IP Library Granted Patent US 12,322,747
Granted Patent B2
US 12,322,747 · App. 17/669,743 · Granted Jun 3, 2025

Light emitting diode device, method for manufacturing the same and a display including the same

Inventors: Xinglong Li (Xiamen, CN); Chen-Ke Hsu (Xiamen, CN); Junpeng Shi (Xiamen, CN); Weng-Tack Wong (Xiamen, CN)
Assignee: QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD.
H01L33/58H01L25/0753H01L33/56H01L33/62H01L2933/005H01L2933/0058H01L2933/0066H01L2933/0091
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Quick Facts
Patent No.
US 12,322,747
App. No.
17/669,743
Granted
Jun 3, 2025
Kind
B2
Abstract

A light emitting diode (LED) device includes at least three LED chips spaced apart from one another, an encapsulation layer and a lens. Each of the LED chips is configured to emit light having a respective one of wavelengths. The LED chips cooperate to have a light emitting region. Each LED chip has a first surface, a second surface opposite to the first surface, and a lateral surface that interconnects the first and second surfaces. The encapsulation layer covers the lateral surface of each of the LED chips, and fills gaps between the LED chips. The lens is disposed on the first surface of each of the LED chips, and covers the light emitting region of the LED chips.

Claims (28)

1. A light emitting diode (LED) device, comprising:

at least three LED chips that are spaced apart from one another, each of said LED chips being configured to emit light having a respective one of wavelengths, said LED chips cooperating to have a light emitting region, each of said LED chips having a first surface, a second surface opposite to said first surface, and a lateral surface interconnecting said first surface and said second surface;

an encapsulation layer that covers said lateral surface of each of said LED chips and that fills gaps between said LED chips; and

a lens that is disposed on said first surface of each of said LED chips and that covers said light emitting region of said LED chips,

wherein said light emitting region of said LED chips has a diameter not greater than 1 mm, and wherein a contact surface between said lens and said encapsulation layer is in an ellipse shape which satisfies a ratio of A to B ranging from 0.4 to 0.9, A≥1.5D, and H>0.5 A,

where A represents a length of a minor axis of said ellipse shape, B represents a length of a major axis of said ellipse shape, D represents said diameter of said light emitting region of said LED chips, and H represents a height of said lens.

2. The LED device of claim 1 , wherein an amount of light passing through said encapsulation layer accounts for less than 30% of a total amount of light emitted by said LED chips.

3. The LED device of claim 1 , wherein said encapsulation layer is made from a material that has a light transmittance not greater than 30%, said material including one of colored silica gel and colored silicone resin.

4. The LED device of claim 1 , wherein an optical axis of said lens is coincident with a centroid of said light emitting region.

5. The LED device of claim 1 , wherein each of said LED chips has a size that is not greater than 380 μm×380 μm.

6. The LED device of claim 1 , wherein two immediately adjacent ones of said LED chips are spaced apart from each other by a distance not greater than 50 μm.

7. The LED device of claim 1 , wherein said LED chips are directly held in position by said encapsulation layer.

8. The LED device of claim 1 , further comprising an electrode that is disposed on said encapsulation layer opposite to said lens.

9. The LED device of claim 8 , further comprising a circuit layer that is disposed adjacent to said second surface of each of said LED chips and that is electrically connected to said electrode.

10. The LED device of claim 9 , wherein said electrode is a surface-mount electrode.

11. The LED device of claim 9 , wherein said circuit layer is disposed within said encapsulation layer.

12. The LED device of claim 9 , further comprising a supporting member that is disposed between said encapsulation layer and said electrode, and that has a via, said circuit layer being electrically connected to said electrode through said via.

13. The LED device of claim 1 , further comprising a light-scattering layer that is disposed between said lens and said LED chips.

14. The LED device of claim 13 , wherein said light-scattering layer is made from one of light-transmissive silica gel and light-transmissive resin, and includes a plurality of light-scattering particles distributed in said one of light-transmissive silica gel and light-transmissive resin.

15. The LED device of claim 1 , wherein said three LED chips are configured to emit red light, green light and blue light, respectively.

16. The LED device of claim 1 , wherein said LED chips are arranged in one of a triangular pattern and a straight line.

17. The LED device of claim 1 , wherein each of said LED chips includes an LED cathode and an LED anode, said LED device further comprising a lead-out structure that is configured to lead out one of said LED cathode and LED anode for each of said LED chips.

18. A light emitting diode (LED) device, comprising:

at least three LED chips that are spaced apart from one another, each of said LED chips being configured to emit light having a respective one of wavelengths, said LED chips cooperating to have a light emitting region, each of said LED chips having a first surface, a second surface opposite to said first surface, and a lateral surface interconnecting said first surface and said second surface;

an encapsulation layer that covers said lateral surface of each of said LED chips and that fills gaps between said LED chips; and

a lens that is disposed on said first surface of each of said LED chips and that covers said light emitting region of said LED chips,

wherein said lens is in a semi-ellipsoid shape, and a contact surface between said lens and said encapsulation layer is in an ellipse shape which has a minor axis and a major axis, a half-value angle in a direction along said minor axis is a, and a half-value angle in a direction along said major axis is β, wherein α<β, and 20°≤α≤70°.

19. A display, comprising at least one LED device as claimed in claim 18 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 20, 2026
From: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY CO., LTD.
To: HUBEI SANAN OPTOELECTRONICS CO.,LTD.
Reel/Frame 075700/0052 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 16, 2022
From: LI, XINGLONG; HSU, CHEN-KE; SHI, JUNPENG; WONG, WENG-TACK
To: QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD.
Reel/Frame 059023/0804 →
Priority Claims (1)
CN 201910738265.4 · Aug 12, 2019 · national
Continuity (2)
Continuation In Part PCTCN2020098498 · Jun 28, 2020
Related Publication 20220165922A1 · May 26, 2022
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