IP Library Granted Patent US 12,237,312
Granted Patent B2
US 12,237,312 · App. 17/654,317 · Granted Feb 25, 2025

Light-emitting diode packaging module

Inventors: Shuning Xin (Xiamen, CN); Chen-Ke Hsu (Xiamen, CN); Aihua Cao (Xiamen, CN); Junpeng Shi (Xiamen, FJ); Weng-Tack Wong (Xiamen, CN); Yanqiu Liao (Xiamen, CN); Zhen-Duan Lin (Xiamen, CN); Changchin Yu (Xiamen, CN); Chi-Wei Liao (Xiamen, CN); Zheng Wu (Xiamen, CN); Chia-En Lee (Xiamen, CN)
Assignee: QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD.
H01L25/0753H01L33/382H01L33/56H01L33/62
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Quick Facts
Patent No.
US 12,237,312
App. No.
17/654,317
Granted
Feb 25, 2025
Kind
B2
Abstract

A light-emitting diode (LED) packaging module includes a plurality of LED chips spaced apart from one another, an encapsulating layer that fills in a space among the LED chips, a light-transmitting layer disposed on the encapsulating layer, a wiring assembly disposed on and electrically connected to the LED chips, and an insulation component that covers the encapsulating layer and the wiring assembly. Each of the LED chips includes an electrode assembly including first and second electrodes. The light-transmitting layer includes a light-transmitting layer that has a light transmittance greater than that of the encapsulating layer.

Claims (41)

1. A light-emitting diode (LED) packaging module, comprising:

a plurality of LED chips that are spaced-apart from one another, each of said LED chips including:

a chip first surface as a light-exiting surface;

a chip second surface opposite to said chip first surface of said each of said LED chips;

a chip side surface that connects said chip first surface of said each of said LED chips and said chip second surface of said each of said LED chips; and

an electrode assembly disposed on said chip second surface of said each of said LED chips, said electrode assembly including a first electrode and a second electrode;

an encapsulating layer that covers said chip side surface of each of said LED chips and fills in a space among said LED chips, and that exposes said first electrode, said second electrode, and at least a portion of said chip first surface of each of said LED chips, said encapsulating layer being a colored layer;

a light-transmitting layer that is disposed on said encapsulating layer, that covers the portion of said chip first surface of each of said LED chips exposed from said encapsulating layer, and that has a light transmittance greater than that of said encapsulating layer;

a wiring assembly that is disposed on said chip second surface of each of said LED chips, that has a first wiring assembly surface connected to said electrode assembly of each of said LED chips, a second wiring assembly surface opposite to said first wiring assembly surface, and a side wiring assembly surface that is connected to said first wiring assembly surface and said second wiring assembly surface; and

an insulation component that covers said encapsulating layer and said wiring assembly,

wherein said LED chips are formed into a plurality of light-emitting units, each of said light-emitting units including at least three of said LED chips,

wherein said light-emitting units are arranged in an array having m row(s) and n column(s), m and n each independently representing a positive integer, and

wherein adjacent two of said light-emitting units are spaced apart from one another by a distance that is not greater than 1 mm.

2. The LED packaging module as claimed in claim 1 , wherein said encapsulating layer has a light transmittance that is not greater than 50%.

3. The LED packaging module as claimed in claim 1 , wherein said wiring assembly has a thickness ranging from 20 μm to 200 μm.

4. The LED packaging module as claimed in claim 1 , wherein said encapsulating layer includes light-absorbing particles.

5. The LED packaging module as claimed in claim 1 , wherein said light-transmitting layer has a light transmittance that ranges from 40% to 80%.

6. The LED packaging module as claimed in claim 1 , wherein said light-transmitting layer has a light transmittance that is not less than 70%.

7. The LED packaging module as claimed in claim 1 , wherein said light-transmitting layer has a thickness that ranges from 5 μm to 20 μm.

8. The LED packaging module as claimed in claim 1 , wherein said light-transmitting layer is a light-scattering layer.

9. The LED packaging module as claimed in claim 1 , wherein said wiring assembly includes a via layer which has a thickness that ranges from 20 μm to 50 μm.

10. The LED packaging module as claimed in claim 9 , wherein said wiring assembly includes a metallic material having a melting point higher than 400° C.

11. The LED packaging module as claimed in claim 1 , wherein, in each of said light-emitting units, a maximum height difference among said chip first surfaces of said LED chips is not greater than 10 μm.

12. The LED packaging module as claimed in claim 1 , wherein said insulation component is made of a material the same as that of said encapsulating layer.

13. A light-emitting diode (LED) packaging module, comprising:

a plurality of LED chips that are spaced-apart from one another, each of said LED chips including:

a chip first surface as a light-exiting surface;

a chip second surface opposite to said chip first surface of said each of said LED chips;

a chip side surface that connects said chip first surface of said each of said LED chips and said chip second surface of said each of said LED chips; and

an electrode assembly disposed on said chip second surface of said each of said LED chips, said electrode assembly including a first electrode and a second electrode;

an encapsulating layer that covers said chip side surface of each of said LED chips and fills in a space among said LED chips, and that exposes said first electrode, said second electrode, and at least a portion of said chip first surface of each of said LED chips, said encapsulating layer being a colored layer;

a light-transmitting layer that is disposed on said encapsulating layer, that covers the portion of said chip first surface of each of said LED chips exposed from said encapsulating layer, and that has a light transmittance greater than that of said encapsulating layer;

a wiring assembly that is disposed on said chip second surface of each of said LED chips, that has a first wiring assembly surface connected to said electrode assembly of each of said LED chips, a second wiring assembly surface opposite to said first wiring assembly surface, and a side wiring assembly surface that is connected to said first wiring assembly surface and said second wiring assembly surface; and

an insulation component that covers said encapsulating layer and said wiring assembly,

wherein said insulation component has a plurality of insulation layers, at least one of said insulation layers having a light transmittance that is greater than that of said encapsulating layer.

14. The LED packaging module as claimed in claim 13 , wherein at least one of said insulation layers is free of microparticles.

15. The LED packaging module as claimed in claim 13 , wherein at least one of said insulation layers is made from a photosensitive material.

16. The LED packaging module as claimed in claim 1 , wherein said wiring assembly includes a plurality of interconnecting layers, an amount of said interconnecting layers being not greater than 3.

17. The LED packaging module as claimed in claim 16 , wherein at least one of said interconnecting layers has a thickness not greater than 50 μm.

18. The LED packaging module as claimed in claim 1 , wherein adjacent two of said LED chips in each of said light-emitting units are spaced apart by a distance that is not greater than 100 μm.

19. The LED packaging module as claimed in claim 1 , wherein said LED packaging module has a thickness ranging from 100 μm to 500 μm.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 20, 2026
From: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY CO., LTD.
To: HUBEI SANAN OPTOELECTRONICS CO.,LTD.
Reel/Frame 075700/0052 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 11, 2022
From: XIN, SHUNING; HSU, CHEN-KE; CAO, AIHUA; SHI, JUNPENG; WONG, WENG-TACK; LIAO, YANQIU; LIN, ZHEN-DUAN; YU, CHANGCHIN; LIAO, CHI-WEI; WU, ZHENG; LEE, CHIA-EN
To: QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD.
Reel/Frame 059233/0625 →
Priority Claims (2)
CN 201921553483.2 · Sep 18, 2019 · national
CN 201921553484.7 · Sep 18, 2019 · national
Continuity (2)
Continuation In Part PCTCN2020098503 · Jun 28, 2020
Related Publication 20220199590A1 · Jun 23, 2022
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