Methods for dicing semiconductor wafers having a metallization layer and semiconductor devices made by the methods
A method for forming semiconductor devices from a semiconductor wafer includes cutting a first surface of a semiconductor wafer to form a first region that extends partially through the semiconductor wafer and the first region has a bottom portion. The method further includes directing a beam of laser light to the semiconductor wafer such that the beam of laser light is focused within the semiconductor wafer between the first surface and the second surface thereof and the beam of laser light further cuts the semiconductor wafer by material ablation to form a second region aligned with the first region. A resulting semiconductor device is disclosed as well.
1 . A method for forming semiconductor devices from a semiconductor wafer having a first surface, a second surface, a metallization layer arranged on the second surface, and including at least a first device region, and a second device region, the method comprising:
cutting the first surface of the semiconductor wafer to form a first region that extends partially through the semiconductor wafer and the first region has a bottom portion; and
directing a beam of laser light to the semiconductor wafer such that the beam of laser light is focused within the semiconductor wafer between the first surface and the second surface thereof and the beam of laser light further at least partially cuts the semiconductor wafer by material ablation to form a second region aligned with and below the first region,
wherein there is a remaining portion below the second region, and
wherein the second region at least partially extends into the metallization layer.
2 . The method of claim 1
wherein forming the first region includes sawing the first region into the first surface of the semiconductor wafer with a saw; and
wherein the method for forming semiconductor devices does not require formation of street structures.
3 . The method of claim 1
wherein the directing a beam of laser light to the semiconductor wafer further comprises directing the beam of laser light in the first region to form the second region;
wherein the first region has a depth into the semiconductor wafer of 50% to 99% of a thickness of the semiconductor wafer; and
wherein the remaining portion comprises a break region.
4 . The method of claim 3 further comprising arranging the metallization layer on the second surface without street structures,
wherein the directing the beam of laser light in the first region further comprising ablating a portion of the metallization layer such that a remaining portion of the metallization layer forms the break region; and
wherein the method further comprises singulating by breaking the semiconductor wafer to form a first die and a second die, the first die including the first device region and the second die including the second device region.
5 . The method of claim 1 wherein the first region has a depth into a portion of the semiconductor wafer between the first device region and the second device region of at least 50% of a thickness of the portion of the semiconductor wafer.
6 . The method of claim 1 wherein the directing the beam of laser light is conducted such that the beam of laser light causes ablation of material of the semiconductor wafer with the beam of laser light focused between the bottom portion of the first region and the second surface.
7 . The method of claim 1 wherein the directing the beam of laser light includes directing the beam of laser light with a laser device arranged above the first surface of the semiconductor wafer.
8 . The method of claim 1 further comprising fabricating the first device region and the second device region by forming at least one device layer on or in the first surface of the semiconductor wafer.
9 . The method of claim 8 wherein the first device region and the second device region comprise a first transistor and a second transistor, respectively.
10 . The method of claim 8 wherein the first device region and the second device region comprise a first high-electron mobility transistor (HEMT) and a second high-electron mobility transistor (HEMT), respectively.
11 . The method of claim 8 wherein the first device region and the second device region comprise a first light emitting diode (LED) and a second light emitting diode (LED), respectively.
12 . A method for forming semiconductor devices from a semiconductor wafer having a first surface and a second surface and including at least a first device region and a second device region, the method comprising:
cutting the first surface of the semiconductor wafer to form a first region that extends partially through the semiconductor wafer; and
directing a beam of laser light to the semiconductor wafer such that the beam of laser light is focused within the semiconductor wafer between the first surface and the second surface thereof and the beam of laser light further cuts the semiconductor wafer by material ablation to form a second region such that there is an incomplete separation of the semiconductor wafer and the second region is aligned with and below the first region,
wherein the directing a beam of laser light to the semiconductor wafer further comprises directing the beam of laser light in the first region to form the second region;
wherein the second region at least partially extends into a metallization layer arranged on the second surface; and
wherein the directing the beam of laser light in the first region results in a remaining portion below the second region.
13 . The method of claim 12 wherein the first region has a depth into a portion of the semiconductor wafer between the first device region and the second device region of at least 50% of a thickness of the portion of the semiconductor wafer.
14 . The method of claim 12 wherein the directing the beam of laser light is conducted such that the beam of laser light causes ablation of material of the semiconductor wafer with the beam of laser light focused between a bottom portion of the first region and the second surface.
15 . The method of claim 12 further comprising arranging the metallization layer on the second surface without street structures,
wherein the directing the beam of laser light includes directing the beam of laser light with a laser device arranged above the first surface of the semiconductor wafer; and
wherein the directing the beam of laser light further includes ablating a portion of the metallization layer such that a remaining portion of the metallization layer forms a break region.
16 . The method of claim 12 further comprising fabricating the first device region and the second device region by forming at least one device layer on or in the first surface of the semiconductor wafer.
17 . The method of claim 16 wherein the first device region and the second device region comprise a first transistor and a second transistor, respectively.
18 . The method of claim 16 wherein the first device region and the second device region comprise a first high-electron mobility transistor (HEMT) and a second high-electron mobility transistor (HEMT), respectively.
19 . The method of claim 16 wherein the first device region and the second device region comprise a first light emitting diode (LED) and a second light emitting diode (LED), respectively.
20 . A method for forming semiconductor devices from a semiconductor wafer having a first surface and a second surface and including at least a first device region and a second device region, the method comprising:
cutting the first surface of the semiconductor wafer to form a first region that extends partially through the semiconductor wafer; and
directing a beam of laser light to the semiconductor wafer such that the beam of laser light is focused within the semiconductor wafer between the first surface and the second surface thereof and the beam of laser light further cuts the semiconductor wafer by material ablation to form a second region such that there is an incomplete separation of the semiconductor wafer and the second region is aligned with and below the first region,
wherein the directing a beam of laser light to the semiconductor wafer further comprises directing the beam of laser light in the first region to form the second region;
wherein the second region at least partially extends into a metallization layer arranged on the second surface;
wherein the directing the beam of laser light in the first region results in a remaining portion below the second region; and
wherein the method further comprises singulating by breaking the semiconductor wafer to form a first die and a second die, the first die including the first device region and the second die including the second device region.