Semiconductor package having improved thermal interface between semiconductor die and heat spreading structure
A semiconductor package includes a base comprising a top surface and a bottom surface that is opposite to the top surface; a first semiconductor chip mounted on the top surface of the base in a flip-chip manner; a second semiconductor chip stacked on the first semiconductor chip and electrically coupled to the base by wire bonding; an in-package heat dissipating element comprising a dummy silicon die adhered onto the second semiconductor chip by using a high-thermal conductive die attach film; and a molding compound encapsulating the first semiconductor die, the second semiconductor die, and the in-package heat dissipating element.
1. A semiconductor package, comprising:
a base comprising a top surface and a bottom surface that is opposite to the top surface;
a first semiconductor chip mounted on the top surface of the base in a flip-chip manner;
a second semiconductor chip stacked on the first semiconductor chip and electrically coupled to the base by at least one connecting element;
an in-package heat dissipating element comprising a dummy silicon die disposed over a top surface of the first semiconductor chip by using a high-thermal conductivity die attach film; and
a molding compound encapsulating the first semiconductor chip, the second semiconductor chip, and the in-package heat dissipating element,
wherein the second semiconductor chip and the in-package heat dissipating element are attached onto the top surface of the first semiconductor chip in a side-by-side manner.
2. The semiconductor package according to claim 1 , wherein the second semiconductor chip is adhered to the first semiconductor chip by using a die attach film.
3. The semiconductor package according to claim 2 , wherein the die attach film comprises an epoxy adhesive layer.
4. The semiconductor package according to claim 2 , wherein the high-thermal conductivity die attach film comprises an adhesive film with a higher thermal conductivity than that of the die attach film.
5. The semiconductor package according to claim 2 , wherein the second semiconductor chip is adhered to the first semiconductor chip by using a die attach film.
6. The semiconductor package according to claim 5 , wherein the die attach film comprises an epoxy adhesive layer.
7. The semiconductor package according to claim 5 , wherein the die attach film has thermal conductivity of about 0.3 W/m-K.
8. The semiconductor package according to claim 5 , wherein the high-thermal conductivity die attach film comprises an adhesive film with a higher thermal conductivity than that of the die attach film.
9. The semiconductor package according to claim 8 , wherein the high-thermal conductivity die attach film has a thermal conductivity of about 2-50 W/m-K.
10. The semiconductor package according to claim 2 , wherein the molding compound has a thermal conductivity of about 2-8 W/m-K.
11. The semiconductor package according to claim 2 , wherein the molding compound has a thermal conductivity of 1 W/m-K.
12. The semiconductor package according to claim 1 , wherein a top surface of the in-package heat dissipating element is not covered by the molding compound and is exposed.