IP Library Granted Patent US 12,288,673
Granted Patent B2
US 12,288,673 · App. 17/685,764 · Granted Apr 29, 2025

Retuning for impedance matching network control

Inventors: Anthony Oliveti (San Jose, CA); Daniel Catalan (San Jose, CA); Liang Ouyang (San Jose, CA)
Assignee: COMET TECHNOLOGIES USA, INC.
H01J37/32183C23C14/54H03H7/38H01J2237/332
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Quick Facts
Patent No.
US 12,288,673
App. No.
17/685,764
Granted
Apr 29, 2025
Kind
B2
Abstract

A physical vapor deposition system may include an RF generator configured to transmit an AC process signal to a physical vapor deposition chamber via an RF matching network. A controller of the RF matching network receives the DC magnitude and phase error signals and varies an impedance of the RF matching network in response to the DC magnitude and phase error signals. The matching network operates in a first mode until a tuning dead-zone is determined. Once a tuning dead-zone is determined, the matching network operates in additional modes until the network is tuned. The controller uses a composite value of magnitude and phase error to drive the variable tuning and load capacitors. In some cases, a blended mode (representing multiple tuning algorithms concurrently) may be implemented as a single mode that weights across what would have been multiple modes and thereby tunes the network using a weighted blended mode.

Claims (60)

1. A matching network system, comprising:

an input sensor that, in operation, senses a current value, a voltage value, and a phase value between the current value and the voltage value of an RF input signal;

a controller coupled to the input sensor, the controller programmed to:

determine a phase error value and a magnitude error value;

perform tuning of the matching network, the tuning comprising:

performing a first tuning algorithm wherein:

a first adjustment for a position of a first variable capacitor is determined based on the magnitude error value; and

a second adjustment for a position of a second variable capacitor is determined based on the phase error value;

performing a second tuning algorithm wherein:

a third adjustment for the position of the first variable capacitor is determined based on a first composite value of the magnitude error value and the phase error value; and

a fourth adjustment for the position of the second variable capacitor is determined based on a second composite value of the magnitude error value and the phase error value;

using a blended mode tuning that provides a scaling factor influence to reduce an influence of composite error signals as the matching network converges on a tuning point, the blended mode tuning to apply one or more adjustments by:

applying a first weighting factor to the first adjustment and a second weighting factor to the third adjustment to create a blended first adjustment;

applying a third weighting factor to the second adjustment and a fourth weighting factor to the fourth adjustment to create a blended second adjustment;

adjusting the first variable capacitor based on the blended first adjustment; and

adjusting the second variable capacitor based on the blended second adjustment;

determining whether a dead-zone has occurred; and

if a dead-zone has occurred, then changing at least the first weighting factor and the second weighting factor or the third weighting factor and the fourth weighting factor prior to repeating the using the blended mode tuning to apply one or more adjustments.

2. The matching network system of claim 1 , the tuning further comprising:

performing a third tuning algorithm;

creating the blended first adjustment using a fifth weighting factor based on the third tuning algorithm; and

creating the blended second adjustment using a sixth weighting factor based on the third tuning algorithm.

3. The matching network system of claim 2 , wherein a sum of the first weighting factor plus the second weighting factor plus the fifth weighting factor is equal to 1.

4. The matching network system of claim 2 , wherein a sum of the third weighting factor plus the fourth weighting factor plus the sixth weighting factor is equal to 1.

5. The matching network system of claim 1 , the tuning further comprising:

determining whether the matching network has reached a tuned state based on convergence on the tuning point; and

if the matching network has reached a tuned state, then resetting each of the first weighting factor, the second weighting factor, the third weighting factor, and the fourth weighting factor to a respective initial pre-defined default value.

6. The matching network system of claim 1 , wherein the first weighting factor plus the second weighting factor is equal to 1 and the third weighting factor plus the fourth weighting factor is equal to 1.

7. The matching network system of claim 1 , wherein the scaling factor is based on gamma with gamma representing a reflection coefficient.

