Metal-dielectric bonding method and structure

1. A metal-dielectric bonding method, comprising:

providing a first semiconductor structure including:

a first semiconductor layer comprising a complementary metal-oxide-semiconductor device, and

a first metal layer over the first semiconductor layer and having a metal bonding surface facing away from the first semiconductor layer;

planarizing the metal bonding surface;

applying a plasma treatment on the metal bonding surface;

providing a second semiconductor structure including:

a second semiconductor layer comprising a pixel wafer, and

a second dielectric layer on the second semiconductor layer, the second dielectric layer having a dielectric bonding surface facing away from the second semiconductor layer;

planarizing the dielectric bonding surface;

applying a plasma treatment on the dielectric bonding surface; and

bonding the first semiconductor structure with the second semiconductor structure by bonding the metal bonding surface with the dielectric bonding surface, wherein one of the metal bonding surface and the dielectric bonding surface entirely covers other of the metal bonding surface and the dielectric bonding surface.

2. The bonding method according to claim 1 , before bonding the first semiconductor structure with the second semiconductor structure, further comprising:

cleaning the metal bonding surface; and

cleaning the dielectric bonding surface.

3. The bonding method according to claim 2 , wherein:

cleaning the metal bonding surface includes using deionized water to clean the metal bonding surface.

4. The bonding method according to claim 2 , wherein:

cleaning the metal bonding surface includes using a hydrophilic chemical substance to clean the metal bonding surface.

5. The bonding method according to claim 4 , wherein:

the hydrophilic chemical substance is ammonia solution or a weak acid.

6. The bonding method according to claim 5 , wherein:

the weak acid includes hydrofluoric acid, benzoic acid, Acetic acid, propanoic acid, or acrylic acid.

7. The bonding method according to claim 1 , wherein:

applying the plasma treatment on the metal bonding surface includes treating the metal bonding surface using nitrogen plasma, oxygen plasma, argon plasma, or argon-hydrogen plasma.

8. The bonding method according to claim 1 , wherein bonding the first semiconductor structure with the second semiconductor structure includes:

forming a bonding interface between the first semiconductor structure and the second semiconductor structure.

9. The bonding method according to claim 1 , wherein bonding the first semiconductor structure with the second semiconductor structure includes:

bonding the first semiconductor structure with the second semiconductor structure at room temperature ranging from approximately 15° C. to approximately 30 ºC.

10. The bonding method according to claim 1 , wherein bonding the first semiconductor structure with the second semiconductor structure includes:

bonding the first semiconductor structure with the second semiconductor structure at a temperature above 0° C. and below approximately 15° C. or a temperature in a range from approximately 30° C. to approximately 100° C.

11. The bonding method according to claim 1 , wherein planarizing the metal bonding surface includes:

reducing a surface roughness of the metal bonding surface to approximately 0.5 nm or less by a chemical mechanical planarization.

12. The bonding method according to claim 1 , wherein:

the complementary metal-oxide-semiconductor device includes one of a complementary metal-oxide-semiconductor device image sensor or a data convertor.

13. The bonding method according to claim 1 , wherein:

a material of the first metal layer is tantalum, titanium, copper, or a combination thereof.

14. The bonding method according to claim 1 , wherein:

a material of the second dielectric layer includes silicon oxide, silicon oxycarbide, silicon nitride, silicon carbon nitride, or a combination thereof.

15. The bonding method according to claim 1 , after bonding the first semiconductor structure with the second semiconductor structure, further comprising:

annealing the first semiconductor structure and the second semiconductor structure at an annealing temperature in a range from approximately 100° C. to approximately 450° C.

16. The bonding method according to claim 1 , wherein:

the complementary metal-oxide-semiconductor device includes a complementary metal-oxide-semiconductor device image sensor,

the pixel wafer includes a plurality of photosensitive pixels exposed to light for the complementary metal-oxide-semiconductor device image sensor, and

a color filter array disposed to filter the light for the pixel wafer.

17. The bonding method according to claim 1 , wherein:

planarizing the metal bonding surface is performed before applying the plasma treatment on the metal bonding surface; and

planarizing the dielectric bonding surface is performed before applying the plasma treatment on the dielectric bonding surface.

18. The bonding method according to claim 1 , wherein:

the first metal layer is bonded with the second dielectric layer and is associated with the pixel wafer to block electromagnetic radiation related to the pixel wafer, and

the first metal layer is further connected to a heat dissipating apparatus for heat dissipation of the complementary metal-oxide-semiconductor device.

19. The bonding method according to claim 1 , wherein:

the one of the metal bonding surface and the dielectric bonding surface is in direct contact with the other of the metal bonding surface and the dielectric bonding surface.