IP Library Granted Patent US 11,939,267
Granted Patent B2
US 11,939,267 · App. 17/734,416 · Granted Mar 26, 2024

Method and apparatus for producing AlN whiskers, AlN whisker bodies, AlN whiskers, resin molded body, and method for producing resin molded body

Inventors: Toru Ujihara (Nagoya, JP); Yukihisa Takeuchi (Nagoya, JP); Daishi Shiojiri (Nagoya, JP); Masaki Matsumoto (Nagoya, JP); Hiroshi Saito (Nagoya, JP); Ikuo Hayashi (Nagoya, JP)
Assignee: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
C04B35/581C30B29/38C30B29/62
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Quick Facts
Patent No.
US 11,939,267
App. No.
17/734,416
Granted
Mar 26, 2024
Kind
B2
Abstract

A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al 2 O 3 substrate placed in the reaction chamber.

Claims (38)

1. An AlN whisker body comprising a carbon substrate, an AlN polycrystal or AlN particle formed on the surface of the carbon substrate, and an AlN whisker bonded to the surface of the AlN polycrystal or the AlN particle.

2. An AlN whisker comprising

a fibrous AlN single crystal,

an oxygen atom-containing layer covering the AlN single crystal, and

a hydrophobic layer covering the oxygen atom-containing layer, wherein

the oxygen atom-containing layer is formed through incorporation of at least oxygen atoms into the AlN single crystal, and

the hydrophobic layer comprises a hydrocarbon group.

3. An AlN whisker according to claim 2 , wherein

the oxygen atom-containing layer is bonded to the hydrophobic layer by means of an ester bond.

4. An AlN whisker according to claim 2 , wherein

the oxygen atom-containing layer comprises at least one of Al 2 O 3 , AlON, and Al(OH) 3 .

5. An AlN whisker according to claim 2 , wherein

the oxygen atom-containing layer has a thickness of 7 nm to 500 nm.

6. A resin molded body comprising an AlN whisker having a first end and a second end, and a resin material covering the AlN whisker; wherein

the resin molded body comprises a first surface and a second surface opposite the first surface;

the first end of the AlN whisker is exposed at the first surface, and

the second end of the AlN whisker is exposed at the second surface,

wherein

the AlN whisker comprises a fibrous AlN single crystal, an oxygen atom-containing layer covering the AlN single crystal, and a hydrophobic layer covering the oxygen atom-containing layer;

the oxygen atom-containing layer is formed through incorporation of at least oxygen atoms by the AlN single crystal; and

the hydrophobic layer comprises a hydrocarbon group.

7. A resin molded body, comprising

an insulating particle,

a plurality of AlN whiskers covering the insulating particle, and

a resin covering the AlN whiskers, wherein

the AlN whisker comprises a fibrous AlN single crystal, an oxygen atom-containing layer covering the AlN single crystal, and a hydrophobic layer covering the oxygen atom-containing layer;

the oxygen atom-containing layer is formed through incorporation of at least oxygen atoms into the AlN single crystal; and

the hydrophobic layer comprises a hydrocarbon group.

8. A sintered body comprising:

an AlN whisker comprising a fibrous AlN single crystal and an oxygen atom-containing layer covering the AlN single crystal, and

one or more species of insulating particles covering the AlN whisker, wherein

the oxygen atom-containing layer is formed through incorporation of at least oxygen atoms into the AlN single crystal.

9. A sintered body according to claim 8 , wherein

the oxygen atom-containing layer has a thickness of 7 nm to 500 nm.

10. A sintered body according to claim 8 , wherein

the oxygen atom-containing layer comprises at least one of Al 2 O 3 , AlON, and Al(OH) 3 .

11. A sintered body according to claim 8 , wherein

the one or more species of insulating particles comprise AlN polycrystalline particles.

Assignments (1)
CHANGE OF NAME Recorded May 23, 2024
From: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
To: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM
Reel/Frame 067527/0190 →
Priority Claims (3)
JP 2017-053622 · Mar 17, 2017 · national
JP 2017-053623 · Mar 17, 2017 · national
JP 2017-053624 · Mar 17, 2017 · national
Continuity (2)
Division 16494928
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