Composition for forming underlayer film, resist pattern forming method, and manufacturing method of electronic device
A composition for forming an underlayer film is used for forming an underlayer film under a resist film, the composition including a silicon atom-containing compound and a halogen-based solvent, in which a content of the halogen-based solvent is 1.0 ppb by mass to 50.0 ppm by mass with respect to a total mass of the composition for forming an underlayer film.
1. A A composition for forming an underlayer film, the composition comprising:
a silicon atom-containing compound; and
a halogen-based solvent,
a non-halogen-based solvent,
wherein a content of the halogen-based solvent is 1.0 ppb by mass to 50.0 ppm by mass with respect to a total mass of the composition for forming an underlayer film, and
a concentration of solid contents in the composition for forming an underlayer film is 0.1% to 20% by mass.
2. The composition for forming an underlayer film according to claim 1 ,
wherein the content of the halogen-based solvent is 1.0 ppm by mass to 10.0 ppm by mass with respect to the total mass of the composition for forming an underlayer film.
3. The composition for forming an underlayer film according to claim 1 ,
wherein the content of the halogen-based solvent is 20 ppb by mass to 750 ppm by mass with respect to a total mass of the silicon atom-containing compound.
4. The composition for forming an underlayer film according to claim 1 ,
wherein the content of the halogen-based solvent is 500 ppb by mass to 100 ppm by mass with respect to a total mass of the silicon atom-containing compound.
5. The composition for forming an underlayer film according to claim 1 ,
wherein the silicon atom-containing compound is a siloxane compound.
6. The composition for forming an underlayer film according to claim 1 ,
wherein the silicon atom-containing compound is a hydrolysis condensate of one or more compounds selected from the group consisting of tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetra-iso-propoxysilane, tetraphenoxysilane, and a compound represented by General Formula (A),
R 1 n Si(OR 2 ) 4-n (A)
in General Formula (A), R 1 and R 2 each independently represent a monovalent organic group, and n represents an integer of 1 to 3.
7. The composition for forming an underlayer film according to claim 1 , further comprising:
one or more compounds selected from the group consisting of an acid generator, a basic compound, and an acidic compound.
8. The composition for forming an underlayer film according to claim 7 ,
wherein the composition for forming an underlayer film includes the acid generator.
9. The composition for forming an underlayer film according to claim 7 ,
wherein the acid generator is a compound represented by any one of General Formula (1), (2), or (3),
in General Formulae (1) to (3), R 11 to R 14 , R 21 to R 23 , R 31 , and R 32 each independently represent an alkyl group or an aryl group, and Rf represents an organic group having one or more fluorine atoms;
in General Formula (2), two of R 21 to R 23 may be bonded to each other to form a ring.
10. The composition for forming an underlayer film according to claim 1 ,
wherein the halogen-based solvent includes one or more kinds selected from the group consisting of methylene chloride and chloroform.
11. A resist pattern forming method comprising:
forming an underlayer film on a substrate by using the composition for forming an underlayer film according to claim 1 ;
forming a resist film on the underlayer film by using a resist composition;
exposing the resist film; and
developing the exposed resist film with a developer to form a resist pattern.
12. A resist pattern forming method comprising:
forming a second underlayer film on a substrate by using a composition for forming a second underlayer film, which includes an aromatic ring-containing compound;
forming an underlayer film on the second underlayer film by using the composition for forming an underlayer film according to claim 1 ;
forming a resist film on the underlayer film by using a resist composition;
exposing the resist film; and
developing the exposed resist film with a developer to form a resist pattern.
13. The resist pattern forming method according to claim 11 ,
wherein the exposure is a liquid immersion exposure.
14. The resist pattern forming method according to claim 11 ,
wherein the developer is a developer including an organic solvent.
15. The resist pattern forming method according to claim 11 ,
wherein the developer is an alkali developer.