Granted Patent B2

US 11,721,755 · App. 17/669,409 · Granted Aug 8, 2023

Inventors: Philipp Steinmann (Durham, NC); Edward Van Brunt (Raleigh, NC); Jae Hyung Park (Apex, NC); Vaishno Dasika (Morrisville, NC)

Assignee: Wolfspeed, Inc.

H01L29/7802H01L29/1608H01L29/7833

Abstract

Claims (50)

1. A method of forming a semiconductor device, comprising:

providing a drift layer on a substrate, the drift layer comprising a surface opposite the substrate;

implanting ions into the drift layer to form a source/drain region in an upper portion of the drift layer that has a first portion that has a first dopant dose and a second portion in the first portion, the second portion having a second dopant dose, different from the first dopant dose;

forming a gate dielectric layer on the drift layer; and

forming a gate electrode on the gate dielectric layer, the gate electrode is entirely above the surface of the drift layer,

wherein a portion of the gate dielectric layer has a bottom surface that is closer to the substrate than a top surface of the first portion of the source/drain region.

2. The method of claim 1 , wherein the first dopant dose is between 1×10 12 dopants/cm 2 to 1×10 15 dopants/cm 2 .

3. The method of claim 1 , wherein the second dopant dose is between 5×10 14 dopants/cm 2 to 5×10 16 dopants/cm 2 .

4. The method of claim 1 , further comprising, prior to implanting ions into the drift layer to form the source/drain region, implanting ions into the drift layer to form a well region having a conductivity type opposite that of the source/drain region.

5. The method of claim 4 , wherein implanting ions into the drift layer to form the well region is performed at a third dopant dose of between 1×10 12 dopants/cm 2 to 1×10 14 dopants/cm 2 .

6. The method of claim 1 , wherein a side boundary of the first portion of the source/drain region is laterally offset from a side boundary of the second portion of the source/drain region by a distance of between 50 Å to 2000 Å.

7. The method of claim 1 , wherein an edge of the gate electrode is laterally separated from an interface between the first portion and the second portion of the source/drain region by 1000 Å to 5000 Å.

8. The method of claim 1 , wherein a thickness of the gate dielectric layer over the first portion of the source/drain region is substantially uniform.

9. The method of claim 1 , wherein forming the gate dielectric layer comprises thermally growing the gate dielectric layer.

10. The method of claim 1 , wherein the gate dielectric layer comprises silicon dioxide.

11. The method of claim 1 , wherein implanting ions into the drift layer to form the source/drain region comprises:

depositing a mask layer on the drift layer; and

patterning and etching the mask layer.

12. The method of claim 11 , wherein patterning and etching the mask layer comprises leaving a first portion of the mask layer present on the drift layer, and

wherein implanting ions into the drift layer to form the source/drain region further comprises implanting ions through the first portion of the mask layer.

13. The method of claim 12 , wherein the first portion of the mask layer has a thickness between 50 Å to 500 Å.

14. The method of claim 1 , wherein the first portion of the source/drain region is underneath the gate electrode, and at least part of the second portion of the source/drain region is not underneath the gate electrode.

15. The method of claim 1 , wherein at least part of the first portion of the source/drain region is underneath the gate electrode, and a bottom surface of the second portion of the source/drain region is closer to the substrate than a bottom surface of the first portion of the source/drain region.

16. A method of forming a semiconductor device, comprising:

providing a silicon carbide (SiC) drift layer on a substrate;

implanting second conductivity type dopant ions into the drift layer to form a well region;

implanting first conductivity type dopant ions into the well region to form a low-concentration source/drain region that has a first peak dopant concentration in an upper portion of the well region;

implanting first conductivity type dopant ions into less than all of an upper portion of the low-concentration source/drain region to convert a portion of the low-concentration source/drain region into a high-concentration source/drain region that has a second peak dopant concentration that exceeds the first peak dopant concentration, the low-concentration source/drain region and the high-concentration source/drain region together comprising a source/drain region;

forming a gate dielectric layer on the drift layer and the source/drain region; and

forming a gate electrode on the gate dielectric layer,

wherein a first portion of the high-concentration source/drain region extends underneath the gate dielectric layer.

17. The method of claim 16 , wherein the second peak dopant concentration exceeds the first peak dopant concentration by at least an order of magnitude.

18. The method of claim 17 , wherein a first portion of the low-concentration source/drain region that extends to a top surface of the source/drain region is underneath the gate electrode.

19. A method of forming a semiconductor device, comprising:

providing a silicon carbide (SiC) semiconductor layer structure comprising a source/drain region, a channel region, and a drift layer;

forming a gate dielectric layer on the SiC semiconductor layer structure; and

forming a gate electrode on the gate dielectric layer,

wherein a first portion of the gate dielectric layer that is in between the gate electrode and the source/drain region has a first thickness,

wherein a second portion of the gate dielectric layer that is in between the gate electrode and the channel region of the SiC semiconductor layer structure has a second thickness, and

wherein the first thickness is within 15% of the second thickness.

20. The method of claim 19 , wherein a first concentration of semiconductor lattice damage induced defects in the first portion of the gate dielectric layer is within 10% of a second concentration of semiconductor lattice damage induced defects in the second portion of the gate dielectric layer.

21. The semiconductor device of claim 20 , wherein the gate dielectric layer further comprises a third portion, different from the second portion, that is on the gate electrode and the source/drain region, and

wherein a third thickness of the third portion is greater than the first thickness of the first portion.

22. The semiconductor device of claim 21 , wherein the source/drain region is a first source/drain region,

wherein the semiconductor layer structure further comprises a second source/drain region, with the drift layer extending in a first direction between the first and second source/drain regions, and

wherein a width of the first portion of the gate dielectric layer in the first direction is greater than a width of the third portion of the gate dielectric layer in the first direction.

23. The semiconductor device of claim 21 , wherein a third concentration of semiconductor lattice damage induced defects in the third portion of the gate dielectric layer varies by greater than 10% from the second concentration of semiconductor lattice damage induced defects in the second portion of the gate dielectric layer.

24. The semiconductor device of claim 19 , wherein the source/drain region comprises a high-concentration region comprising a first dopant concentration and a low-concentration region comprising a second dopant concentration, the first dopant concentration being higher than the second dopant concentration.

25. The semiconductor device of claim 24 , wherein an edge of the gate electrode is laterally separated from an interface between the high-concentration region and the low-concentration region of the source/drain region by 5000 Å or less.

26. The semiconductor device of claim 24 , wherein the first portion of the gate dielectric layer is on the low-concentration region of the source/drain region.

Assignments (10)