Epitaxy structure including a plurality of semiconductor devices
Provided is an epitaxy structure including a substrate having an upper surface, the upper surface having a single crystal structure, a two-dimensional material layer disposed on the upper surface of the substrate, and a plurality of nanorod light emitting devices disposed on an upper surface of the two-dimensional material layer, each of the plurality of nanorod light emitting devices having a nanorod shape extending in a vertical direction, wherein each of the plurality of nanorod light emitting devices includes a light emitting nanorod, and a passivation film disposed adjacent to a sidewall of the light emitting nanorod, the passivation film having insulation.
1 . An epitaxy structure comprising:
a substrate comprising:
a single support layer; and
a plurality of single crystal layers on the single support layer and spaced apart from each other, the plurality of single crystal layers having a single crystal structure comprising at least one single crystal of lithium fluoride (LiF) and barium titanate (BaTiO 3 );
a plurality of two-dimensional material layers respectively disposed on the plurality of single crystal layers; and
a plurality of nanorod light emitting devices, each of the plurality of nanorod light emitting devices being disposed on an upper surface of a corresponding two-dimensional material layer of the plurality of two-dimensional material layers, each of the plurality of nanorod light emitting devices having a nanorod shape extending in a vertical direction,
wherein each of the plurality of nanorod light emitting devices comprises:
a light emitting nanorod; and
a passivation film disposed adjacent to a sidewall of the light emitting nanorod, the passivation film having insulation, and
wherein the sidewall of the light emitting nanorod and a sidewall of each two-dimensional material layer of the plurality of two-dimensional material layers are coplanar.
2 . The epitaxy structure of claim 1 , wherein the single support layer comprises a crystalline material, and
wherein the single crystal layer comprises a single crystal of a group III-V compound semiconductor having an ionic bond characteristic or an ionic crystal.
3 . The epitaxy structure of claim 2 , wherein the single support layer comprises silicon (Si) or sapphire.
4 . The epitaxy structure of claim 2 , wherein the single crystal layer further comprises at least one single crystal of gallium nitride (GaN).
5 . The epitaxy structure of claim 1 , wherein the single support layer comprises an amorphous material.
6 . The epitaxy structure of claim 5 , wherein the single crystal layer further comprises at least one of cerium oxide (CeO 2 ), scandium(III) oxide (Sc 2 O 3 ), magnesium oxide (MgO), barium oxide (BaO), and bromine nitride (BrN) oriented in a (111) direction, a (001) direction, or a (100) direction.
7 . The epitaxy structure of claim 6 , wherein the single crystal layer comprises at least two sub-layers, each of the at least two sub-layers having a thickness of 0.5 nm to 100 nm.
8 . The epitaxy structure of claim 5 , wherein the single support layer comprises glass or fused silica.
9 . The epitaxy structure of claim 1 , wherein the plurality of two-dimensional material layers comprise a plurality of nanorods respectively extending from a corresponding light emitting nanorod.
10 . The epitaxy structure of claim 1 , wherein the single crystal layer comprises a plurality of nanorods respectively extending from a corresponding light emitting nanorod.
11 . The epitaxy structure of claim 1 , wherein the substrate comprises one single layer having a single crystal structure.
12 . The epitaxy structure of claim 11 , wherein the substrate comprises at least one single crystal from among 4H—SiC, 6H—SiC, and 3C—SiC.
13 . The epitaxy structure of claim 11 , wherein the plurality of two-dimensional material layers comprise a plurality of nanorods respectively extending from a corresponding light emitting nanorod.
14 . The epitaxy structure of claim 1 , wherein the plurality of two-dimensional material layers comprises at least one of graphene, boron nitride, and a transition metal dichalcogenide.
15 . The epitaxy structure of claim 1 , wherein the light emitting nanorod comprises:
a first semiconductor layer disposed on the upper surface of each two-dimensional material layer of the plurality of two-dimensional material layers, the first semiconductor layer being doped with a first conductivity type;
a light emitting layer disposed on the first semiconductor layer;
a second semiconductor layer disposed on the light emitting layer, the second semiconductor layer being doped with a second conductivity type that is electrically opposite to the first conductivity type; and
an electrode disposed on the second semiconductor layer.
16 . The epitaxy structure of claim 15 , wherein the light emitting nanorod has a height in a range of 1 μm to 20 μm, and a diameter in a range of 0.05 μm to 1 μm.
17 . The epitaxy structure of claim 15 , wherein the passivation film comprises an insulating crystalline material, a crystalline structure of the insulating crystalline material being same as a crystalline structure of a crystalline material of the light emitting layer.
18 . The epitaxy structure of claim 17 , wherein the passivation film has a lattice matching epitaxial relationship or a domain matching epitaxial relationship with the light emitting layer.
19 . An epitaxy structure comprising:
a substrate comprising:
a single support layer; and
a plurality of single crystal layers on the single support layer and spaced apart from each other, the plurality of single crystal layers having a single crystal structure comprising at least one single crystal of lithium fluoride (LiF) and barium titanate (BaTiO 3 );
an insulating layer disposed on an upper surface of the substrate;
a plurality of two-dimensional material layers respectively disposed on the plurality of single crystal layers, the plurality of two-dimensional material layers being electrically isolated from each other by the insulating layer; and
a plurality of semiconductor devices respectively disposed to correspond to the plurality of two-dimensional material layers,
wherein a sidewall of each of the plurality of two-dimensional material layers and a sidewall of each of the corresponding plurality of semiconductor devices are coplanar.
20 . The epitaxy structure of claim 19 , wherein the plurality of semiconductor devices comprise different semiconductor materials.
21 . The epitaxy structure of claim 19 , wherein the plurality of semiconductor devices comprise any one of a light source, a photodetector, an optical modulator, and an optical amplifier.
22 . A monolithic optical integrated circuit comprising
an epitaxy structure comprising:
a substrate comprising:
a single support layer; and
a plurality of single crystal layers on the single support layer and spaced apart from each other, the plurality of single crystal layers having a single crystal structure comprising at least one single crystal of lithium fluoride (LiF) and barium titanate (BaTiO 3 );
an insulating layer disposed on an upper surface of the substrate;
a plurality of two-dimensional material layers respectively disposed on the plurality of single crystal layers, the plurality of two-dimensional material layers being electrically isolated from each other by the insulating layer; and
a plurality of semiconductor devices respectively disposed on the plurality of two-dimensional material layers,
wherein the plurality of semiconductor devices comprise one of a light source, a photodetector, an optical modulator, and an optical amplifier, and
wherein a sidewall of each of the plurality of two-dimensional material layers and a sidewall of each of the corresponding plurality of semiconductor devices are coplanar.