nitride region is higher than an oxygen concentration in the second nitride region.
19. The semiconductor according to claim 16 , wherein
the nitride member further includes a third nitride region including Al x3 Ga 1-x3 N (0≤x3 ≤1), and
the second nitride region is between the first nitride region and the third nitride region.
20. The semiconductor according to claim 19 , wherein
the third nitride region includes a plurality of first regions and a plurality of second regions,
one of the first regions is between one of the second regions and an other one of the second regions in a first direction from the first nitride region to the second nitride region,
the one of the second regions is between the one of the first regions and an other one of the first regions in the first direction,
the first regions include Al y1 Ga 1-y 1N (0<y≤1), and
the second regions include Al y2 Ga 1-y2 N (0≤y2<y1).
21. The semiconductor according to claim 19 , wherein
an oxygen concentration in the third nitride region is higher than an oxygen concentration in the second nitride region.
22. A nitride semiconductor, comprising:
a base body; and
a nitride member,
the nitride member including,
a first nitride region including Al x1 Ga 1-x1 N (0<x1≤1),
a second nitride region including Al x2 Ga 1-x2 N (0≤x2<1, x2<x1),
a fourth nitride region including Al x4 Ga 1-x4 N (0≤x4<1), and
a fifth nitride region including Al x5 Ga 1-x5 N (0<x5≤1, x4<x5),
the fourth nitride region is between the second nitride region and the fifth nitride region,
the first nitride region being between the base body and the second nitride region,
the first nitride region including a first portion and a second portion,
the second portion being between the first portion and the second nitride region,
an oxygen concentration in the first portion being higher than an oxygen concentration in the second portion,
the oxygen concentration in the second portion being not more than 1×10 18 /cm 3
a change rate of the oxygen concentration in the first portion in a first direction from the first nitride region to the second nitride region being higher than a change rate of the oxygen concentration in the second portion in the first direction.
23. The semiconductor according to claim 22 , wherein
the nitride member further includes a third nitride region including Al x3 Ga 1-x3 N (0≤x3 ≤1), and
the second nitride region is between the first nitride region and the third nitride region.
24. The semiconductor according to claim 23 , wherein
the third nitride region includes a plurality of first regions and a plurality of second regions,
one of the first regions is between one of the second regions and an other one of the second regions in a first direction from the first nitride region to the second nitride region,
the one of the second regions is between the one of the first regions and an other one of the first regions in the first direction,
the first regions include Al y1 Ga 1-y 1N (0<y1≤1), and
the second regions include Al y2 Ga 1-y2 N (0≤y2<y1).
25. The semiconductor according to claim 20 , wherein
an oxygen concentration in the third nitride region is higher than an oxygen concentration in the second nitride region.
26. A semiconductor device, comprising
the nitride semiconductor according to claim 22 ;
a first electrode;
a second electrode;
a third electrode; and
an insulating member,
a direction from the first electrode to the second electrode being along a second direction crossing a first direction from the first nitride region to the second nitride region,
a position of the third electrode in the second direction being between a position of the first electrode in the second direction and a position of the second electrode in the second direction,
the fourth nitride region including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region,
a direction from the first partial region to the first electrode being along the first direction,
a direction from the second partial region to the second electrode being along the first direction,
the third partial region being located between the first partial region and the second partial region in the second direction,
a direction from the third partial region to the third electrode being along the first direction,
the fourth partial region being between the first partial region and the third partial region in the second direction,
the fifth partial region being between the third partial region and the second partial region in the second direction,
the fifth nitride region including a sixth partial region and a seventh partial region,
a direction from the fourth partial region to the sixth partial region being along the first direction,
a direction from the fifth partial region to the seventh partial region being along the first direction, and
the insulating member being between the nitride member and the third electrode.
27. The semiconductor device according to claim 26 , wherein
the nitride member further includes a third nitride region including Al x3 Ga 1-x3 N (0≤x3 ≤1), and
the second nitride region is between the first nitride region and the third nitride region.
28. The semiconductor device according to claim 27 , wherein
the third nitride region includes a plurality of first regions and a plurality of second regions,
one of the first regions is between one of the second regions and an other one of the second regions in a first direction from the first nitride region to the second nitride region,
the one of the second regions is between the one of the first regions and an other one of the first regions in the first direction,
the first regions include Al y1 Ga 1-y 1N (0<y1≤1), and
the second regions include Al y2 Ga 1-y2 N (0≤y2<y1).
29. The semiconductor device according to claim 27 , wherein
an oxygen concentration in the third nitride region is higher than an oxygen concentration in the second nitride region.