Organic thin film transistor and method of manufacturing the same and thin film transistor array panel and electronic device
An organic thin film transistor includes a gate electrode, an organic semiconductor layer overlapped with the gate electrode, a hydrophilic nanolayer on the organic semiconductor layer, and a source electrode and a drain electrode electrically connected to the organic semiconductor layer.
1. A method of manufacturing an organic thin film transistor, the method comprising:
forming a gate electrode,
forming an organic semiconductor layer overlapped with the gate electrode, and
forming a source electrode and a drain electrode electrically connected to the organic semiconductor layer,
wherein the forming of the organic semiconductor layer includes
forming an organic semiconductor thin film,
forming a hydrophilic nanolayer on the organic semiconductor thin film,
forming a protective interlayer on the hydrophilic nanolayer,
performing a photolithography of the protective interlayer, the hydrophilic nanolayer, and the organic semiconductor thin film, and
removing the protective interlayer.
2. The method of claim 1 , wherein
the performing the photolithography of the protective interlayer, the hydrophilic nanolayer, and the organic semiconductor thin film comprises:
applying a photoresist film on the protective interlayer,
disposing a mask on the photoresist film and exposing a portion of the photoresist film,
developing the exposed portion of the photoresist film to form a photoresist pattern,
patterning the protective interlayer, the hydrophilic nanolayer and the organic semiconductor thin film using the photoresist pattern, and
removing the photoresist pattern.
3. The method of claim 2 , wherein the photoresist film comprises a fluorine-containing photoresist.
4. The method of claim 1 , wherein the protective interlayer comprises a material different from that of the hydrophilic nanolayer.
5. The method of claim 4 , wherein the protective interlayer comprises a water-soluble organic compound.
6. The method of claim 5 , wherein
the hydrophilic nanolayer comprises a hydrophilic metal oxide, a hydrophilic low molecular weight compound having a molecular weight of less than or equal to about 3,000, or any combination thereof, and
the hydrophilic metal oxide and the hydrophilic low molecular weight compound are insoluble in water.
7. The method of claim 1 , wherein
the hydrophilic nanolayer is formed by vapor deposition, and
the protective interlayer is formed by a solution process.
8. The method of claim 1 , wherein the removing of the protective interlayer comprises supplying water to the protective interlayer.