Plasma processing apparatus and plasma processing method
View Patent ↗A plasma processing apparatus can excite uniform plasma on a large substrate. The plasma processing apparatus 10 includes a vacuum chamber 100 having therein a mounting table 115 configured to mount a substrate G, and a plasma space, formed above the mounting table, in which plasma is generated; a first coaxial waveguide 225 through which a high frequency power for exciting plasma is supplied into the vacuum chamber 100 ; a waveguide path 205 , connected to the first coaxial waveguide 225 , having a slit-shaped opening toward the plasma space; and an adjusting unit configured to adjust a wavelength of the high frequency power propagating in the waveguide path in a lengthwise direction of the slit-shaped opening. By adjusting the wavelength of the high frequency power propagating in the waveguide path to be sufficiently lengthened, uniform plasma can be excited on the large substrate.
1. A plasma processing apparatus comprising:
a decompression chamber that includes therein a mounting table configured to mount a processing target object thereon; and a plasma space in which plasma is generated, the plasma space being formed above the mounting table;
a transmission path comprising a first coaxial waveguide through which a high frequency power for exciting plasma is supplied into the decompression chamber;
a waveguide path, connected to the transmission path, having a slit-shaped opening toward the plasma space;
a matching device which is connected to a high frequency power supply;
an adjusting unit configured to adjust an effective height of the waveguide path and adjust wavelength of a high frequency power propagating in the waveguide path in a lengthwise direction of the slit-shaped opening;
a reflectometer connected to the first coaxial waveguide and configured to measure a reflection or an impedance of a high frequency power propagating in the first coaxial waveguide; and
a controller configured to adjust a wavelength of the high frequency power propagating in the waveguide path in the lengthwise direction of the slit-shaped opening based on the reflection or the impedance measured by the reflectometer,
wherein both ends of the waveguide path in the lengthwise direction of the slit-shaped opening are not short-circuited.
2. The plasma processing apparatus of claim 1 ,
wherein the adjusting unit is configured to adjust the wavelength of the high frequency power propagating in the waveguide path such that the wavelength of the high frequency power propagating in the waveguide path becomes equal to or larger than about seven times the length of the slit-shaped opening in the lengthwise direction thereof.
3. The plasma processing apparatus of claim 1 ,
the first coaxial waveguide includes an internal conductor electrically connected to one of two wall surfaces constituting the waveguide path; and an external conductor electrically connected to the other one of the two wall surfaces, and
the internal conductor of the first coaxial waveguide faces a widthwise direction of the slit-shaped opening.
4. The plasma processing apparatus of claim 3 , further comprising:
a first dielectric plate inserted into the waveguide path and exposed to the plasma space,
wherein the internal conductor of the first coaxial waveguide penetrates through a hole formed in the first dielectric plate.
5. The plasma processing apparatus of claim 1 , further comprising:
a second coaxial waveguide including an internal conductor electrically connected to one of two wall surfaces constituting the waveguide path and an external conductor electrically connected to the other one of the two wall surfaces,
wherein the internal conductor of the second coaxial waveguide faces a widthwise direction of the slit-shaped opening, and
the adjusting unit is an impedance variable circuit connected to the second coaxial waveguide.
6. The plasma processing apparatus of claim 1 ,
wherein the number of the first coaxial waveguide is one and the number of the second coaxial waveguide is two,
and the first coaxial waveguide is disposed between the two second coaxial waveguides.
7. The plasma processing apparatus of claim 1 ,
wherein the impedance variable circuit is one of a circuit including only a variable capacitor, a circuit including a variable capacitor and a coil that are connected in parallel, or a circuit including a variable capacitor and a coil that are connected in series.
8. The plasma processing apparatus of claim 1 ,
wherein the adjusting unit comprises:
a metal member that is configured to short-circuit two wall surfaces constituting the waveguide path and faces a widthwise direction of the slit-shaped opening; and
a driving device configured to move the metal member.
9. The plasma processing apparatus of claim 1 ,
wherein the adjusting unit comprises:
a second dielectric plate inserted into the waveguide path; and
a driving device configured to move the second dielectric plate.
