Ternary inverter and method of manufacturing the same
Provided are an inverter including a first source and drain, an interlayer insulating film on the first source, a second source on the interlayer insulating film, a second drain on the first drain, a first channel between the first source and drain, a second channel over the first channel between the second source and drain, a gate insulating film covering outer surfaces of the first and second channel, a part of a surface of the first source in the direction to the first drain, a part of a surface of the second source in the direction to the second drain, a part of a surface of the first drain in the direction to the first source, and a part of a surface of the second drain in the direction to the second source, and a gate electrode between the first source and drain and between the second source and drain.
1. A ternary inverter comprising:
a first source and a first drain apart from each other;
an interlayer insulating film on the first source;
a second source on the interlayer insulating film and a second drain on the first drain;
a first channel positioned between the first source and the first drain and having a 1 st -1 st end surface in a direction to the first source and a 1 st -2 nd end surface in a direction to the first drain, wherein the 1 st -1 st end surface is in contact with the first source, and the 1 st -2 nd end surface is in contact with the first drain;
a second channel disposed over the first channel to be apart from the first channel, positioned between the second source and the second drain, and having a 2 nd -1 st end surface in a direction to the second source and a 2 nd -2 nd end surface in a direction to the second drain, wherein the 2 nd -1 st end surface is in contact with the second source, and the 2 nd -2 nd end surface is in contact with the second drain;
a gate insulating film covering an outer surface of the first channel, an outer surface of the second channel, a part of a surface of the first source in the direction to the first drain, the part other than a portion thereof in contact with the first channel, a part of a surface of the second source in the direction to the second drain, the part other than a portion thereof in contact with the second channel, a part of a surface of the first drain in the direction to the first source, the part other than a portion thereof in contact with the first channel, and a part of a surface of the second drain in the direction to the second source, the part other than a portion thereof in contact with the second channel;
a gate electrode between the first source and the first drain and between the second source and the second drain; and
a constant current forming layer, wherein the first source and the first drain are disposed on the constant current forming layer.
2. The ternary inverter of claim 1 , wherein the first source is doped with a conductivity type which is different from a conductivity type with which the second source is doped.
3. The ternary inverter of claim 2 , wherein the first drain is doped with a conductivity type which is different from a conductivity type with which the first source is doped.
4. The ternary inverter of claim 2 , wherein the first drain is doped with a conductivity type which is different from a conductivity type with which the second drain is doped.
5. The ternary inverter of claim 1 , wherein the gate electrode fills a space between the first channel and the second channel.
6. The ternary inverter of claim 5 , wherein the gate electrode surrounds a first portion of the gate insulating film, the first portion surrounding the first channel, and a second portion of the gate insulating film, the second portion surrounding the second channel.
7. A method of manufacturing a ternary inverter, the method comprising:
forming a gate structure on a substrate, the gate structure extending in a first direction and including a first sacrificial layer, a first channel on the first sacrificial layer, a second sacrificial layer on the first channel, a second channel on the second sacrificial layer, and a third sacrificial layer on the second channel;
forming a dummy gate extending in a second direction intersecting the first direction such that the dummy gate crosses the gate structure;
forming a first source in contact with a 1 st -1 st end surface of the first channel on one side of the dummy gate and forming a first drain in contact with a 1 st -2 nd end surface of the first channel on the other side of the dummy gate;
forming an interlayer insulating film on the first source;
forming a second source in contact with a 2 nd -1 st surface of the second channel on the interlayer insulating film and forming a second drain in contact with a 2 nd -2 nd end surface of the second channel on the first drain;
removing the dummy gate;
removing the first sacrificial layer, the second sacrificial layer, and the third sacrificial layer;
forming a gate insulating film covering an outer surface of the first channel, an outer surface of the second channel, a part of a surface of the first source in a direction to the first drain, the part other than a portion thereof in contact with the first channel, a part of a surface of the second source in a direction to the second drain, the part other than a portion thereof in contact with the second channel, a part of a surface of the first drain in a direction to the first source, the part other than a portion thereof in contact with the first channel, and a part of a surface of the second drain in a direction to the second source, the part other than a portion thereof in contact with the second channel; and
forming a gate electrode between the first source and the first drain and between the second source and the second drain; and
forming a constant current forming layer, wherein the first source and the first drain are disposed on the constant current forming layer.
8. The method of claim 7 , further comprising doping the first source and the first drain with different conductivity types.
9. The method of claim 8 , further comprising doping the second source with a conductivity type different from that of the first source, and doping the second drain with a conductivity type different from that of the first drain.
10. The method of claim 7 , wherein the forming of the gate electrode comprises forming the gate electrode to fill a space where the dummy gate is removed between the first source and the first drain and between the second source and the second drain.
11. The method of claim 7 , wherein the forming of the gate electrode comprises forming the gate electrode to surround a first portion of the gate insulating film, the first portion surrounding the first channel, and a second portion of the gate insulating film, the second portion surrounding the second channel.