Granted Patent B2

US 12,341,491 · App. 17/703,185 · Granted Jun 24, 2025

Inventors: Tapani Makkonen (Espoo, FI); Markku Ylilammi (Espoo, FI); Tuomas Pensala (Espoo, FI); James Dekker (Espoo, FI)

Assignee: Teknologian tutkimuskeskus VTT Oy

H03H9/547H03H9/132H03H9/173

Abstract

Claims (31)

1. A method of fabricating an acoustic wave filter device, the method comprising:

forming an acoustic wave filter element and a first resonator coupled to the acoustic wave filter element,

wherein the acoustic wave filter element comprises interdigitated input electrodes and output electrodes located on a top surface of a piezoelectric layer and a counter-electrode on a bottom surface of the piezoelectric layer, wherein the acoustic wave filter element provides a response with a sideband at a sideband frequency range, and

wherein the first resonator comprises a first resonator electrode on the top surface of the piezoelectric layer and a first resonator counter-electrode on the bottom surface of the piezoelectric layer, the first resonator having a first notch in resonator impedance at a first resonance frequency; and

tuning the first resonance frequency to fall within the sideband frequency range to suppress the sideband by

depositing a first mass load on top of the first resonator electrode to reduce the first resonance frequency, or

partly removing the first resonator electrode to increase the first resonance frequency.

2. The method of claim 1 , wherein the forming further comprises forming a second resonator coupled to the acoustic wave filter element, the second resonator comprising a second resonator electrode on the top surface of the piezoelectric layer, a second resonator counter-electrode on the bottom surface of the piezoelectric layer,

wherein the second resonator has a second notch in resonator impedance at a second resonance frequency that is different from the first resonance frequency.

3. The method of claim 2 , further comprising tuning the second resonance frequency to fall within the sideband frequency range by

depositing a second mass load on top of the second resonator electrode to reduce the second resonance frequency, or

partly removing the second resonator electrode to increase the second resonance frequency.

4. The method of claim 3 , wherein a tuned second resonance frequency obtained by the tuning of the second resonance frequency is different from a tuned first resonance frequency obtained by the tuning of the first resonance frequency.

5. The method of claim 3 , wherein the first mass load and the second mass load are composed of a same material but with different thicknesses, wherein the same material comprises metal or semiconductor material.

6. The method of claim 3 , wherein the first resonance frequency and the second resonance frequency differ by at least 3%.

7. The method of claim 3 , wherein the first resonator electrode is electrically coupled to the input electrodes, and the second resonator electrode is electrically coupled to the output electrodes.

8. The method of claim 3 , wherein the first resonator electrode is electrically coupled to the second resonator electrode.

9. The method of claim 8 , wherein the first resonator electrode has a first edge facing the acoustic wave filter element, a second edge on a side of the first resonator electrode farther from the acoustic wave filter element, and a third edge connecting the first edge and the second edge, and

wherein the second resonator electrode is positioned adjacent the second edge of the first resonator electrode.

10. The method of claim 8 , wherein the first resonator electrode has a first edge facing the acoustic wave filter element, a second edge on a side of the first resonator electrode farther from the acoustic wave filter element, and a third edge connecting the first edge and the second edge, and

wherein the second resonator electrode is positioned adjacent the third edge of the first resonator electrode.

11. The method of claim 8 , wherein the first resonator electrode and the second resonator electrode are electrically coupled by sharing a common edge.

12. The method of claim 8 , wherein the first resonator electrode and the second resonator electrode are electrically coupled by a conductive line that bridges a gap between the first resonator electrode and the second resonator electrode.

13. The method of claim 3 , wherein a first portion of the first mass load is attached to the first resonator electrode, a second portion of the first mass load is attached to the second resonator electrode, and the first portion and the second portion have different thicknesses.

14. The method of claim 1 , wherein the first mass load covers only a portion of the top of the first resonator electrode.

15. The method of claim 1 , wherein the forming comprises forming the input electrodes, the output electrodes, and the first resonator electrode by separate portions of the same electrode layer on the top surface of the piezoelectric layer.

16. The method of claim 1 , wherein the acoustic wave filter element is a laterally acoustically coupled bulk acoustic wave (LBAW) filter.

17. The method of claim 1 , wherein the first mass load is composed of the same material of the first resonator electrode.

18. The method of claim 1 , wherein the first mass load is composed of a different material than the first resonator electrode.

19. The method of claim 1 , wherein the counter-electrode of the acoustic wave filter element and the first resonator counter-electrode are provided by a common counter-electrode that continuously spans the acoustic wave filter element and the first resonator.

20. The method of claim 1 , wherein the first resonator is in direct contact with a plurality of electrodes in at least one of the input electrodes or the output electrodes such that the plurality of electrodes extend from an edge of the first resonator electrode and are spaced apart along the edge of the first resonator electrode.

Assignments (2)

Continuity (3)

References Cited (63)