Acoustic wave devices

1. An acoustic wave device, comprising:

(a) a substrate;

(b) one or more series acoustic wave resonators, each series acoustic wave resonator having a bottom electrode formed on the substrate, a piezoelectric layer formed on the bottom electrode, a top electrode formed on the piezoelectric layer, and a passivation layer formed on the top electrode; and

(c) one or more shunt acoustic wave resonators, each shunt acoustic wave resonator having a bottom electrode formed directly on the substrate, a mass load layer formed directly on the bottom electrode, a piezoelectric layer formed directly on the mass load layer, a top electrode formed directly on the piezoelectric layer, and a passivation layer formed on the top electrode, such that the bottom electrode, the mass load layer, the piezoelectric layer, the top electrode and the passivation layer are sequentially stacked over the substrate, wherein the bottom electrode comprises one of tungsten, molybdenum, platinum, ruthenium, iridium, titanium tungsten, titanium, and a combination of them, wherein the mass load layer comprises one of tungsten, molybdenum, platinum, tantalum, ruthenium, iridium, titanium tungsten, silicon nitride and silicon carbide, and wherein the mass load layer is substantially in contact with the bottom electrode,

wherein the one or more series acoustic wave resonators and the one or more shunt acoustic wave resonators are coupled to each other in one of lattice and ladder configurations.

2. The acoustic wave device of claim 1 , wherein the substrate is provided with an air cavity or an acoustic mirror, whereby the one or more series acoustic wave resonators and the one or more shunt acoustic wave resonators are located over the air cavity or the acoustic mirror.

3. The acoustic wave device of claim 1 , wherein the mass load layer has a thickness in a range of about 5 nm to about 500 nm.

4. An acoustic wave device, comprising:

(a) a substrate;

(b) one or more series acoustic wave resonators, each series acoustic wave resonator having a first composite layered structure formed on the substrate, a bottom electrode formed on the first composite layered structure, a piezoelectric layer formed on the bottom electrode, a top electrode formed on the piezoelectric layer, and a passivation layer formed on the top electrode; and

(c) one or more shunt acoustic wave resonators, each shunt acoustic wave resonator having a second composite layered structure formed on the substrate, a bottom electrode formed on the second composite layered structure, a piezoelectric layer formed on the bottom electrode, a top electrode formed on the piezoelectric layer, and a passivation layer formed on the top electrode, wherein the second composite layered structure comprises a mass load layer and a plurality of layers alternately formed of a high acoustic impedance material and a low acoustic impedance material, wherein the high acoustic impedance layers and the low acoustic impedance layers are alternately adjacently disposed such that the mass load layer is sandwiched between a low acoustic impedance layer and a high acoustic impedance layer adjacent to the low acoustic impedance layer,

wherein the one or more series acoustic wave resonators and the one or more shunt acoustic wave resonators are coupled to each other in one of lattice and ladder configurations.

5. The acoustic wave device of claim 4 , wherein the first composite layered structure comprises a plurality of layers alternately formed of a high acoustic impedance material and a low acoustic impedance material, wherein the high acoustic impedance layers and the low acoustic impedance layers are alternately adjacently disposed.

6. The acoustic wave device of claim 4 , wherein the mass load layer has a thickness in a range of about 5 nm to about 500 nm.