Power amplification circuit including protection circuit and electronic device including power amplification circuit
A power amplification circuit may comprise a power distributor configured to receive a radio frequency (RF) signal and output a first RF signal and a second RF signal, a first power amplifier configured to receive the first RF signal from the power distributor and amplify the first RF signal based on a first bias, a second power amplifier configured to receive the second RF signal from the power distributor and amplify the second RF signal based on a second bias, an impedance matching circuit configured to receive the first RF signal amplified by the first power amplifier and the second RF signal amplified by the second power amplifier, and a protection circuit configured to identify a current input to a bias terminal of the second power amplifier and, control a magnitude of the current input to the bias terminal based on the identified input current.
1. A power amplification circuitry, comprising:
a power distributor configured to receive a radio frequency (RF) signal and output a first RF signal and a second RF signal;
a first power amplifier connected to the power distributor and configured to receive the first RF signal from the power distributor and amplify the first RF signal based on a first bias;
a second power amplifier connected to the power distributor in parallel with the first amplifier and configured to receive the second RF signal from the power distributor and amplify the second RF signal based on a second bias;
an impedance matching circuitry configured to receive the first RF signal amplified by the first power amplifier and the second RF signal amplified by the second power amplifier; and
a protection circuitry configured to identify a current input to a bias terminal of the second power amplifier and control a magnitude of the current input to the bias terminal based on the current input to the bias terminal exceeding a first set value.
2. The power amplification circuitry of claim 1 , wherein the protection circuitry is further configured to change a setting for a maximum current of the current input to the bias terminal.
3. The power amplification circuitry of claim 1 , wherein the protection circuitry includes a low drop output (LDO) circuitry.
4. The power amplification circuitry of claim 1 , wherein the protection circuitry is further configured to output an alarm signal when the current input to the bias terminal exceeds the first set value.
5. The power amplification circuitry of claim 4 , further comprising an adaptive bias control circuitry configured to adaptively control the current input to the bias terminal of the second power amplifier based on a power level of the RF signal.
6. The power amplification circuitry of claim 5 , further comprising a controller, wherein the controller is configured to:
receive the alarm signal from the protection circuitry, and
adjust a gain for adjusting a bias current in the adaptive bias control circuitry based on the alarm signal.
7. The power amplification circuitry of claim 6 , wherein the controller is further configured to reduce the gain for adjusting the bias current in the adaptive bias control circuitry, by a second set value, when the alarm signal exceeds a preset number of times.
8. The power amplification circuitry of claim 6 , wherein the controller is further configured to adjust the gain for adjusting the bias current in the adaptive bias control circuitry based on a control signal received from a processor.
9. The power amplification circuitry of claim 6 , wherein the controller is further configured to provide a third set value for a maximum current of the current input to the bias terminal to the protection circuitry.
10. The power amplification circuitry of claim 1 , wherein the power distributor includes at least one of a divider or a splitter.
11. The power amplification circuitry of claim 1 , wherein a voltage of the first bias is set to be larger than a voltage of the second bias.
12. The power amplification circuitry of claim 1 , wherein the first bias of the first power amplifier is set to class A or class AB.
13. The power amplification circuitry of claim 1 , wherein the second bias of the second power amplifier is set to class C.
14. A power amplification circuitry, comprising:
a power distributor configured to receive a radio frequency (RF) signal and output a first RF signal and a second RF signal;
a first power amplifier connected to the power distributor and configured to receive the first RF signal from the power distributor and amplify the first RF signal based on a first bias;
a second power amplifier connected to the power distributor in parallel with the first amplifier and configured to receive the second RF signal from the power distributor and amplify the second RF signal based on a second bias;
an impedance matching circuitry configured to receive the first RF signal amplified by the first power amplifier and the second RF signal amplified by the second power amplifier;
a resistor connected to a bias terminal of the second power amplifier; and
a monitoring circuitry configured to determine whether the second power amplifier is damaged based on a current measured between both ends of the resistor.
15. The power amplification circuitry of claim 14 , wherein the monitoring circuitry is further configured to output identification information corresponding to the second power amplifier.
16. The power amplification circuitry of claim 15 , further comprising a controller, wherein the controller is configured to:
receive whether the second power amplifier is damaged and the identification information corresponding to the second power amplifier from the monitoring circuitry; and
when the second power amplifier is determined to be damaged, provide a control signal for controlling a current flowing to a bias terminal of the second power amplifier to the bias terminal of the second power amplifier.
17. An electronic device, comprising:
a communication processor;
an RF circuitry configured to modulate a baseband signal output from the communication processor into a radio frequency (RF) signal and output the RF signal;
a power distributor configured to receive the RF signal from the RF circuitry and output a first RF signal and a second RF signal;
a first power amplifier connected to the power distributor and configured to receive the first RF signal from the power distributor and amplify the first RF signal based on a first bias;
a second power amplifier connected to the power distributor in parallel with the first amplifier and configured to receive the second RF signal from the power distributor and amplify the second RF signal based on a second bias;
an impedance matching circuitry configured to receive the first RF signal amplified by the first power amplifier and the second RF signal amplified by the second power amplifier; and
a protection circuitry configured to identify a current input to a bias terminal of the second power amplifier and control a magnitude of the current input to the bias terminal based on the current input to the bias terminal exceeding a first set value.
18. The electronic device of claim 17 , wherein the protection circuitry is further configured to change a setting for a maximum current of the current input to the bias terminal.
19. The electronic device of claim 17 , wherein the protection circuitry includes a low drop output (LDO) circuitry.
20. The electronic device of claim 17 , wherein the protection circuitry is further configured to output an alarm signal when the current input to the bias terminal exceeds the first set value.