8. A radio frequency plasma processing device comprising:

a reaction chamber;

a radio frequency generator to supply radio frequency power to a plasma in the reaction chamber; and

a matching network system comprising:

an input sensor that, in operation, senses a current value, a voltage value, and a phase value between the current value and the voltage value of an RF input signal;

a controller coupled to the input sensor and programmed to:

determine a phase error value and a magnitude error value;

perform tuning of the matching network, the tuning comprising:

performing a first tuning algorithm wherein:

a first adjustment for a position of a first variable capacitor is determined based on the magnitude error value; and

a second adjustment for a position of a second variable capacitor is determined based on the phase error value;

performing a second tuning algorithm wherein:

a third adjustment for the position of the first variable capacitor is determined based on a first composite value of the magnitude error value and the phase error value; and

a fourth adjustment for the position of the second variable capacitor is determined based on a second composite value of the magnitude error value and the phase error value;

using a blended mode tuning that provides a scaling factor influence to reduce an influence of composite error signals as the matching network converges on a tuning point, the blended mode tuning to apply one or more adjustments by:

applying a first weighting factor to the first adjustment and a second weighting factor to the third adjustment to create a blended first adjustment;

applying a third weighting factor to the second adjustment and a fourth weighting factor to the fourth adjustment to create a blended second adjustment;

adjusting the first variable capacitor based on the blended first adjustment; and

adjusting the second variable capacitor based on the blended second adjustment;

determining whether a dead-zone has occurred; and

if a dead-zone has occurred, then changing at least the first weighting factor and the second weighting factor or the third weighting factor and the fourth weighting factor prior to repeating the using the blended mode tuning to apply one or more adjustments.

9. The radio frequency plasma processing device of claim 8 , the tuning further comprising:

performing a third tuning algorithm;

creating the blended first adjustment using a fifth weighting factor based on the third tuning algorithm; and

creating the blended second adjustment using a sixth weighting factor based on the third tuning algorithm.

10. The radio frequency plasma processing device of claim 9 , wherein a sum of the first weighting factor plus the second weighting factor plus the fifth weighting factor is equal to 1.

11. The radio frequency plasma processing device of claim 8 , the tuning further comprising:

determining whether the matching network has reached a tuned state based on convergence on the tuning point; and

if the matching network has reached a tuned state, then resetting each of the first weighting factor, the second weighting factor, the third weighting factor, and the fourth weighting factor to a respective initial pre-defined default value.

12. The radio frequency plasma processing device of claim 8 , wherein the first weighting factor plus the second weighting factor is equal to 1 and the third weighting factor plus the fourth weighting factor is equal to 1.

