Semiconductor package and related methods
Implementations of image sensor packages may include an image sensor chip, a first layer including an opening therethrough coupled to a first side of the image sensor chip, and a optically transmissive cover coupled to the first layer. The optically transmissive cover, the first layer, and the image sensor chip may form a cavity within the image sensor. The image sensor package may also include at least one electrical contact coupled to a second side of the image sensor chip opposing the first side and an encapsulant coating an entirety of the sidewalls of the image sensor package.
1. An image sensor package comprising:
an image sensor chip;
a first layer comprising an opening therethrough coupled to a first side of the image sensor chip;
an optically transmissive cover coupled to the first layer, wherein the optically transmissive cover, the first layer, and the image sensor chip comprise a cavity within the image sensor package;
at least one electrical contact coupled to a second side of the image sensor chip opposing the first side; and
an encapsulant coating an entirety of sidewalls of the image sensor package;
wherein a width of the optically transmissive cover is the same as a width of the first side of the image sensor chip.
2. The package of claim 1 , further comprising a redistribution layer covering the second side of the image sensor chip.
3. The package of claim 1 , wherein the encapsulant comprises a solder mask.
4. The package of claim 1 , wherein the at least one electrical contact is a bump.
5. The package of claim 1 , wherein the encapsulant crosses all interfaces on the sidewalls of the package.
6. The package of claim 1 , wherein the encapsulant substantially covers five sides of the package.
7. An image sensor package comprising:
an image sensor chip;
a first layer comprising an opening therethrough coupled to a first side of the image sensor chip;
an optically transmissive cover coupled to the first layer, wherein the optically transmissive cover, the first layer, and the image sensor chip comprise a cavity within the image sensor package;
at least one electrical contact coupled to a second side of the image sensor chip opposing the first side; and
an encapsulant coating an entirety of the sidewalls of the image sensor package;
wherein a width of the optically transmissive cover is the same as a width of the first side of the image sensor chip;
wherein the image sensor package is formed by forming a plurality of trenches through a thickness of the optically transmissive cover;
wherein the image sensor package is formed by filling the plurality of trenches with the encapsulant; and
wherein the image sensor package is formed by subtractively removing the encapsulant in a portion of the plurality of trenches.
8. The package of claim 7 , wherein the encapsulant is a solder mask.
9. The package of claim 7 , wherein subtractively removing comprises one of sawing and etching.
10. The package of claim 7 , wherein the at least one electrical contact extends to an exterior of the image sensor package.
11. The package of claim 7 , wherein the encapsulant substantially covers five sides of the image sensor package.
12. The package of claim 7 , further comprising a redistribution layer covering the second side of the image sensor chip.
13. The package of claim 7 , wherein the at least one electrical contact is a bump.
14. The package of claim 7 , wherein the encapsulant crosses all interfaces on the sidewalls of the package.
15. An image sensor package comprising:
an image sensor chip;
a first layer comprising an opening therethrough coupled to a first side of the image sensor chip;
an optically transmissive cover coupled to the first layer, wherein the optically transmissive cover, the first layer, and the image sensor chip comprise a cavity within the image sensor package;
at least one electrical contact coupled to a second side of the image sensor chip opposing the first side; and
an encapsulant coating an entirety of the sidewalls of the image sensor package;
wherein a width of the optically transmissive cover is the same as a width of the first side of the image sensor chip;
wherein the image sensor package is formed by forming a plurality of trenches entirely through a thickness of the first layer, entirely through a thickness of the optically transmissive cover, and entirely through a wafer comprising the image sensor chip;
wherein the image sensor package is formed by filling the plurality of trenches with the encapsulant; and
wherein the image sensor package is formed by subtractively removing the encapsulant in a portion of the plurality of trenches.
16. The package of claim 15 , wherein the encapsulant comprises a solder mask.
17. The package of claim 15 , wherein the encapsulant substantially covers the image sensor chip on five sides.
18. The package of claim 15 , further comprising a redistribution layer covering the second side of the image sensor chip.
19. The package of claim 15 , wherein the at least one electrical contact is a bump.
20. The package of claim 15 , wherein the first layer is directly coupled to the image sensor chip and to a second electrical contact embedded within the image sensor chip.