Bulk ruthenium chemical mechanical polishing composition
The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic acid, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.
1. A method of removing ruthenium material from a substrate, wherein the substrate comprises the ruthenium material and a second material selected from the group consisting of tetraethylorthosilicate (TEOS), a titanium material, and a combination thereof, and wherein the ruthenium material is applied with a chemical vapor deposition process or a physical vapor deposition process, the method comprising the steps of:
applying a composition to the substrate while polishing the substrate with a polishing pad, thereby removing the ruthenium material and the second material;
removing the ruthenium material at a first rate of removal; and
removing the second material at a second rate of removal, wherein the first rate of removal is greater than the second rate of removal,
the composition comprising:
ammonia, present in an amount of about 0.03 wt % to about 0.05 wt %, based on the total weight of the composition;
an oxygenated halogen compound present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the composition, wherein the oxygenated halogen compound comprises a halogen selected from the group consisting of iodine, bromine, chlorine, and any combinations thereof;
an abrasive;
optionally, an acid;
water; and
less than about 1 wt % of any additional components,
wherein the pH of the polishing composition is between about 6 and 8, and
wherein when the polishing of the substrate with a polishing pad is at a downforce of 1.5 psi and a composition flow rate of 175 mL/min, a ratio of the first rate of removal to the second rate of removal is at least 522/33.
2. The method of claim 1 , wherein the oxygenated halogen compound is hydrogen periodate.
3. The method of claim 1 , wherein the abrasive is silica.
4. The method of claim 1 , wherein the abrasive is present in an amount of about 0.01 wt % to about 12 wt %, based on the total weight of the composition.
5. The method of claim 1 , wherein the acid is selected from the group consisting of a carboxylic acid, an organic sulfonic acid, an organic phosphonic acid, or any combinations thereof.
6. The method of claim 1 , wherein the acid is selected from the group consisting of 1,2-ethanedisulfonic acid, 4-amino-3-hydroxy-1-naphthalenesulfonic acid, 8-hydroxyquinoline-5-sulfonic acid, aminomethanesulfonic acid, benzenesulfonic acid, hydroxylamine O-sulfonic acid, methanesulfonic acid, m-xylene-4-sulfonic acid, poly(4-styrenesulfonic acid), polyanetholesulfonic acid, P-toluenesulfonic acid, and trifluoromethane-sulfonic acid, poly(vinylphosphonic acid), 1-hydroxyethane-1,1-diphosphonic acid, nitrilotri(methylphosphonic acid), diethylenetriaminepentakis (methylphosphonic acid), N,N,N′N′-ethylenediaminetetrakis(methylene phosphonic acid), n-hexylphosphonic acid, benzylphosphonic acid, phenylphosphonic acid, and any combinations thereof.
7. The method of claim 1 , wherein the acid is present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the composition.
8. The method of claim 1 , wherein the composition is substantially free of azoles.
9. The method of claim 1 , wherein the pH of the composition is from 6 to 8.
10. The method of claim 1 , wherein the composition consists of the ammonia, the oxygenated halogen compound, the abrasive, water, and optionally the acid.