Semiconductor device including dam structure having air gap and electronic system including the same
A semiconductor device includes a peripheral circuit structure, a semiconductor layer, a source conductive layer, a connecting mold layer, a support conductive layer, a buried insulating layer, a gate stack structure, a mold structure, a channel structure and a supporter through the gate stack structure, a THV through the mold structure and the buried insulating layer, a dam structure between the gate stack structure and the mold structure, an upper supporter layer on the dam structure, and a word line separation layer through the gate stack structure and the upper supporter layer. The dam structure includes a first spacer, a second spacer inside the first spacer, a lower supporter layer connected to the upper supporter layer and partially on or covering an inner side wall of the second spacer, and an air gap with a side wall defined by the second spacer and a top end defined by the lower supporter layer.
1. A semiconductor device comprising:
a peripheral circuit structure comprising a substrate and a transistor, the substrate comprising a cell area and an extension area;
a semiconductor layer on the peripheral circuit structure;
a source conductive layer on the semiconductor layer in the cell area;
a connecting mold layer on the semiconductor layer in the extension area;
a support conductive layer on the source conductive layer and the connecting mold layer;
a buried insulating layer on the peripheral circuit structure in the extension area and contacting a side wall of the semiconductor layer;
a gate stack structure on the support conductive layer;
a mold structure on the buried insulating layer;
a channel structure and a supporter layer extending through the gate stack structure;
a through hole via (THV) extending through the mold structure and the buried insulating layer;
a dam structure between the gate stack structure and the mold structure;
wherein the supporter layer comprises an upper supporter layer and a lower supporter layer, with the upper supporter layer on the dam structure; and
a word line separation layer extending through the gate stack structure and the upper supporter layer,
wherein the dam structure comprises
a first spacer, and a second spacer on an inner side wall of the first spacer,
the lower supporter layer is connected to the upper supporter layer and on a portion of an inner side wall of the second spacer, and
an air gap with a side defined by the second spacer and a top end defined by the lower supporter layer.
2. The semiconductor device according to claim 1 , wherein the air gap is defined by the first spacer, the second spacer, the lower supporter layer, and the semiconductor layer.
3. The semiconductor device according to claim 1 , wherein:
the lower supporter layer has a bottom surface comprising a first inclined surface, and a second inclined surface connected to the first inclined surface at a vertex that forms in inverted U-shape or V-shape; and
a portion of an upper section of the air gap extends into the lower supporter layer between the first inclined surface and the second inclined surface.
4. The semiconductor device according to claim 3 , wherein the air gap extends vertically along a length of the second spacer with a width of the upper section of the air gap that is gradually reduced as the upper section extends upwards into the lower supporter layer.
5. The semiconductor device according to claim 1 , wherein a level of a bottom end of the air gap is lower than a level of an upper surface of the semiconductor layer.
6. The semiconductor device according to claim 1 , wherein the first spacer comprises:
a first section contacting an outer side wall of the second spacer; and
a second section contacting a lower end of the second spacer.
7. The semiconductor device according to claim 6 , wherein the air gap directly contacts an inner side wall of the second section.
8. The semiconductor device according to claim 1 , wherein the first spacer comprises an oxide, and the second spacer comprises a nitride.
9. The semiconductor device according to claim 1 , wherein the upper supporter layer and the lower supporter layer are integrated with each other, and comprise a same material.
10. The semiconductor device according to claim 1 , further comprising:
a first upper insulating layer and a second upper insulating layer between the gate stack structure and the upper supporter layer and that are positioned between the mold structure and the upper supporter layer,
wherein the first spacer, the second spacer and the lower supporter layer extend through the first upper insulating layer and the second upper insulating layer.
11. The semiconductor device according to claim 1 , wherein:
the first spacer comprises
a first outer spacer contacting the gate stack structure, and
a first inner spacer contacting the mold structure; and
the dam structure further comprises a horizontal layer interconnecting the first outer spacer and the first inner spacer.
12. The semiconductor device according to claim 11 , wherein the air gap is defined by the second spacer, the lower supporter layer and the horizontal layer.
13. A semiconductor device comprising:
a gate stack structure in which gate electrodes and gate insulating layers are alternately and repeatedly stacked;
a mold structure in which sacrificial layers and gate insulating layers are alternately and repeatedly stacked;
a dam structure between the gate stack structure and the mold structure and surrounding the mold structure;
a channel structure extending through the gate stack structure;
a through hole via (THV) inside the dam structure and extending through the mold structure;
an upper supporter layer on the gate stack structure, the mold structure, the dam structure, the channel structure and the THV; and
a word line separation layer extending through the gate stack structure and the upper supporter layer,
wherein the dam structure comprises
a first spacer, and a second spacer on an inner side wall of the first spacer,
a lower supporter layer connected to the upper supporter layer and on at least a portion of an inner side wall of the second spacer, and
an air gap with a side defined by the second spacer, at least a portion of the air gap extending into the lower supporter layer.
14. The semiconductor device according to claim 13 , wherein a level of a bottom end of the lower supporter layer is higher than a level of an upper surface of an uppermost one of the sacrificial layers.
15. The semiconductor device according to claim 13 , wherein a level of a bottom end of the lower supporter layer is lower than a level of an upper surface of an uppermost one of the sacrificial layers.
16. The semiconductor device according to claim 13 , wherein:
the lower supporter layer covers an entirety of the inner side wall of the second spacer; and
the air gap is defined by the lower supporter layer.
17. The semiconductor device according to claim 13 , wherein:
the first spacer comprises
a first section contacting an outer side wall of the second spacer, and
a second section contacting a lower end of the second spacer; and
the air gap directly contacts an inner side wall of the second section.
18. The semiconductor device according to claim 13 , further comprising:
a peripheral circuit structure; and
a semiconductor layer on the peripheral circuit structure,
wherein the air gap directly contacts a portion of the semiconductor layer.
19. An electronic system comprising:
a main substrate;
a semiconductor device on the main substrate; and
a controller electrically connected to the semiconductor device on the main substrate,
wherein the semiconductor device comprises
a semiconductor layer and a buried insulating layer,
a gate stack structure in which gate electrodes and gate insulating layers are alternately and repeatedly stacked, the gate stack structure being positioned on the semiconductor layer,
a mold structure in which sacrificial layers and gate insulating layers are alternately and repeatedly stacked, the mold structure being positioned on the buried insulating layer,
a dam structure between the gate stack structure and the mold structure and surrounding the mold structure,
a channel structure extending through the gate stack structure,
a through hole via (THV) inside the dam structure and extending through the mold structure and the buried insulating layer,
an upper supporter layer on the gate stack structure, the mold structure, the dam structure, the channel structure, and the THV, and
a word line separation layer extending through the gate stack structure and the upper supporter layer,
wherein the dam structure comprises
a spacer extending between the gate stack structure and the mold structure,
a lower supporter layer connected to the upper supporter layer and on a portion of an inner side wall of the spacer, and
an air gap defined by the semiconductor layer, the spacer and the lower supporter layer.
20. The electronic system according to claim 19 , wherein:
the spacer comprises a first spacer, and a second spacer on an inner side wall of the first spacer;
the first spacer comprises an oxide; and
the second spacer comprises a nitride.