13. The radio frequency plasma processing device of claim 8 , wherein the scaling factor is based on gamma with gamma representing a reflection coefficient.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 3, 2022
From: OLIVETI, ANTHONY; CATALAN, DANIEL; OUYANG, LIANG
To: COMET TECHNOLOGIES USA, INC.
Reel/Frame 059163/0023 →
Continuity (3)
Continuation In Part 16768224
Provisional Application 62592319 · Nov 29, 2017
Related Publication 20220189740A1 · Jun 16, 2022
References Cited (239)
US 4679007A · Reese et al. · 1987 [cited by applicant]
US 5175472A · Johnson, Jr. et al. · 1992 [cited by applicant]
US 5195045A · Keane et al. · 1993 [cited by applicant]
US 5394061A · Fujii · 1995 [cited by applicant]
US 5474648A · Patrick et al. · 1995 [cited by applicant]
US 5576629A · Turner et al. · 1996 [cited by applicant]
US 5609737A · Fukui et al. · 1997 [cited by applicant]
US 5629653A · Stimson · 1997 [cited by applicant]
US 5737175A · Grosshart et al. · 1998 [cited by applicant]
US 5792261A · Hama et al. · 1998 [cited by applicant]
US 5810963A · Tomioka · 1998 [cited by applicant]
US 5842154A · Harnett et al. · 1998 [cited by applicant]
US 5849136A · Mintz et al. · 1998 [cited by applicant]
US 5866869A · Schneider · 1999 [cited by applicant]
US 5889252A · Williams et al. · 1999 [cited by applicant]
US 5910886A · Coleman · 1999 [cited by applicant]
US 5914974A · Partlo · 1999 [cited by applicant]
US 6016131A · Sato et al. · 2000 [cited by applicant]
US 6157179A · Miermans · 2000 [cited by applicant]
US 6164241A · Chen et al. · 2000 [cited by applicant]
US 6252354B1 · Collins et al. · 2001 [cited by applicant]
US 6313584B1 · Johnson et al. · 2001 [cited by applicant]
US 6313587B1 · MacLennan et al. · 2001 [cited by applicant]
US 6326597B1 · Lubomirsky et al. · 2001 [cited by applicant]
US 6407648B1 · Johnson · 2002 [cited by applicant]
US 6455437B1 · Davidow et al. · 2002 [cited by applicant]
US 6463875B1 · Chen et al. · 2002 [cited by applicant]
US 6507155B1 · Barnes et al. · 2003 [cited by applicant]
US 6677828B1 · Harnett et al. · 2004 [cited by applicant]
US 6703080B2 · Reyzelman · 2004 [cited by applicant]
US 6806437B2 · Oh · 2004 [cited by applicant]
US 6876155B2 · Howald et al. · 2005 [cited by applicant]
US 6894245B2 · Hoffman · 2005 [cited by applicant]
US 6949887B2 · Kirkpatrick et al. · 2005 [cited by applicant]
US 7030335B2 · Hoffman · 2006 [cited by applicant]
US 7042311B1 · Hilliker et al. · 2006 [cited by applicant]
US 7079597B1 · Kenwood · 2006 [cited by applicant]
US 7102292B2 · Parsons et al. · 2006 [cited by applicant]
US 7192505B2 · Roche et al. · 2007 [cited by applicant]
US 7196283B2 · Buchberger, Jr. · 2007 [cited by applicant]
US 7215697B2 · Hill et al. · 2007 [cited by applicant]
US 7220937B2 · Hoffman · 2007 [cited by applicant]
US 7251121B2 · Bhutta · 2007 [cited by applicant]
US 7259623B2 · Coleman · 2007 [cited by applicant]
US 7298128B2 · Bhutta · 2007 [cited by applicant]
US 7467612B2 · Suckewer · 2008 [cited by applicant]
US 7514936B2 · Anwar · 2009 [cited by applicant]
US 7795877B2 · Radtke · 2010 [cited by applicant]
US 7796368B2 · Kotani · 2010 [cited by applicant]
US 8169162B2 · Yuzurihara · 2012 [cited by applicant]
US 8203372B2 · Arduini · 2012 [cited by applicant]
US 8222822B2 · Gilbert · 2012 [cited by applicant]
US 8421377B2 · Kirchmeier · 2013 [cited by applicant]
US 8466622B2 · Knaus · 2013 [cited by applicant]
US 8471746B2 · Kurunezi et al. · 2013 [cited by applicant]
US 8491759B2 · Pipitone et al. · 2013 [cited by applicant]
US 8742669B2 · Carter et al. · 2014 [cited by applicant]
US 8779662B2 · Boston · 2014 [cited by applicant]
US 8803424B2 · Boston · 2014 [cited by applicant]
US 8884180B2 · Ilie · 2014 [cited by applicant]
US 8896391B2 · du Toit · 2014 [cited by applicant]
