Semiconductor packages with die including cavities
Implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; forming an organic material over the first side of the semiconductor substrate and into the plurality of notches; forming a cavity into each of a plurality of semiconductor die included in the semiconductor substrate; applying a backmetal into the cavity in each of the plurality of semiconductor die included in the semiconductor substrate; and singulating the semiconductor substrate through the organic material into a plurality of semiconductor packages.
1. A semiconductor package comprising:
a semiconductor die comprising a first side and a second side opposite the first side;
a cavity extending into the second side of the semiconductor die and only partially through the semiconductor die;
a backmetal coupled within the cavity and directly coupled to an entirety of the second side; and
an organic material coupled over the first side of the semiconductor die and over a plurality of sidewalls of the semiconductor die;
wherein a first portion of the first side directly opposite the cavity is coplanar with a second portion of the first side at an outer edge of the first side.
2. The semiconductor package of claim 1 , wherein the organic material further comprises a die support structure.
3. The semiconductor package of claim 1 , wherein multiple surfaces of the backmetal form multiple outer surfaces of the semiconductor package.
4. The semiconductor package of claim 2 , wherein the organic material comprises a temporary die support structure.
5. The semiconductor package of claim 1 , further comprising one or more electrical contacts exposed through one or more openings in the organic material.
6. The semiconductor package of claim 1 , wherein a thinned portion of the semiconductor die is less than 5 microns thick.
7. A semiconductor package comprising:
a semiconductor die comprising a first side and a second side opposite the first side;
a cavity extending into the second side of the semiconductor die and only partially through the semiconductor die;
a backmetal coupled within the cavity; and
an organic material coupled over the first side of the semiconductor die and over an entirety of each sidewall of a plurality of sidewalls of the semiconductor die;
wherein an outer perimeter of the backmetal is a same size and shape as an outermost perimeter of the semiconductor die; and
wherein an entirety of the first side lies in a same plane and extends to the outermost perimeter of the semiconductor die.
8. The semiconductor package of claim 7 , wherein the organic material is directly coupled to the backmetal.
9. The semiconductor package of claim 7 , wherein the organic material further comprises a die support structure.
10. The semiconductor package of claim 7 , wherein a largest planar surface of the second side of the semiconductor die is within the cavity.
11. The semiconductor package of claim 7 , wherein a thinned portion of the semiconductor die is less than five microns thick.
12. The semiconductor package of claim 7 , further comprising one or more electrical contacts exposed through one or more openings in the organic material.
13. The semiconductor package of claim 7 , further comprising a conductive material coupled within the cavity.