Conductive barrier direct hybrid bonding
A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.
1. An element comprising:
a first dielectric layer having an upper surface configured to directly bond to a second dielectric layer of another element;
a first conductive structure formed in a first portion of the first dielectric layer;
a second conductive structure formed in a second portion of the first dielectric layer laterally spaced from the first portion, the second conductive structure having a different lateral dimension from the first conductive structure; and
a barrier layer, a first portion of the barrier layer formed at least on an upper surface of the first conductive structure, the barrier layer recessed below the upper surface of the first dielectric layer.
2. The element of claim 1 , wherein a second portion of the barrier layer is further disposed on the second conductive structure.
3. The element of claim 1 , wherein a lateral dimension of the first conductive structure is greater than the lateral dimension of the second conductive structure.
4. The element of claim 3 , wherein the first conductive structure is a trace and the second conductive structure is a via.
5. The element of claim 1 , wherein the barrier layer has a contact surface configured to contact and directly bond to a conductive material of the other element.
6. The element of claim 1 , wherein the upper surface of the first dielectric layer comprises a polished surface.
7. The element of claim 6 , wherein the polished surface has a surface roughness of 0.1 nm rms to 3 nm rms.
8. The element of claim 1 , wherein the upper surface of the first dielectric layer comprises an activated surface.
9. The element of claim 1 , wherein the barrier layer is further disposed along sides of the first conductive structure.
10. The element of claim 9 , wherein the barrier layer completely surrounds the first conductive structure.
11. A bonded structure comprising:
a first element including a first dielectric layer having a contact surface, a first conductive structure formed in a first portion of the first dielectric layer, and a second conductive structure formed in a second portion of the first dielectric layer laterally spaced from the first portion;
a second element including a second dielectric layer having a contact surface directly bonded to the contact surface of the first dielectric layer, and a third conductive structure formed in a third portion of the second dielectric layer and electrically coupled with the first and second conductive structure; and
a barrier layer disposed at least between the first conductive structure and the third conductive structure.
12. The bonded structure of claim 11 , wherein the barrier layer is in direct contact with the first conductive structure.
13. The bonded structure of claim 11 , wherein the barrier layer is also disposed between the second conductive structure and the third conductive structure.
14. The bonded structure of claim 11 , wherein the third conductive structure comprises a conductive trace.
15. The bonded structure of claim 14 , wherein the first and second conductive structures comprise conductive vias.
16. The bonded structure of claim 11 , wherein the barrier layer comprises a multi-layer structure in which a first barrier layer directly bonded to a second barrier layer.
17. The bonded structure of claim 11 , wherein the first dielectric layer, the second dielectric layer, the first conductive structure, the second conductive structure and the barrier layer form part of a direct hybrid bond.
18. The bonded structure of claim 11 , wherein a lateral dimension of the first conductive structure is greater than a lateral dimension of the second conductive structure.
19. The bonded structure of claim 11 , wherein at least a portion of the barrier layer contact the first dielectric layer.
20. A bonded structure comprising:
a first element including a first dielectric layer having a contact surface, a first conductive structure formed in a first portion of the first dielectric layer, and a barrier layer at least disposed over the first conductive structure, at least a portion of the barrier layer being in contact with the first dielectric layer; and
a second element including a second dielectric layer having a contact surface directly bonded to the contact surface of the first dielectric layer, and a conductive material disposed at least partially in a second portion of the second dielectric layer and directly bonded to the barrier layer.
21. The bonded structure of claim 20 , wherein the conductive material comprises a second conductive feature formed in the second portion of the second dielectric layer.
22. The bonded structure of claim 20 , wherein the conductive material comprises a second barrier layer formed on a second conductive feature formed in the second portion of the second dielectric layer, the second barrier layer directly bonded to the barrier layer of the first element.
23. The bonded structure of claim 22 , wherein the first element further comprising a third conductive structure laterally spaced from the first conductive structure, the third conductive structure electrically connected to the second conductive feature.