US 8928229B2 · Boston · 2015 [cited by applicant]
US 9042121B2 · Walde et al. · 2015 [cited by applicant]
US 9065426B2 · Mason et al. · 2015 [cited by applicant]
US 9105447B2 · Brouk et al. · 2015 [cited by applicant]
US 9111725B2 · Boston · 2015 [cited by applicant]
US 9124248B2 · Van Zyl et al. · 2015 [cited by applicant]
US 9142388B2 · Hoffman et al. · 2015 [cited by applicant]
US 9148086B2 · Fife et al. · 2015 [cited by applicant]
US 9166481B1 · Vinciarelli · 2015 [cited by applicant]
US 9171700B2 · Gilmore · 2015 [cited by applicant]
US 9196459B2 · Bhutta · 2015 [cited by applicant]
US 9208992B2 · Brouk et al. · 2015 [cited by applicant]
US 9224579B2 · Finley et al. · 2015 [cited by applicant]
US 9225299B2 · Mueller et al. · 2015 [cited by applicant]
US 9287098B2 · Finley et al. · 2016 [cited by applicant]
US 9294100B2 · Van Zyl et al. · 2016 [cited by applicant]
US 9306533B1 · Mavretic · 2016 [cited by applicant]
US 9313870B2 · Walde et al. · 2016 [cited by applicant]
US 9337804B2 · Mason et al. · 2016 [cited by applicant]
US 9345122B2 · Bhutta · 2016 [cited by applicant]
US 9385021B2 · Chen · 2016 [cited by applicant]
US 9418822B2 · Kaneko · 2016 [cited by applicant]
US 9478397B2 · Blackburn et al. · 2016 [cited by applicant]
US 9483066B2 · Finley et al. · 2016 [cited by applicant]
US 9490353B2 · Van Zyl et al. · 2016 [cited by applicant]
US 9496122B1 · Bhutta · 2016 [cited by applicant]
US 9520269B2 · Finley et al. · 2016 [cited by applicant]
US 9524854B2 · Hoffman et al. · 2016 [cited by applicant]
US 9525412B2 · Mavretic · 2016 [cited by applicant]
US 9536713B2 · Van Zyl et al. · 2017 [cited by applicant]
US 9543122B2 · Bhutta · 2017 [cited by applicant]
US 9544987B2 · Mueller et al. · 2017 [cited by applicant]
US 9558917B2 · Finley et al. · 2017 [cited by applicant]
US 9577516B1 · Van Zyl et al. · 2017 [cited by applicant]
US 9584090B2 · Mavretic · 2017 [cited by applicant]
US 9578731B2 · Hoffman et al. · 2017 [cited by applicant]
US 9591739B2 · Bhutta · 2017 [cited by applicant]
US 9589767B2 · Finley et al. · 2017 [cited by applicant]
US 9620340B2 · Finley et al. · 2017 [cited by applicant]
US 9651957B1 · Finley et al. · 2017 [cited by applicant]
US 9660613B2 · Van Zyl et al. · 2017 [cited by applicant]
US 9673028B2 · Walde et al. · 2017 [cited by applicant]
US 9697911B2 · Bhutta · 2017 [cited by applicant]
US 9711331B2 · Mueller et al. · 2017 [cited by applicant]
US 9711335B2 · Christie et al. · 2017 [cited by applicant]
US 9728378B2 · Bhutta et al. · 2017 [cited by applicant]
US 9729122B2 · Mavretic · 2017 [cited by applicant]
US 9741544B2 · Van Zyl et al. · 2017 [cited by applicant]
US 9745660B2 · Bhutta · 2017 [cited by applicant]
US 9748076B1 · Choi et al. · 2017 [cited by applicant]
US 9755641B1 · Bhutta · 2017 [cited by applicant]
US 9773644B2 · Van Zyl et al. · 2017 [cited by applicant]
US 9807863B1 · Van Zyl et al. · 2017 [cited by applicant]
US 9812305B2 · Pelleymounter et al. · 2017 [cited by applicant]
US 9844127B2 · Bhutta · 2017 [cited by applicant]
US 9852890B2 · Mueller et al. · 2017 [cited by applicant]
US 9854659B2 · Van Zyl et al. · 2017 [cited by applicant]
US 9865432B1 · Bhutta · 2018 [cited by applicant]
US 9952297B2 · Wang · 2018 [cited by applicant]
US 10008317B2 · Iyer · 2018 [cited by applicant]
US 10020752B1 · Vinciarelli · 2018 [cited by applicant]
US 10026592B2 · Chen · 2018 [cited by applicant]
US 10026594B2 · Bhutta · 2018 [cited by applicant]
US 10026595B2 · Choi et al. · 2018 [cited by applicant]
US 10074518B2 · Van Zyl et al. · 2018 [cited by applicant]
US 10139285B2 · Murray et al. · 2018 [cited by applicant]
US 10141788B2 · Kamstedt · 2018 [cited by applicant]
US 10194518B2 · Van Zyl et al. · 2019 [cited by applicant]
US 10217618B2 · Larson et al. · 2019 [cited by applicant]
