Semiconductor device and method for manufacturing the same
According to one embodiment, a semiconductor device includes a substrate, and a first semiconductor layer including magnesium and Al x1 Ga 1-x1 N. The first semiconductor layer includes first, second, and third regions. The first region is between the substrate and the third region. The second region is between the first and third regions. A first concentration of magnesium in the first region is greater than a third concentration of magnesium in the third region. A second concentration of magnesium in the second region decreases along a first orientation. The first orientation is from the substrate toward the first semiconductor layer. A second change rate of a logarithm of the second concentration with respect to a change of a position along the first orientation is greater than a third change rate of a logarithm of the third concentration with respect to the change of the position along the first orientation.
1. A semiconductor device, comprising:
a substrate; and
a first semiconductor layer including magnesium and Al x1 Ga 1-x1 N (0≤x1<1),
the first semiconductor layer including a first region, a second region, and a third region,
the first region being between the substrate and the third region,
the second region being between the first region and the third region,
a first concentration of magnesium in the first region being greater than a third concentration of magnesium in the third region,
a second concentration of magnesium in the second region decreasing along a first orientation,
the first orientation being from the substrate toward the first semiconductor layer,
a second change rate of a logarithm of the second concentration with respect to a change of a position along the first orientation being greater than a third change rate of a logarithm of the third concentration with respect to the change of the position along the first orientation.
2. The device according to claim 1 , wherein
the third concentration decreases along the first orientation.
3. The device according to claim 1 , wherein
a first change rate of a logarithm of the first concentration with respect to the change of the position along the first orientation is less than the third change rate.
4. The device according to claim 1 , wherein
the third region includes carbon, and the second region does not include carbon, or
a concentration of carbon in the third region is greater than a concentration of carbon in the second region.
5. The device according to claim 4 , wherein
the concentration of carbon in the third region is not less than 3×10 16 /cm 3 and not more than 5×10 17 /cm 3 , and
the concentration of carbon in the second region is not less than 2×10 15 /cm 3 and not more than 2×10 16 /cm 3 .
6. The device according to claim 4 , wherein
the first region does not include carbon, or
a concentration of carbon in the first region is less than the concentration of carbon in the third region.
7. The device according to claim 6 , wherein
the concentration of carbon in the first region is less than the concentration of carbon in the second region.
8. The device according to claim 6 , wherein
the concentration of carbon in the first region is not less than 1×10 14 /cm 3 and not more than 2×10 16 /cm 3 .
9. The device according to claim 1 , wherein
the second change rate is not less than 0.01 and not more than 0.2 in units of (log 10 (1/cm 3 ))/nm.
10. The device according to claim 1 , wherein
the third change rate is not less than 0.0001 and not more than 0.002 in units of (log 10 (1/cm 3 ))/nm.
11. The device according to claim 1 , wherein
a thickness along the first orientation of the third region is not less than 10 nm and not more than 1000 nm.
12. The device according to claim 1 , wherein
a thickness along the first orientation of the second region is not less than 5 nm and not more than 200 nm.
13. The device according to claim 1 , wherein
an average value in the third region of the third concentration is not more than 1/10 of an average value in the first region of the first concentration.
14. The device according to claim 1 , wherein
an average value in the third region of the third concentration is 5×10 16 /cm 3 or less.
15. The device according to claim 1 , wherein
an average value in the first region of the first concentration is not less than 5×10 16 /cm 3 and not more than 5×10 18 /cm 3 .
16. The device according to claim 1 , further comprising:
a third semiconductor layer including a nitride semiconductor including Al,
the third semiconductor layer being between the substrate and the first semiconductor layer.
17. The device according to claim 1 , further comprising:
a second semiconductor layer including Al x2 Ga 1-x2 N (0<x2≤1 and x1<x2),
the first semiconductor layer being between the substrate and the second semiconductor layer.
