Titanium sputtering target, production method therefor, and method for producing titanium-containing thin film
Provided is a titanium sputtering target having a recrystallized structure having an average crystal grain diameter of 1 μm or less. Also provided is a method for producing a titanium sputtering target, the method comprising the steps of: subjecting a cut titanium ingot to large strain processing to provide a processed sheet; subjecting the processed sheet to cold rolling at a rolling ratio of 30% or more to provide a rolled sheet; and subjecting the rolled sheet to a heat treatment at a temperature of 320° C. or less.
1. A method for producing a titanium sputtering target, the method comprising the steps of:
subjecting a cut titanium ingot having a purity of 4N (99.99% by mass) or more to strain processing to provide a processed sheet having a total strain amount of 2 or more;
subjecting the processed sheet to cold rolling at a rolling ratio of 30% or more to provide a rolled sheet; and
subjecting the rolled sheet to a heat treatment at a temperature of 320° C. or less, wherein the titanium sputtering target produced has an average crystal grain diameter of 1 μm or less.
2. The method for producing the titanium sputtering target according to claim 1 , wherein a processing temperature in the strain processing is 500° C. or less.
3. The method for producing the titanium sputtering target according to claim 1 , wherein the strain processing is multidirectional forging.
4. The method for producing the titanium sputtering target according to claim 1 , wherein a rolling ratio in the cold rolling is more than 70%.
5. The method for producing the titanium sputtering target according to claim 1 , wherein a total strain amount of the processed sheet is more than 3.
6. The titanium sputtering target produced using the method according to claim 1 .
7. A method for producing a titanium-containing thin film, the method comprising using the titanium sputtering target according to claim 6 as a sputtering source.
8. The method for producing the titanium sputtering target according to claim 2 , wherein the strain processing is multidirectional forging.
9. The method for producing the titanium sputtering target according to claim 2 , wherein a rolling ratio in the cold rolling is more than 70%.
10. The method for producing the titanium sputtering target according to claim 3 , wherein a rolling ratio in the cold rolling is more than 70%.
11. He method for producing the titanium sputtering target according to claim 8 , wherein a rolling ratio in the cold rolling is more than 70%.
12. The method for producing the titanium sputtering target according to claim 2 , wherein a total strain amount of the processed sheet is more than 3.
13. The method for producing the titanium sputtering target according to claim 3 , wherein a total strain amount of the processed sheet is more than 3.
14. The method for producing the titanium sputtering target according to claim 4 , wherein a total strain amount of the processed sheet is more than 3.
15. The method for producing the titanium sputtering target according to claim 8 , wherein a total strain amount of the processed sheet is more than 3.
16. The method for producing the titanium sputtering target according to claim 9 , wherein a total strain amount of the processed sheet is more than 3.
17. The method for producing the titanium sputtering target according to claim 10 , wherein a total strain amount of the processed sheet is more than 3.
18. The method for producing the titanium sputtering target according to claim 11 , wherein a total strain amount of the processed sheet is more than 3.
19. The method for producing the titanium sputtering target according to claim 1 , wherein the average crystal grain diameter is 0.9 μm or less.
20. The method for producing the titanium sputtering target according to claim 1 , wherein the average crystal grain diameter is from 0.1 μm to 0.8 μm.