US 10224184B2 · Van Zyl · 2019 [cited by applicant]
US 10224186B2 · Polak et al. · 2019 [cited by applicant]
US 10263577B2 · Van Zyl et al. · 2019 [cited by applicant]
US 10269540B1 · Carter et al. · 2019 [cited by applicant]
US 10314156B2 · Van Zyl et al. · 2019 [cited by applicant]
US 10332730B2 · Christie et al. · 2019 [cited by applicant]
US 10340879B2 · Mavretic · 2019 [cited by applicant]
US 10373811B2 · Christie et al. · 2019 [cited by applicant]
US 10374070B2 · Wood · 2019 [cited by applicant]
US 10410836B2 · McChesney · 2019 [cited by applicant]
US 10411769B2 · Bae · 2019 [cited by applicant]
US 10447174B1 · Porter, Jr. et al. · 2019 [cited by applicant]
US 10469108B2 · Howald · 2019 [cited by applicant]
US 10475622B2 · Pankratz et al. · 2019 [cited by applicant]
US 20030121609A1 · Ohmi et al. · 2003 [cited by applicant]
US 20030150710A1 · Evans et al. · 2003 [cited by applicant]
US 20030230984A1 · Kitamura et al. · 2003 [cited by applicant]
US 20040016402A1 · Walther et al. · 2004 [cited by applicant]
US 20040026235A1 · Stowell, Jr. · 2004 [cited by applicant]
US 20050034811A1 · Mahoney et al. · 2005 [cited by applicant]
US 20050045475A1 · Wantanabe · 2005 [cited by applicant]
US 20050270805A1 · Yasumura · 2005 [cited by applicant]
US 20060005928A1 · Howald · 2006 [cited by applicant]
US 20060169582A1 · Brown et al. · 2006 [cited by applicant]
US 20060169584A1 · Brown et al. · 2006 [cited by applicant]
US 20060249729A1 · Mundt et al. · 2006 [cited by applicant]
US 20070121267A1 · Kotani · 2007 [cited by applicant]
US 20070222428A1 · Garvin et al. · 2007 [cited by applicant]
US 20080061793A1 · Anwar et al. · 2008 [cited by applicant]
US 20080061901A1 · Gilmore · 2008 [cited by applicant]
US 20080087381A1 · Shannon et al. · 2008 [cited by applicant]
US 20080197854A1 · Valcore et al. · 2008 [cited by applicant]
US 20080272875A1 · Huang et al. · 2008 [cited by applicant]
US 20080317974A1 · de Vries · 2008 [cited by applicant]
US 20090026964A1 · Knaus · 2009 [cited by applicant]
US 20090206974A1 · Meinke · 2009 [cited by applicant]
US 20100012029A1 · Forester et al. · 2010 [cited by applicant]
US 20100072172A1 · Ui et al. · 2010 [cited by applicant]
US 20100096261A1 · Hoffman et al. · 2010 [cited by applicant]
US 20100098882A1 · Lubomirsky et al. · 2010 [cited by applicant]
US 20100159120A1 · Dzengeleski et al. · 2010 [cited by applicant]
US 20110121735A1 · Penny · 2011 [cited by applicant]
US 20110140607A1 · Moore et al. · 2011 [cited by applicant]
US 20110148303A1 · Van Zyl et al. · 2011 [cited by applicant]
US 20110174777A1 · Jensen et al. · 2011 [cited by applicant]
US 20110214811A1 · Ashida · 2011 [cited by examiner]
US 20120097104A1 · Pipitone et al. · 2012 [cited by applicant]
US 20120097524A1 · Pipitone et al. · 2012 [cited by applicant]
US 20120145322A1 · Gushiken et al. · 2012 [cited by applicant]
US 20120164834A1 · Jennings et al. · 2012 [cited by applicant]
US 20120262064A1 · Nagarkatti · 2012 [cited by applicant]
US 20130002136A1 · Blackburn et al. · 2013 [cited by applicant]
US 20130140984A1 · Hirayama · 2013 [cited by applicant]
US 20130180964A1 · Ilic · 2013 [cited by applicant]
US 20130214683A1 · Valcore et al. · 2013 [cited by applicant]
US 20130240482A1 · Nam et al. · 2013 [cited by applicant]
US 20130278140A1 · Mudunuri et al. · 2013 [cited by applicant]
US 20130345847A1 · Valcore et al. · 2013 [cited by applicant]
US 20140225504A1 · Kaneko · 2014 [cited by applicant]
US 20140239813A1 · Van Zyl · 2014 [cited by applicant]
US 20140265911A1 · Kamata et al. · 2014 [cited by applicant]
US 20140328027A1 · Zhang et al. · 2014 [cited by applicant]
US 20140367043A1 · Bishara et al. · 2014 [cited by applicant]
US 20150002020A1 · Boston · 2015 [cited by applicant]
US 20150115797A1 · Yuzurihara · 2015 [cited by applicant]