18. The device according to claim 1 , further comprising:
a first electrode, a second electrode, and a third electrode,
a direction from a portion of the first semiconductor layer toward the first electrode being along the first orientation,
a direction from an other portion of the first semiconductor layer toward the second electrode being along the first orientation,
a second direction from the first electrode toward the second electrode crossing the first orientation,
a position in the second direction of the third electrode being between a position in the second direction of the first electrode and a position in the second direction of the second electrode.
19. A semiconductor device, comprising:
a substrate; and
a first semiconductor layer including magnesium and Al x1 Ga 1-x1 N (0≤x1<1),
the first semiconductor layer including a first region, a second region, and a third region,
the first region being between the substrate and the third region,
the second region being between the first region and the third region,
a first concentration of magnesium in the first region being greater than a third concentration of magnesium in the third region,
a second concentration of magnesium in the second region decreasing along a first orientation,
the first orientation being from the substrate toward the first semiconductor layer,
the third region including carbon, and the second region not including carbon, or
a concentration of carbon in the third region being greater than a concentration of carbon in the second region.
20. The device according to claim 19 , wherein
the third concentration decreases along the first orientation.
21. The device according to claim 19 , wherein
a first change rate of a logarithm of the first concentration with respect to the change of the position along the first orientation is less than a third change rate of a logarithm of the third concentration with respect to the change of the position along the first orientation.
22. The device according to claim 19 , wherein
the concentration of carbon in the third region is not less than 3×10 16 /cm 3 and not more than 5×10 17 /cm 3 , and
the concentration of carbon in the second region is not less than 2×10 15 /cm 3 and not more than 2×10 16 /cm 3 .
23. The device according to claim 19 , wherein
the first region does not include carbon, or
a concentration of carbon in the first region is less than the concentration of carbon in the third region.
24. The device according to claim 23 , wherein
the concentration of carbon in the first region is less than the concentration of carbon in the second region.
25. The device according to claim 23 , wherein
the concentration of carbon in the first region is not less than 1×10 14 /cm 3 and not more than 2×10 16 /cm 3 .
26. The device according to claim 19 , wherein
a second change rate of a logarithm of the second concentration with respect to the change of the position along the first orientation is not less than 0.01 and not more than 0.2 in units of (log 10 (1/cm 3 ))/nm.
27. The device according to claim 19 , wherein
a third change rate of a logarithm of the third concentration with respect to the change of the position along the first orientation rate is not less than 0.0001 and not more than 0.002 in units of (log 10 (1/cm 3 ))/nm.
28. The device according to claim 19 , wherein
a thickness along the first orientation of the third region is not less than 10 nm and not more than 1000 nm.
29. The device according to claim 19 , wherein
a thickness along the first orientation of the second region is not less than 5 nm and not more than 200 nm.
30. The device according to claim 19 , wherein
an average value in the third region of the third concentration is not more than 1/10 of an average value in the first region of the first concentration.
31. The device according to claim 19 , wherein
an average value in the third region of the third concentration is 5×10 16 /cm 3 or less.
32. The device according to claim 19 , wherein
an average value in the first region of the first concentration is not less than 5×10 16 /cm 3 and not more than 5×10 18 /cm 3 .
33. The device according to claim 19 , further comprising:
a third semiconductor layer including a nitride semiconductor including Al,
the third semiconductor layer being between the substrate and the first semiconductor layer.
34. The device according to claim 19 , further comprising:
a second semiconductor layer including Al x2 Ga 1-x2 N (0<x2≤1 and x1<x2),
the first semiconductor layer being between the substrate and the second semiconductor layer.
35. The device according to claim 19 , further comprising:
a first electrode, a second electrode, and a third electrode,
a direction from a portion of the first semiconductor layer toward the first electrode being along the first orientation,
a direction from an other portion of the first semiconductor layer toward the second electrode being along the first orientation,
a second direction from the first electrode toward the second electrode crossing the first orientation,
a position in the second direction of the third electrode being between a position in the second direction of the first electrode and a position in the second direction of the second electrode.