Circuit board structure and manufacturing method thereof
A circuit board structure includes a circuit substrate having opposing first and second sides, a redistribution structure disposed at the first side, and a dielectric structure disposed at the second side. The circuit substrate includes a first circuit layer disposed at the first side and a second circuit layer disposed at the second side. The redistribution structure is electrically coupled to the circuit substrate and includes a first leveling dielectric layer covering the first circuit layer, a first thin-film dielectric layer disposed on the first leveling dielectric layer and having a material different from the first leveling dielectric layer, and a first redistributive layer disposed on the first thin-film dielectric layer and penetrating through the first thin-film dielectric layer and the first leveling dielectric layer to be in contact with the first circuit layer. The dielectric structure includes a second leveling dielectric layer disposed below the second circuit layer.
1. A circuit board structure, comprising:
a circuit substrate, having a first side and a second side opposite to each other, and comprising a first circuit layer disposed at the first side and a second circuit layer disposed at the second side;
a redistribution structure, disposed at the first side of the circuit substrate and electrically coupled to the circuit substrate, the redistribution structure comprising:
a first leveling dielectric layer, covering the first circuit layer of the circuit substrate;
a first thin-film dielectric layer, disposed on the first leveling dielectric layer, a material of the first thin-film dielectric layer being different from a material of the first leveling dielectric layer; and
a first redistributive layer, disposed on the first thin-film dielectric layer, wherein the first redistributive layer comprises:
a pad portion disposed on and in direct contact with an upper surface of the first thin-film dielectric layer; and
a via portion disposed between and in direct contact with the pad portion and the first circuit layer, wherein the via portion penetrates through the first thin-film dielectric layer and the first leveling dielectric layer such that the via portion is laterally and directly covered by the first thin-film dielectric layer and the first leveling dielectric layer;
a second redistributive layer, disposed on the pad portion of the first redistributive layer and electrically coupled to the first redistributive layer, a via portion of the second redistributive layer being finer than the via portion of the first redistributive layer; and
a dielectric structure, disposed at the second side of the circuit substrate and comprising a second leveling dielectric layer disposed below the second circuit layer of the circuit substrate.
2. The circuit board structure of claim 1 , wherein the dielectric structure further comprises:
a second thin-film dielectric layer, disposed below the second leveling dielectric layer, a material of the second thin-film dielectric layer being different from a material of the second leveling dielectric layer.
3. The circuit board structure of claim 2 , wherein a maximum thickness of the first thin-film dielectric layer is equal to a maximum thickness of the second thin-film dielectric layer or a difference therebetween is within about ±5%.
4. The circuit board structure of claim 1 , wherein a thickness of the first leveling dielectric layer is greater than a thickness of the first thin-film dielectric layer.
5. The circuit board structure of claim 1 , wherein a line width/spacing of the first redistributive layer of the redistribution structure is finer than a line width/spacing of the first circuit layer of the circuit substrate.
6. The circuit board structure of claim 1 , wherein except for areas where the via portion penetrates through the first thin-film dielectric layer and the first leveling dielectric layer, a bottom surface of the first thin-film dielectric layer is completely and directly attached to a top surface of the first leveling dielectric layer.