US 20150150710A1 · Evans et al. · 2015 [cited by applicant]
US 20150313000A1 · Thomas et al. · 2015 [cited by applicant]
US 20160002020A1 · Orita · 2016 [cited by applicant]
US 20160248396A1 · Mavretic · 2016 [cited by applicant]
US 20160308560A1 · Howald et al. · 2016 [cited by applicant]
US 20170018349A1 · Otsubo et al. · 2017 [cited by applicant]
US 20170133886A1 · Kurs et al. · 2017 [cited by applicant]
US 20170338081A1 · Yamazawa · 2017 [cited by applicant]
US 20170345620A1 · Coumou et al. · 2017 [cited by applicant]
US 20180034446A1 · Wood · 2018 [cited by applicant]
US 20180102238A1 · Gu et al. · 2018 [cited by applicant]
US 20180115298A1 · Fujimoto · 2018 [cited by examiner]
US 20180261431A1 · Hammond, IV · 2018 [cited by applicant]
US 20190172683A1 · Mavretic · 2019 [cited by applicant]
US 20190199241A1 · Satoshi et al. · 2019 [cited by applicant]
US 20190385822A1 · Marakhtanov et al. · 2019 [cited by applicant]
JP 2006310245A · 2008 [cited by applicant]
JP 2010016124A · 2010 [cited by applicant]
JP 2015502213A · 2015 [cited by applicant]
KR 1020060067957A · 2006 [cited by applicant]
KR 1020140077866A · 2014 [cited by applicant]
KR 1020170127724A · 2017 [cited by applicant]
KR 1020180038596A · 2018 [cited by applicant]
WO 2012054305 · 2012 [cited by applicant]
WO 2012054306 · 2012 [cited by applicant]
WO 2012054307 · 2012 [cited by applicant]
WO 2016048449A1 · 2016 [cited by applicant]
WO 2016097730 · 2016 [cited by applicant]
WO 2019096564A1 · 2019 [cited by applicant]
WO 2019147513A1 · 2019 [cited by applicant]
WO 2019244734A1 · 2019 [cited by applicant]
PCT/US2018/062951—International Search Report and Written Opinion of International Searching Authority, dated Aug. 28, 2019, 10 pages. [cited by applicant]
Stowell, et al., “RF-superimposed DC and pulsed DC sputtering for deposition of transparent conductive oxides”, Thin Solid Films 515 (2007), pp. 7654-7657. [cited by applicant]
Bender, et al., “Characterization of a RF=do-magnetron discharge for the sputter deposition of transparent and highly conductive ITO films”, Appl. Phys. A 69, (1999), pp. 397-409. [cited by applicant]
Economou, Demetre J., “Fundamentals and application of ion-ion plasmas”, Applied Surface Science 253 (2007), pp. 6672-6680. [cited by applicant]
Godyak et al., “Plasma parameter evolution in a periodically pulsed ICP”, XXVIIth, Eindhoven, the Netherlands, Jul. 18-22, 2005, 4 pages. [cited by applicant]
Banna, et al., “Inductively Coupled Pulsed Plasmas in the Presence of Synchronous Pulsed Substrate Bias for Robust, Reliable, and Fine Conductor Etching”, IEEE Transactions on Plasma Science, vol. 37, No. 9, Sep. 2009, … [cited by applicant]
Kushner, Mark J., “Pulsed Plasmas as a Method to Improve Uniformity During Materials Processing”, Journal of Applied Physics, Jul. 1, 2004, vol. 96, No. 1, pp. 82-93. [cited by applicant]
LTM Technologies, M. Haass “Synchronous Plasma Pulsing for Etch Applications”, Apr. 3, 2010 16 pages. [cited by applicant]
PCT/US2020/038892—International Search Report and Written Opinion of the International Searching Authority, dated Oct. 6, 2020, 3 pages. [cited by applicant]
PCT/US2020/038899—International Search Report and Written Opinion of the International Searching Authority, dated Sep. 26, 2020, 5 pages. [cited by applicant]
PCT/US2021/012847—International Search Report and Written Opinion of the International Searching Authority, dated May 6, 2021, 11 pages. [cited by applicant]
PCT/US2021/012849 International Search Report and Written Opinion of the International Searching Authority, dated May 10, 2021, 11 pages. [cited by applicant]
PCT/US2021/012851 International Search Report and Written Opinion of the International Searching Authority, dated May 6, 2021, 10 pages. [cited by applicant]
Cited By (1)
US 12,482,636