Memory device and method for fabricating the same

1. A method for fabricating a memory device, comprising:

forming a plurality of active layers arranged vertically with respect to a substrate;

forming a vertically oriented active body that penetrates through the active layers to interconnect the active layers to each other;

forming a vertically oriented bit line that is spaced apart from one side of the active body and penetrates through the active layers;

forming a vertically oriented capacitor that is spaced apart from another side of the active body and penetrates through the active layers; and

forming a plurality of word lines that are laterally oriented adjacent to one side of each of the active layers.

2. The method of claim 1 , wherein the forming of the plurality of the active layers arranged vertically with respect to the substrate includes:

forming an alternating stack in which dielectric materials and sacrificial materials are alternately stacked;

forming a vertically oriented cell opening that penetrates through the alternating stack;

forming recesses that extend laterally from the cell opening by selectively recessing the sacrificial materials through the cell opening; and

forming the active layers respectively filling the recesses.

3. The method of claim 1 , wherein each of the active layers includes a plurality of fingers.

4. The method of claim 1 , wherein the forming of the vertically oriented active body that penetrates through the active layers to interconnect the active layers to each other includes:

forming an alternating stack in which dielectric materials and sacrificial materials are alternately stacked;

replacing a portion of the sacrificial materials with the channel body; and

forming the vertically oriented active body that penetrates through the channel body.

5. The method of claim 4 , wherein the forming of the vertically oriented active body that penetrates through the active layers to interconnect the active layers to each other includes:

forming an alternating stack in which dielectric materials and sacrificial materials are alternately stacked;

forming a first cell opening that is vertically oriented by penetrating through the alternating stack;

forming recesses that extend laterally from the first cell opening by selectively recessing the sacrificial materials through the first cell opening;

filling the first cell opening from which the sacrificial materials are removed with a silicon material;

forming the active body doped with an impurity while filling the first cell opening over the silicon material and; and

diffusing the impurity from the active body to form the channel body.

6. The method of claim 1 , wherein the forming of the vertically oriented bit line that is spaced apart from one side of the active body and penetrates through the active layers includes:

forming an alternating stack in which dielectric materials and sacrificial materials are alternately stacked over the substrate;

replacing a portion of the sacrificial materials with bit line contact nodes; and

forming a conductive material that penetrates through the bit line contact nodes to form the vertically oriented bit line.

7. The method of claim 6 , wherein the forming of the vertically oriented bit line that is spaced apart from one side of the active body and penetrates through the active layers includes:

forming an alternating stack in which dielectric materials and sacrificial materials are alternately stacked over the substrate;

forming a second cell opening vertically oriented by penetrating through the alternating stack;

forming recesses that extend laterally from the cell opening by selectively recessing the sacrificial materials through the second cell opening;

filling the second cell opening from which the sacrificial materials are removed with the bit line contact nodes; and

forming the vertically oriented bit line filling the second cell opening over the bit line contact nodes.

8. The method of claim 1 , wherein the forming of the vertically oriented capacitor that is spaced apart from another side of the active body and penetrates through the active layers includes:

forming an alternating stack in which dielectric materials and sacrificial materials are alternately stacked over the substrate;

replacing a portion of the sacrificial materials with storage nodes; and

forming a dielectric layer and a plate node that are vertically oriented to penetrate through the storage nodes.

9. The method of claim 8 , wherein the forming of the vertically oriented capacitor that is spaced apart from another side of the active body and penetrates through the active layers includes:

forming an alternating stack in which dielectric materials and sacrificial materials are alternately stacked over the substrate;

forming a third cell opening that is vertically oriented by penetrating through the alternating stack;

forming recesses extending laterally from the third cell opening by selectively recessing the sacrificial materials through the third cell opening;

filling the third cell opening from which the sacrificial materials are removed with capacitor contact nodes; and

forming storage nodes surrounded by the capacitor contact nodes over the capacitor contact nodes; and

forming the dielectric layer and the plate node filling the third cell opening over the storage nodes.

10. The method of claim 1 , wherein in the forming of the plurality of the active layers arranged vertically with respect to the substrate,

each of the active layers includes a first cell opening, a second cell opening, and a third cell opening, and

the first cell opening, the second cell opening, and the third cell opening are vertically oriented with respect to each other.

11. The method of claim 10 , wherein the first cell opening is filled with the vertically oriented active body, and

the second cell opening is filled with the vertically oriented bit line, and

the third cell opening is filled with the vertically oriented capacitor.

12. The method of claim 1 , further comprising:

forming a first source/drain region in each of the active layers;

forming a second source/drain region laterally spaced apart from the first source/drain region in each of the active layers; and

forming a channel body laterally oriented between the first source/drain region and the second source/drain region.

13. The method of claim 12 , wherein the forming of the first source/drain region and the forming of the second source/drain region includes:

forming an opening that exposes one side of each of the active layers; and

doping an impurity on one side of each of the active layers through the opening.

14. The method of claim 12 , wherein the forming of the channel body laterally oriented between the first source/drain region and the second source/drain region includes:

forming an opening vertically oriented by penetrating through each of the active layers;

forming the impurity-doped active body that fills the opening; and

diffusing the impurity from the impurity-doped active body to form the channel body.

15. The method of claim 1 , wherein the forming of the plurality of the word lines that are laterally oriented adjacent to one side of each of the active layers includes:

forming an opening vertically oriented in parallel to one side of the active layer;

forming gate recesses that extend laterally from the opening; and

filling the gate recesses with a conductive material to form the word lines.