10. The plasma processing apparatus of claim 1 ,
wherein the controller is configured to adjust the wavelength of the high frequency power propagating in the waveguide path to minimize a reflection of the high frequency power from the first coaxial waveguide.
11. A plasma processing apparatus comprising:
a decompression chamber that includes therein a mounting table configured to mount a processing target object thereon; and a plasma space in which plasma is generated, the plasma space being formed above the mounting table;
a transmission path through which a high frequency power for exciting plasma is supplied into the decompression chamber;
a waveguide path, connected to the transmission path, having a slit-shaped opening toward the plasma space;
an adjusting unit configured to adjust wavelength of a high frequency power propagating in the waveguide path in a lengthwise direction of the slit-shaped opening,
wherein both ends of the waveguide path in the lengthwise direction of the slit-shaped opening are not short-circuited, and
the adjusting unit comprises:
a metal member that is configured to short-circuit two wall surfaces constituting the waveguide path and faces a widthwise direction of the slit-shaped opening; and
a driving device configured to move the metal member.
12. A plasma processing apparatus comprising:
a decompression chamber that includes therein a mounting table configured to mount a processing target object thereon; and a plasma space in which plasma is generated, the plasma space being formed above the mounting table;
a transmission path through which a high frequency power for exciting plasma is supplied into the decompression chamber;
a waveguide path, connected to the transmission path, having a slit-shaped opening toward the plasma space;
an adjusting unit configured to adjust wavelength of a high frequency power propagating in the waveguide path in a lengthwise direction of the slit-shaped opening,
wherein both ends of the waveguide path in the lengthwise direction of the slit-shaped opening are not short-circuited, and
the adjusting unit comprises:
a second dielectric plate inserted into the waveguide path; and
a driving device configured to move the second dielectric plate.
13. A plasma processing method using a plasma processing apparatus including a decompression chamber that includes therein a mounting table configured to mount a processing target object thereon, and a plasma space in which plasma is generated, the plasma space being formed above the mounting table; a transmission path through which a high frequency power for exciting plasma is supplied into the decompression chamber; a waveguide path, connected to the transmission path, having a slit-shaped opening toward the plasma space; and an adjusting unit configured to adjust a wavelength of a high frequency power propagating in the waveguide path in a lengthwise direction of the slit-shaped opening the method comprising:
measuring a reflection or an impedance of a high frequency power propagating in a first coaxial waveguide by a reflectometer connected to the first coaxial waveguide; and
adjusting a wavelength of the high frequency power propagating in the waveguide path in the lengthwise direction of the slit-shaped opening based on the reflection or the impedance measured by the reflectometer,
wherein the plasma processing apparatus further comprises a metal member that is configured to short-circuit two wall surfaces constituting the waveguide path and faces a widthwise direction of the slit-shaped opening, and
in the adjusting the wavelength of the high frequency power propagating in the waveguide path, the wavelength of the high frequency power propagating in the waveguide path is adjusted by moving the metal member.
14. A plasma processing method using a plasma processing apparatus including a decompression chamber that includes therein a mounting table configured to mount a processing target object thereon, and a plasma space in which plasma is generated, the plasma space being formed above the mounting table; a transmission path through which a high frequency power for exciting plasma is supplied into the decompression chamber; a waveguide path, connected to the transmission path, having a slit-shaped opening toward the plasma space; and an adjusting unit configured to adjust a wavelength of a high frequency power propagating in the waveguide path in a lengthwise direction of the slit-shaped opening, the method comprising:
measuring a reflection or an impedance of a high frequency power propagating in a first coaxial waveguide by a reflectometer connected to the first coaxial waveguide; and
adjusting a wavelength of the high frequency power propagating in the waveguide path in the lengthwise direction of the slit-shaped opening based on the reflection or the impedance measured by the reflectometer,
wherein the plasma processing apparatus further comprises a second dielectric plate inserted into the waveguide path, and
in the adjusting the wavelength of the high frequency power propagating in the waveguide path, the wavelength of the high frequency power propagating in the waveguide path is adjusted by moving the second dielectric plate.