Semiconductor device and fabrication method of semiconductor device
A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.
1. A semiconductor device comprising:
a first insulator;
a first conductor in an opening in the first insulator;
a first oxide over the first insulator;
a second conductor over the first oxide;
a second insulator over the second conductor;
a third conductor over the second conductor; and
a fourth conductor over the first oxide,
wherein the fourth conductor is provided in an opening in the second insulator, and
wherein the second conductor is in contact with a top surface of the first conductor and a bottom surface of the third conductor.
2. The semiconductor device according to claim 1 , further comprising a fifth conductor below the first oxide.
3. The semiconductor device according to claim 1 , further comprising a third insulator over the second conductor,
wherein the third insulator is in contact with the top surface of the second conductor and a side surface of the third conductor.
4. The semiconductor device according to claim 3 ,
wherein the second insulator is in contact with a side surface of the second conductor and a side surface of the third insulator.
5. A semiconductor device comprising:
a first insulator;
a first conductor in an opening in the first insulator;
a first oxide over the first insulator;
a second conductor over the first oxide;
a second insulator over the second conductor;
a third conductor over the second conductor; and
a fourth conductor over the first oxide,
wherein the fourth conductor is provided in an opening in the second insulator,
wherein the second conductor is in contact with a top surface of the first conductor and a bottom surface of the third conductor, and
wherein the fourth conductor does not overlap with the second conductor.
6. The semiconductor device according to claim 5 , further comprising a fifth conductor below the first oxide.
7. The semiconductor device according to claim 5 , further comprising a third insulator over the second conductor,
wherein the third insulator is in contact with the top surface of the second conductor and a side surface of the third conductor.
8. The semiconductor device according to claim 7 ,
wherein the second insulator is in contact with a side surface of the second conductor and a side surface of the third insulator.