IP Library Granted Patent US 12,107,616
Granted Patent B2
US 12,107,616 · App. 17/661,586 · Granted Oct 1, 2024

High frequency module and communication apparatus

Inventor: Katsunari Nakazawa (Kyoto, JP)
Assignee: MURATA MANUFACTURING CO., LTD.
H04B1/40H03F3/211H03F3/245H04B1/04H04B2001/0408
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Quick Facts
Patent No.
US 12,107,616
App. No.
17/661,586
Granted
Oct 1, 2024
Kind
B2
Abstract

A power amplifier is capable of operating in a first power mode and a second power mode with a gain lower than a gain of the first power mode. The power amplifier is connected to a first common terminal of the first switch. Two or more filters are connected to two or more first selection terminals other than at least one first selection terminal among three or more first selection terminals of the first switch. The at least one first selection terminal of the first switch and at least one second selection terminal of a second switch are connected. The first switch is capable of switching between a first path passing through at least one of the two or more filters and a second path not passing through any of the two or more filters but passing through the at least one first selection terminal.

Claims (34)

1. A high frequency module comprising:

a power amplifier that is configured to operate in a first power mode and a second power mode, a gain of the power amplifier in the second power mode being lower than the gain of the power amplifier in the first power mode;

a first switch that includes a first common terminal and three or more first selection terminals, the power amplifier being connected to the first common terminal;

two or more filters that are connected to corresponding two or more first selection terminals other than at least one first selection terminal among the three or more first selection terminals of the first switch;

a second switch that includes a second common terminal and three or more second selection terminals, the two or more filters being connected to corresponding two or more second selection terminals other than at least one second selection terminal among the three or more second selection terminals; and

an antenna terminal that is connected to the second common terminal,

wherein the at least one first selection terminal of the first switch and the at least one second selection terminal of the second switch are connected, and

wherein the first switch is configured to switch between a first path passing through at least one of the two or more filters and a second path not passing through any of the two or more filters, but passing through the at least one first selection terminal.

2. The high frequency module according to claim 1 , further comprising:

a mounting substrate having a first main face and a second main face that face each other,

wherein the first switch is arranged on the first main face of the mounting substrate,

wherein the second switch is arranged on the second main face of the mounting substrate, and

wherein the first switch and the second switch at least partially overlap when the first switch and the second switch are viewed in a plan view along a thickness direction of the mounting substrate.

3. The high frequency module according to claim 2 , wherein a wiring that connects the at least one first selection terminal to the at least one second selection terminal has a straight line shape along the thickness direction of the mounting substrate.

4. The high frequency module according to claim 1 , further comprising:

a mounting substrate having a first main face and a second main face that face each other; and

an external connection terminal that is arranged on the second main face of the mounting substrate,

wherein the power amplifier is arranged on the first main face of the mounting substrate, and

wherein the first switch and the second switch are arranged on the second main face of the mounting substrate.

5. The high frequency module according to claim 4 , further comprising an integrated circuit (IC) chip that includes the first switch and the second switch.

6. The high frequency module according to claim 5 , wherein the IC chip includes a wiring that connects the at least one first selection terminal to the at least one second selection terminal.

7. The high frequency module according to claim 4 , wherein the first switch and the second switch are adjacent to each other when the first switch and the second switch are viewed in a plan view along a thickness direction of the mounting substrate.

8. The high frequency module according to claim 1 , further comprising:

a controller configured to control the power amplifier,

wherein the first switch and the second switch are controlled in accordance with a control signal from outside of the high frequency module.

9. The high frequency module according to claim 1 , further comprising:

a controller configured to control the power amplifier,

wherein the controller is configured to control the first switch and the second switch.

10. The high frequency module according to claim 9 , wherein the controller is configured to control the power amplifier, the first switch, and the second switch in accordance with a control signal from outside of the high frequency module.

11. The high frequency module according to claim 1 , wherein each of the two or more filters is a duplexer.

12. A communication apparatus comprising:

a signal processing circuit; and

the high frequency module according to claim 1 ,

wherein the power amplifier of the high frequency module is configured to amplify a transmission signal from the signal processing circuit and to output an amplified transmission signal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 2, 2022
From: NAKAZAWA, KATSUNARI
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 059777/0918 →
Priority Claims (1)
JP 2019-223229 · Dec 10, 2019 · national
Continuity (2)
Continuation PCTJP2020031003 · Aug 17, 2020
Related Publication 20220263533A1 · Aug 18, 2022
Cited By (2)
US 12,334,969 US 12,381,591