Gate all around device and method of forming the same
A method includes forming a p-well and an n-well in a substrate. The method further includes forming a stack of interleaving first semiconductor layers and second semiconductor layers over the p-well and the n-well, the first semiconductor layers having a first thickness and the second semiconductor layers having a second thickness different than the first thickness. The method further includes annealing the stack of interleaving semiconductor layers. The method further includes patterning the stack to form fin-shaped structures including a first fin-shaped structure over the n-well and a second fin-shaped structure over the p-well. The method further includes etching to remove the second semiconductor layers from the first and second fin-shaped structures, where the first semiconductor layers have a different thickness within each of the first and second fin-shaped structures after the etching. The method further includes forming a metal gate over the first and second fin-shaped structures.
1. A method, comprising:
forming a p-well and an n-well in a substrate;
forming a stack of interleaving first semiconductor material layers and second semiconductor material layers over the p-well and the n-well, the first semiconductor material layers having a first thickness and the second semiconductor material layers having a second thickness that is different than the first thickness;
annealing the stack of interleaving semiconductor layers;
patterning the stack to form fin-shaped structures including a first fin-shaped structure over the n-well and a second fin-shaped structure over the p-well;
performing an etching process to remove the second semiconductor material layers from the first and second fin-shaped structures, wherein the first semiconductor material layers have a different thickness within each of the first and second fin-shaped structures after the etching process; and
forming a metal gate over the first and second fin-shaped structures.
2. The method of claim 1 , wherein a ratio of the first thickness to the second thickness is about 1.4 to about 1.5.
3. The method of claim 1 , wherein the annealing diffuses first dopants in the n-well into the second material layer formed over the p-well and diffuses second dopants in the p-well into the second material layer formed over the n-well.
4. The method of claim 3 , wherein the first dopants reduce an etching rate of the second material layer formed over the p-well.
5. The method of claim 1 , wherein the performing the etching process further includes etching a portion of the first material layer over the p-well after removing the second material layer over the p-well.
6. The method of claim 1 , wherein the etching process is a global etching process that is performed on the first fin-shaped structure and the second fin-shaped structure at the same time.
7. The method of claim 1 , wherein the forming the p-well further comprises:
performing an ion implantation process to dope the substrate with one of B or BF 4 .
8. A method, comprising:
receiving a substrate including a p-well and an n-well;
forming a stack of semiconductor layers over the substrate including over the p-well and over the n-well, the stack of semiconductor layers including alternating layers of a first semiconductor material and a second semiconductor material;
performing an annealing process to the stack of semiconductor layers to drive dopants from the p-well into the second semiconductor layers that are formed over the p-well;
etching the stack of semiconductor layers to form a first fin-shaped structure over the p-well and a second fin-shaped structure over the n-well; and
removing the second semiconductor layers from the first fin-shaped structure and the second fin-shaped structure, wherein the first semiconductor material layer has a different thickness within each of the first and second fin-shaped structures after removing the second semiconductor layers.
9. The method of claim 8 , wherein the removing the second semiconductor layers further comprises:
removing a first portion of the second semiconductor layer from the first fin-shaped structure and a second portion of the second semiconductor layer from the second fin-shaped structure at the same time, wherein the first portion is removed at a faster rate than the second portion; and
removing a portion of the first semiconductor layer from the first fin-shaped structure.
10. The method of claim 9 , further comprising removing the portion of the first semiconductor layer until it is about 0.5 nm thinner than a first semiconductor layer of the second fin-shaped structure.
11. The method of claim 8 , wherein the performing the annealing process further comprises driving dopants from the n-well into the second semiconductor layers over the n-well.
12. The method of claim 8 , wherein the forming the stack of semiconductor layers further includes:
forming the first semiconductor material layers to a first thickness; and
forming the second semiconductor material layer to a second thickness, wherein the first thickness is larger than the second thickness.
13. The method of claim 12 , where in the first thickness is about 1.4 to about 1.5 times larger than the second thickness.
14. The method of claim 12 , further comprising:
forming three layers of the first semiconductor material.
15. A device, comprising:
a substrate;
a first fin-shaped structure disposed over a first region of the substrate, including a first set of channel layers having a first thickness;
a second fin-shaped structure disposed over a second region of the substrate, including a second set of channel layers having a second thickness, the second thickness being larger than the first thickness; and
a gate structure disposed on first and second fin-shaped structures including around the first and second sets of channel layers.
16. The device of claim 15 , wherein the first region further comprises a p-well disposed in the substrate and under the first fin-shaped structure.
17. The device of claim 15 , wherein the second region further comprises an n-well disposed in the substrate and under the second fin-shaped structure.
18. The device of claim 15 , further comprising:
a distance between a first channel layer and a second channel layer of the second fin-shaped structure, wherein the second thickness is about 1.4 times larger than the distance.
19. The device of claim 18 , wherein the first thickness is less than 1.4 times larger than the distance.
20. The device of claim 15 , wherein the first fin-shaped structure has a same height as the second fin-shaped structure.