GaN vertical trench MOSFETs and methods of manufacturing the same
View Patent ↗GaN vertical trench MOSFETs and methods of manufacturing the same are disclosed. One example embodiment is a vertical trench MOSFET. The MOSFET includes a semiconductor transistor that has a first surface and a second surface, and a trench that extends from the first surface into the semiconductor transistor along a first direction perpendicular to the first and second surfaces. The semiconductor transistor includes a body region having a channel region arranged along the first direction along at least a portion of a wall of the trench. The doping concentration of the channel region is non-uniform. As a non-limiting example, two-step doping is conducted for forming asymmetric or non-uniform channel of a GaN vertical trench MOSFET. In some embodiments, multiple-step doping other than the two-step doing (such as doping in three steps, four steps, or more), linearly scaled doping, other proper asymmetric doping can be used.
1. A GaN vertical trench MOSFET comprising a semiconductor transistor that has a first surface and a second surface, and a trench that extends from the first surface into the semiconductor transistor along a first direction perpendicular to the first and second surfaces, wherein the semiconductor transistor includes a body region having a channel region arranged along the first direction along at least a portion of a wall of the trench, and wherein a doping concentration of the channel region is non-uniform,
wherein the channel region includes a first portion and a second portion having an interface with the first portion, the interface being in parallel with the first and second surfaces, the doping concentration of the first portion being uniform across the first portion, the doping concentration of the second portion being uniform across the second portion, the doping concentration of the second portion being greater than the doping concentration of the first portion,
wherein the semiconductor transistor comprises a source region, and the source region is disposed on the body region and comprises the first surface,
wherein the second portion is sandwiched between the source region and the first portion,
wherein the first portion and the second portion are doped with a same type of dopants.
2. The GaN vertical trench MOSFET of claim 1 , wherein the doping concentration of the channel region varies along the first direction.
3. The GaN vertical trench MOSFET of claim 1 , wherein the channel region is doped with Mg having a doping concentration not less than 1E17 cm −3 .
4. A GaN vertical trench MOSFET comprising:
a semiconductor transistor, the semiconductor transistor having a first surface and a second surface and comprising:
a base comprising the second surface;
a first epilayer of a first conductivity type that is disposed on the base and has a first doping concentration;
a second epilayer of the first conductivity type that is disposed on the first epilayer and has a second doping concentration, the first doping concentration being greater than the second doping concentration;
a body region of a second conductivity type that is disposed on the second epilayer, the second conductivity type being opposite to the first conductivity type; and
a source region that is disposed on the body region and comprises the first surface; and
a trench that extends through the source region and the body region and into the second epilayer, the trench extending from the first surface into the semiconductor transistor along a first direction perpendicular to the first and second surface,
wherein each of the first epilayer, the second epilayer, the body region, and the source region includes GaN,
wherein the body region has a channel region arranged along the first direction along at least a portion of a wall of the trench, the channel region comprising a plurality of channel portions, and wherein a doping concentration of the channel region is non-uniform,
wherein the body region has a varying doping concentration such that two or more channel portions are formed in the body region with different electrical parameters,
wherein the channel region includes a first portion and a second portion having an interface with the first portion, the interface being in parallel with the first and second surfaces, the doping concentration of the first portion being uniform across the first portion, the doping concentration of the second portion being uniform across the second portion, the doping concentration of the second portion being greater than the doping concentration of the first portion,
wherein the second portion is sandwiched between the source region and the first portion,
wherein the first portion and the second portion are doped with a same type of dopants.
5. The GaN vertical trench MOSFET of claim 4 , wherein the electrical parameters include one or more of maximum drain current, specific ON-resistance, and threshold voltage.
6. The GaN vertical trench MOSFET of claim 4 , wherein the doping concentration of the body region decreases along a direction from the source region towards the base.
7. The GaN vertical trench MOSFET of claim 4 , wherein the doping concentration of the body region varies in a non-linear manner along a direction from the source region towards the base.
8. The GaN vertical trench MOSFET of claim 4 , wherein the doping concentration of the body region is not less than 1E17 cm −3 .
9. The GaN vertical trench MOSFET of claim 4 , wherein the body region is doped with Mg having a doping concentration not less than 1E17 cm −3 .
10. The GaN vertical trench MOSFET of claim 4 , wherein the base includes a substrate and a buffer layer, the substrate including one or more of GaN, Si, Sapphire, and SiC, the buffer layer being disposed on the substrate and including GaN.
11. The GaN vertical trench MOSFET of claim 4 , wherein the first conductivity type is n-type and the second conductivity type is p-type.
12. A hexagonal vertical MOSFET structure comprising a plurality of cells with each cell including a GaN vertical trench MOSFET according to claim 1 .
13. The hexagonal vertical MOSFET structure of claim 12 , wherein the plurality of cells are connected in parallel, and wherein a distance between centers of neighboring cells is in a range from 1 μm to 100 μm.