Semiconductor device and manufacturing method, and electronic appliance
There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.
1. An imaging device, comprising:
a first semiconductor chip, wherein the first semiconductor chip includes a first semiconductor substrate and a plurality of arrays of pixels, and wherein the first semiconductor chip has a rectangular shape;
a second semiconductor chip, wherein the second semiconductor chip includes a second semiconductor substrate, wherein the second semiconductor substrate has a rectangular shape, wherein an area of the second semiconductor substrate is less than an area of the first semiconductor substrate, and wherein the second semiconductor substrate is disposed on a light receiving surface side of the first semiconductor substrate; and
a third semiconductor chip, wherein the third semiconductor chip includes a third semiconductor substrate, wherein the third semiconductor substrate has a rectangular shape, wherein an area of the third semiconductor substrate is less than the area of the first semiconductor substrate, and wherein the third semiconductor substrate is disposed on the light receiving surface side of the first semiconductor substrate,
wherein a first array of pixels included in the plurality of arrays of pixels is adjacent to at least a portion of the second semiconductor substrate, and
wherein a second array of pixels included in the plurality of arrays of pixels is adjacent to at least a portion of the third semiconductor substrate.
2. The imaging device of claim 1 , further comprising:
a first dam, wherein the first dam is disposed between the first array of pixels and the second semiconductor substrate in a cross-sectional view.
3. The imaging device of claim 2 , further comprising:
a second dam, wherein the second dam is disposed between the second array of pixels and the third semiconductor substrate in a cross-sectional view.
4. The imaging device of claim 1 , wherein the first semiconductor chip further includes a first wiring layer, and wherein the first wiring layer is disposed on a side of the first semiconductor substrate opposite to the light receiving surface side of the first semiconductor substrate.
5. The imaging device of claim 4 , wherein the second semiconductor chip further includes a second wiring layer, and wherein the second wiring layer is disposed between the second semiconductor substrate and the first semiconductor substrate in a cross-sectional view.
6. The imaging device of claim 5 , wherein the third semiconductor chip further includes a third wiring layer, and wherein the third wiring layer is disposed between the third semiconductor substrate and the first semiconductor substrate in the cross-sectional view.
7. The imaging device of claim 2 , wherein the first dam defines an area, and wherein a space between the first semiconductor chip and the second semiconductor chip, and within the area defined by the first dam, contains an underfill resin.
8. The imaging device of claim 1 , wherein the first semiconductor chip is connected to the second semiconductor chip by bumps.
9. The imaging device of claim 8 , wherein the first semiconductor chip is connected to the third semiconductor chip by bumps.
10. The imaging device of claim 8 , wherein the first semiconductor chip includes electrode pads formed in a peripheral circuit unit, wherein the second semiconductor chip includes electrode pads, and wherein the bumps connect the electrode pads of the first semiconductor chip to the electrode pads of the second semiconductor chip.
11. The imaging device of claim 10 , wherein the first semiconductor chip includes a plurality of electrodes.
12. The imaging device of claim 11 , wherein the plurality of electrodes are formed in the area outside of an area of the second semiconductor substrate and outside of the area of the third semiconductor substrate.
13. The imaging device of claim 1 , wherein the first semiconductor substrate is connected to the second and third semiconductor substrates by bumps.
14. The imaging device of claim 1 , further comprising:
a plurality of lenses, wherein the lenses of the plurality of lenses are formed on the light receiving surface side of the first semiconductor substrate and in an area of the plurality of arrays of pixels.